Sony Semiconductor Solutions Corporation

Sony Corporation

Takuro Murase

Tsutomu Imoto

Takuya Maruyama

Ryota Watanabe

Yuji Isogai

Toshifumi Wakano

Yusuke Otake

Yuji Suzuki

Hideki Arai

Takeshi Yamazaki

Hirotoshi Nomura

Taisuke Suwa

Ikumi Takeda

A solid-state imaging device capable of weakening incident light that passes through an effective pixel region and enters an optical black pixel region. Among a plurality of straight groove portions constituting a trench portion, a first straight groove portion is formed at a boundary between an effective pixel region and an optical black pixel region (OPB pixel region), a plurality of second straight groove portions are formed in the OPB pixel region and parallel to the boundary in a plan view, and a third straight groove portion is formed between photoelectric conversion units in the effective pixel region, a specific straight groove portion, the specific straight groove portion being the first groove portion and/or being one or more of the plurality of second straight groove portions, has a different shape from the third straight groove portion, and a light shielding material is embedded in the specific straight groove portion.

Solid-state imaging device and electronic device

The present technique relates to an imaging element and a distance measurement module capable of reducing parasitic capacity. A distance measurement module includes: a first wiring that connects predetermined transistors in first adjacent pixels to a via formed in one of first adjacent pixels and connected to a wiring formed in another layer; and a second wiring that connects predetermined transistors in second adjacent pixels to a via formed in a pixel that is adjacent to one of second adjacent pixels and connected to a wiring formed in another layer, in which the first wiring is connected to a redundant wiring. The present technique can be applied to a distance measurement sensor that performs distance measurement, for example.

Imaging element and distance measurement module

The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the wiring layer includes at least one ground line having a wider line width than a power supply line. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.

Light-receiving element and distance-measuring module

The present technology relates to an image sensor, an imaging device, and a ranging device capable of performing imaging so that noise is reduced. A photoelectric conversion unit configured to perform photoelectric conversion; a charge accumulation unit configured to accumulate charges obtained by the photoelectric conversion unit; a transfer unit configured to transfer the charges from the photoelectric conversion unit to the charge accumulation unit; a reset unit configured to reset the charge accumulation unit; a reset voltage control unit configured to control a voltage to be applied to the reset unit; and an additional control unit configured to control addition of capacitance to the charge accumulation unit are included. The charge accumulation unit includes a plurality of regions. The present technology can be applied to, for example, an imaging device that captures an image and a ranging device that performs ranging.

Image sensor, imaging device, and ranging device

The present disclosure relates to a solid-state imaging element and an electronic device capable of increasing the capacitance of a charge holding unit. The solid-state imaging element includes a pixel including a photodiode, an FD that accumulates charges generated in the photodiode, and a charge holding unit that is connected in parallel with the FD. The charge holding unit includes a wiring capacitance formed by parallel running of a first wiring connected to a first potential and a second wiring connected to a second potential different from the first potential. The present disclosure can be applied to a solid-state imaging element that performs global shutter type imaging.

Solid-state imaging element and electronic device

The present technology relates to a light-receiving element and a distance measurement module. A light-receiving element includes: a first voltage application unit to which a voltage is applied; a first charge detection unit that is disposed at a periphery of the first voltage application unit; a second voltage application unit to which a voltage is applied; a second charge detection unit that is disposed at a periphery of the second voltage application unit; a third voltage application unit to which a first voltage is applied; and a voltage control unit that applies a second voltage to one of the first voltage application unit and the second a voltage application unit and causes the other to be in a floating state, the second voltage being different from the first voltage. The present technology is applicable to a light-receiving element.

Light-receiving element and distance measurement module using indirect time of flight

The present technology relates to a light reception device and a distance measurement module whose characteristic can be improved. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion and a second charge detection portion arranged around the second voltage application portion. Furthermore, the light reception device is configured such that a phase difference is detected using signals detected by the first tap and the second tap. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

Light reception device and distance measurement module

Provided is a measurement device that includes a pixel including a light receiver, a plurality of storage sections, and an electric charge supplying section. The light receiver generates received-light electric charge by performing photoelectric conversion on the basis of light. The plurality of storage sections stores the received-light electric charge and the plurality of storage sections includes a first storage section and a second storage section. The electric charge supplying section selectively supplies the received-light electric charge generated by the light receiver to the plurality of storage sections. The measurement device includes a processor that generates a first detection value on the basis of an electric charge amount of the received-light electric charge stored in the first storage section, and generates a second detection value on the basis of an electric charge amount of the received-light electric charge stored in the second storage section. The processor generates a first pixel value on the basis of a difference between the first detection value and the second detection value.

Measurement device

The present technology relates to a light reception device and a distance measurement module. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap to which a first voltage is applied and a first charge detection portion, and a second tap to which a second voltage different from the first voltage is applied and a second charge detection portion. The position of the on-chip lens differs depending upon an in-plane position of a pixel array section, so that an optical path length or a DC contrast of a chief ray from an object is uniform at in-plane pixels of the pixel array section. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

A light-receiving element includes an on-chip lens; an interconnection layer; and a semiconductor layer that is disposed between the on-chip lens and the interconnection layer. The semiconductor layer includes a first voltage application unit to which a first voltage is applied, a second voltage application unit to which a second voltage different from the first voltage is applied, a first charge detection unit that is disposed at the periphery of the first voltage application unit, a second charge detection unit that is disposed at the periphery of the second voltage application unit, and a charge discharge region that is provided on an outer side of an effective pixel region. For example, the present technology is applicable to a light-receiving element that generates distance information in a ToF method, or the like.

Light-receiving element and distance measurement module

The present technology relates to a solid-state imaging element, an imaging device, and an electronic apparatus which enable enhancement of focusing accuracy and sensitivity and suppression of color mixing, in a high image height portion. Incident light is condensed by a main lens, and the condensed light is condensed by a plurality of on-chip lenses. The on-chip lenses are each shared by a plurality of photodiodes that receive the light condensed by the on-chip lens and that generate and accumulate electric charges corresponding to the amounts of light. The plurality of photodiodes sharing the on-chip lens are shaped, in accordance with the image height of the on-chip lens, in such a manner as to have substantially uniform light reception characteristics. The present technology is applicable to a CMOS image sensor.

Growing community of inventors

Kanagawa, Japan

Takuro Murase