Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Takushi Shigetoshi

Shinpei Fukuoka

Junpei Yamamoto

Hideaki Togashi

Sho Nishida

Moe Takeo

Takanori Tada

A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G, and g) of transistors (AMP, RST, TG, and TG) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.

Solid-state imaging element, electronic device, and manufacturing method of solid-state imaging element

Provided is an imaging element that includes a semiconductor substrate, a first photoelectric converter, a through electrode, a first dielectric film, and a second dielectric film. The semiconductor substrate has one surface and another surface that are opposed to each other. The semiconductor substrate has a through hole penetrating between the one surface and the other surface. The first photoelectric converter is provided above the one surface of the semiconductor substrate. The through electrode is electrically coupled to the first photoelectric converter and penetrates the semiconductor substrate inside the through hole. The first dielectric film is provided on the one surface of the semiconductor substrate and has a first film thickness. The second dielectric film is provided on a side surface of the through hole and has a second film thickness. The second film thickness is less than the first film thickness.

Imaging element and imaging device

A solid-state image sensor is provided that includes a semiconductor substrate, a charge accumulator disposed in the semiconductor substrate and configured to accumulate charge, a photoelectric converter provided above the semiconductor substrate and configured to convert light to charge, and a through electrode passing through the semiconductor substrate and electrically connecting the charge accumulator with the photoelectric converter. At an end portion on the photoelectric converter side of the through electrode, a cross-sectional area of a conductor positioned at the center of the through electrode in a cut section orthogonal to a through direction of the through electrode gradually increases toward the photoelectric converter along the through direction.

Solid-state image sensor, solid-state imaging device, and method of manufacturing solid-state image sensor

Provided is a semiconductor device that includes a cylindrical insulating film, a front surface side pad, a conductor layer, and a back surface side pad. The cylindrical insulating film is configured in a cylindrical shape penetrating a semiconductor substrate. The front surface side pad is formed adjacent to a front surface of the semiconductor substrate inside the cylindrical insulating film. The conductor layer is arranged adjacent to the front surface side pad and an inner side of the cylindrical insulating film after removing the semiconductor substrate inside the cylindrical insulating film adjacent to the front surface side pad. The back surface side pad is arranged on a back surface of the semiconductor substrate and is connected to the front surface side pad via the conductor layer.

Semiconductor device and manufacturing method of semiconductor device including a through electrode for connection of wirings

Damage to a semiconductor device at the time of forming a via hole in which a through electrode is arranged is prevented. The semiconductor device includes a cylindrical insulating film, a front surface side pad, a conductor layer, and a back surface side pad. The cylindrical insulating film is configured in a cylindrical shape penetrating a semiconductor substrate. The front surface side pad is formed adjacent to a front surface of the semiconductor substrate inside the cylindrical insulating film. The conductor layer is arranged adjacent to the front surface side pad and an inner side of the cylindrical insulating film after removing the semiconductor substrate inside the cylindrical insulating film adjacent to the front surface side pad. The back surface side pad is arranged on a back surface of the semiconductor substrate and is connected to the front surface side pad via the conductor layer.

To suppress variation in transistor characteristics due to charging damage to relieve restrictions on design necessary for avoiding the charging damage and improve the degree of freedom in design for increasing semiconductor integration. A semiconductor device includes a vertical electrode formed in a vertical hole extending from an opening portion toward a portion to be connected in a thickness direction of a base, and having a structure in which a barrier metal film and a conductive material are stacked sequentially from a side close to an insulating film exposed to the vertical hole, and a low-resistance film provided to lie between the barrier metal film and the insulating film except a vicinity of the portion to be connected, and having a lower resistance value than a resistance value of the insulating film.

Vertical electrode structure comprising low-resistance film for preventing damage during etching

There is provided an imaging device with a semiconductor substrate having a first side and a second side opposite the first side. A photoelectric conversion unit is on the first side of the semiconductor substrate. A multilayer wiring layer is on the second side of the semiconductor substrate. A through electrode extends between the photoelectric conversion unit and the multilayer wiring layer. The multilayer wiring layer includes a local wiring layer. A second end of the through electrode is in direct contact with the local wiring layer.

Solid-state imaging device and method for producing the same, and electronic device

The present invention aims to improve the accuracy and stability when removing an insulating film at a bottom of a TSV to allow a through hole to open toward a connection target electrode. A semiconductor device manufacturing method including: forming a through hole in a semiconductor substrate by using anisotropic etching performed from a first surface side of the semiconductor substrate; forming a thin film being an insulating film on an entire inner surface of the through hole; forming a carbon-containing thin film using plasma deposition on the first surface including an opening edge portion of the through hole; engraving an inner bottom of the through hole by using anisotropic plasma etching with the carbon-containing thin film as a mask; removing the carbon-containing thin film by ashing; and forming a through-substrate electrode in the through hole.

Semiconductor device and semiconductor device manufacturing method

A semiconductor device includes a wiring layer that includes at least one low-dielectric rate interlayer insulating film layer; a guard ring that is formed by placing in series a wire and a via so as to be in contact with a through electrode, in a portion in which the through electrode passing through the wiring layer is formed; and the through electrode that is formed by being buried inside the guard ring.

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Nagasaki, Japan

Takushi Shigetoshi