Flosfia Inc.

Takuto Igawa

Shingo Yagyu

Toshimi Hitora

Takashi Shinohe

Tokiyoshi Matsuda

In a first aspect of a present inventive subject matter, a multilayer structure includes a base with a surface and an electrically-conductive metal oxide film that is positioned directly or via another layer on the base. At least a part of the surface of the base contains as a major component at least one selected from the group of copper, copper alloy, aluminum, aluminum alloy, magnesium, magnesium alloy, and stainless steel. The electrically-conductive metal oxide film is 30 nm or more in thickness. The multilayer structure is electrically-conductive and has a contact resistance that is 100 m&#x3a9;cmor less.

Multilayer structure and method of forming the same

In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer containing as a major component an &#x3b5;-phase oxide semiconductor crystal; and a second semiconductor layer positioned on the first semiconductor layer and containing as a major component an oxide semiconductor crystal with a tetragonal crystal structure.

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Kyoto, Japan

Takuto Igawa