Sharp Kabushiki Kaisha Corporation

Takuto Yasumatsu

Tomohiro Kimura

Noriko Watanabe

A display device () includes a display panel () which has a display region (D) for image display and a non-display region (N) surrounding the display region (D), and has flexibility, wherein a reinforcing member () is bonded to in the non-display region (N) of the display panel () such that the display region (D) is exposed.

Display device

Provided is a display panel that has a touch sensor function, that is thin, and that has high flexibility. A plurality of sub-pixel electrodes () arranged in matrix and a counter electrode () are opposed to each other, and a pair of flexible substrates () are opposed to each other, with the sub-pixel electrodes () and the counter electrode () being interposed therebetween. A desired display is carried out by controlling respective potentials of the plurality of sub-pixel electrodes with respect to the counter electrode. A pressure-sensitive conductive resin () whose electric resistance varies with a compressive force applied thereto is provided between the pair of flexible substrates. A change in a distance between the pair of flexible substrates that occurs according to a pressure applied to one of the pair of flexible substrates is detected based on a value of an electric current flowing through the pressure-sensitive conductive resin.

Flexible display panel with touch sensor function

A production method for a flexible semiconductor substrate according to the present invention includes: a step of providing an inorganic substrate; a step of forming a polyimide layeron the inorganic substrate by using a material in solution form, the polyimide layerhaving a thickness of less than 10 &#x3bc;m; a step of forming a semiconductor device on the polyimide layer; a step of, after forming the semiconductor device, removing the polyimide layer from the inorganic substrate; and a step of forming a polyparaxylene resin layerhaving a thickness which is equal to or greater than the thickness of the polyimide layer. The polyparaxylene resin layer may be formed on the semiconductor device before the removing step, or formed on the opposite side of the polyimide layer from the semiconductor device after the removing step. The production method according to the present invention excels in mass producibility.

Method for manufacturing flexible semiconductor substrate

An island of a crystalline semiconductor according to the present invention has an upper surface and a sloped side surface, which are joined together with a curved surface. Crystal grains in a body portion of the island, including the upper surface, and crystal grains in an edge portion of the island, including the sloped side surface, both have average grain sizes that are greater than 0.2 &#x3bc;m.

Crystalline semiconductor film and method for manufacturing the same

To provide a method for producing a high-performance semiconductor device by a simple and low-temperature process. The method for producing a semiconductor device, in accordance with the present invention, is a production method of a semiconductor device including a first insulating film, a semiconductor layer, and a second insulating film in this order on a substrate, the method including the steps of: forming a first insulating film including a hydrogen barrier layer; forming a semiconductor layer on a region where the hydrogen barrier layer of the first insulating film is formed; injecting hydrogen into the semiconductor layer; forming a second insulating film, the second insulating film including a hydrogen barrier layer on at least a region where the semiconductor layer is formed; and subjecting the semiconductor layer to hydrogenation annealing.

Production method of semiconductor device and semiconductor device

To provide a semiconductor device and a display device which include a circuit element capable of improving performances and a circuit element capable of increasing a withstand voltage on the same substrate and which can improve the reliability. The semiconductor device of the present invention includes a first circuit element and a second circuit element on a substrate, the first circuit element having a structure in which a first semiconductor layer, a first insulating film, a first conductive layer, and a third insulating film are stacked in this order, the second circuit element having a structure in which a second semiconductor layer, a second insulating film having a thickness larger than a thickness of the first insulating film, and a second conductive layer are stacked in this order, wherein the first insulating film has a multilayer structure including a silicon nitride layer as the uppermost layer, the second insulating film has a lower part and an upper part, the lower part includes the multilayer structure of the first insulating film, and the upper part includes a structure of the third insulating film formed on the first conductive layer.

Growing community of inventors

Osaka, Japan

Takuto Yasumatsu