Sandisk Technologies Inc.

Takuro Maede

Seje Takaki

Kengo Kajiwara

Ryousuke Itou

Manabu Hayashi

Tetsuya Yamada

Akira Nakada

Takeshi Kawamura

Shingo Ohsaki

Yusuke Oda

Hiroshi Kariya

A method is provided that includes forming a transistor by forming a gate disposed in a first direction above a substrate, the gate including a first bridge portion and a second bridge portion, forming the first bridge portion extending in the first direction and disposed near a top of the gate, and forming the second bridge portion extending in the first direction and disposed near a bottom of the gate.

Vertical thin film transistors with surround gates

Unwanted erosion of dielectric materials around a backside contact trench can be avoided or minimized employing an aluminum oxide liner. An aluminum oxide liner can be formed inside an insulating material layer in a backside contact trench to prevent collateral etching of the insulating material at an upper portion of the backside contact trench during an anisotropic etch that forms an insulating spacer. Alternatively, an aluminum oxide layer can be employed as a backside blocking dielectric layer. An upper portion of the aluminum oxide layer can be converted into an aluminum compound layer including aluminum and a non-metallic element other than oxygen at an upper portion of the trench, and can be employed as a protective layer during formation of a backside contact structure.

Three-dimensional memory device with aluminum-containing etch stop layer for backside contact structure and method of making thereof

A method is provided that includes forming a transistor by forming a first a rail gate disposed in a first direction above a substrate, forming a second rail gate disposed in a second direction above the substrate, the second direction perpendicular to the first direction, and forming a bridge section disposed between the first rail gate and the second rail gate.

Growing community of inventors

Yokkaichi, Japan

Takuro Maede