Semiconductor Energy Laboratory Co., Ltd.

Takuro Kanemura

Yoshiyuki Kurokawa

Munehiro Kozuma

Takeshi Aoki

Hiromichi Godo

Satoru Okamoto

Tatsunori Inoue

Yusuke Negoro

Atsuya Tokinosu

Taisuke Higashi

Hiroya Hibino

A semiconductor device capable of performing product-sum operation with high layout flexibility is provided. In the semiconductor device, a first layer, a second layer, and a third layer are formed in this order. The first layer includes a first cell, a first circuit, a first wiring, and a second wiring adjacent to the first wiring. The second layer includes a third wiring and a fourth wiring adjacent to the third wiring. The third layer includes an electrode and a sensor. The first circuit includes a switch. The sensor is electrically connected to the third wiring through the electrode and a first plug, a first terminal of the switch is electrically connected to the third wiring through a second plug, and a second terminal of the switch is electrically connected to the first cell through the first wiring. The electrode includes a region overlapping with the sensor and a region overlapping with the first plug. Note that the first to fourth wirings are parallel to each other, and the distance between the third wiring and the fourth wiring is greater than or equal to 0.9 times and less than or equal to 1.1 times the distance between the first wiring and the second wiring.

Semiconductor device and electronic device

A semiconductor device with a small circuit area and low power consumption is provided. The semiconductor device includes first to fourth cells, a current mirror circuit, and first to fourth wirings, and the first to fourth cells each include a first transistor, a second transistor, and a capacitor. In each of the first to fourth cells, a first terminal of the first transistor is electrically connected to a first terminal of the capacitor and a gate of the second transistor. The first wiring is electrically connected to first terminals of the second transistors in the first cell and the second cell, the second wiring is electrically connected to first terminals of the second transistors in the third cell and the fourth cell, the third wiring is electrically connected to second terminals of the capacitors in the first cell and the third cell, and the fourth wiring is electrically connected to second terminals of the capacitors in the second cell and the fourth cell. The current mirror circuit is electrically connected to the first wiring and the second wiring.

A semiconductor device that has low power consumption and is capable of performing a product-sum operation is provided. The semiconductor device includes first and second cells, a first circuit, and first to third wirings. Each of the first and second cells includes a capacitor, and a first terminal of each of the capacitors is electrically connected to the third wiring. Each of the first and second cells has a function of feeding a current based on a potential held at a second terminal of the capacitor, to a corresponding one of the first and second wirings. The first circuit is electrically connected to the first and second wirings and stores currents I1 and I2 flowing through the first and second wirings. When the potential of the third wiring changes and accordingly the amount of current of the first wiring changes from I1 to I3 and the amount of current of the second wiring changes from I2 to I4, the first circuit generates a current with an amount I1−I2−I3+I4. Note that the potential of the third wiring is changed by firstly inputting a reference potential to the third wiring and then inputting a potential based on internal data or a potential based on information obtained by a sensor.

An imaging device having a color imaging function and an infrared imaging function is provided. The imaging device has a structure in which a first photoelectric conversion device and a second photoelectric conversion device are stacked, and the second photoelectric conversion device generates electric charge by absorbing infrared light and transmits light having a wavelength of a higher energy than that of infrared light. The first photoelectric conversion device is positioned to overlap with the second photoelectric conversion device, and generates electric charge by absorbing light (visible light) passing through the second photoelectric conversion device. Thus, a subpixel for color imaging and a subpixel for infrared imaging can be positioned to overlap with each other, and an infrared imaging function can be added without a decrease in the definition of color imaging.

Imaging device and electronic device

A data processing system, a data processing device, and a data processing method are provided. The data processing system includes a wearable device including a display means and an imaging means and a database that is connected to the wearable device through a network. The database includes at least one of pieces of information on a cooking recipe, a cooking method, and a material. The wearable device detects a first material by the imaging means. The wearable device collects information on the first material from the database. When the first material exists in a specific region in an imaging range of the imaging means, the information on the first material is displayed on the display means. When the first material does not exist in the specific region, the information on the first material is not displayed on the display means.

Growing community of inventors

Hokkai-do, Japan

Takuro Kanemura