Sumco Corporation

Takuro Iwanaga

Kazunari Kurita

Takeshi Kadono

Provided is an epitaxial wafer having an excellent gettering capability and a suppressed formation of epitaxial defects. The epitaxial wafer has a specified resistivity, and includes a modifying layer formed on a surface portion of the silicon wafer and composed of a predetermined element including at least carbon, in the form of a solid solution in the silicon wafer; and an epitaxial layer having a resistivity that is higher than the resistivity of the silicon wafer, wherein a concentration profile of the predetermined element in the modifying layer in a depth direction thereof meets a specified full width half maximum and a specified peak concentration.

Epitaxial wafer manufacturing method and epitaxial wafer

Provided is a method of manufacturing an epitaxial wafer having an excellent gettering capability while suppressing formation of epitaxial defects. The method includes: a cluster ion irradiation step of irradiating a surface of a silicon wafer having a resistivity of from 0.001 &#x3a9;&#xb7;cm to 0.1 &#x3a9;&#xb7;cm with cluster ions containing at least carbon at a dose of from 2.0&#xd7;10/cmto 1.0&#xd7;10/cmto form, on a surface portion of the silicon wafer, a modifying layer composed of a constituent element of the cluster ions in the form of a solid solution; and an epitaxial layer forming step of forming, on the modifying layer on the silicon wafer, an epitaxial layer having a resistivity that is higher than the resistivity of the silicon wafer.

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Tokyo, Japan

Takuro Iwanaga