Sharp Kabushiki Kaisha Corporation

Takuro Asazu

Shinji Yamaguchi

Atsushi Ono

Kenji Toyosawa

Naoyuki Tajima

A semiconductor device of the present invention is furnished with (a) a first protection film, formed on a substrate, having an opening section on an electrode pad, (b) a protrusion electrode, connected on the electrode pad at the opening section, whose peripheral portion is formed to overlap the first protection film, (c) a second protection film, formed to cover at least a gap at a boundary portion of the first protection film and the protrusion electrode, having an opening on a top area of the protrusion electrode except a portion around the boundary portion of the first protection film and the protrusion electrode, and (d) a coating layer formed to cover a surface of the protrusion electrode at the opening of the second protection film. With this arrangement, it is possible to provide a semiconductor device wherein the protrusion electrode is formed with an electroless plating method, capable of preventing the lowering of the adhesion strength of the protrusion electrode to the electrode pad.

Semiconductor device and manufacturing method thereof

A first protection film () and a second protection film () are formed on an electrode pad (). Bumps () are formed at sites where the deposited first and second protection films (), () are both removed. The openings () where the lower, first protection film () is removed are larger than the openings () where the upper, second protection film () is removed, so that the upper, second protection film () has an overhanging structure. The bottom periphery of the bump () is formed to extend under the second protection film ().

Connection terminal and a semiconductor device including at least one connection terminal

A defect-free film is formed on a surface of a protrusive electrode. An immersion Au film is formed on the surface of the protrusive electrode, after a gap which an immersion Au plating liquid can enter evenly is formed between a protrusive electrode made of Ni or a Ni alloy on an electrode pad made of Al or mainly made of Al and a protective coat by etching.

Semiconductor device and method of manufacturing of the same

The present invention includes a step of forming an Ni bump by non-electrolytic plating in an opening of a protecting film having an insulating property formed on an electrode pad which is provided on a semiconductor substrate, and a step of removing a plating solution residue remaining in a gap between the Ni bump and the protecting film. The plating solution residue is removed by cleaning in a cleaning solution containing hydrogen peroxide, or by applying an ultrasonic wave in a cleaning solution such as pure water.

Method for manufacturing a semiconductor device

A tape carrier package includes a semiconductor chip including a first row of electrode bumps formed on a surface of a semiconductor chip and a second row of electrode bumps formed on the surface of the semiconductor chip parallel to the first row. The tape carrier package also includes an insulating film, at least a portion of the insulating film being formed on the semiconductor chip, a conductor pattern including a first lead section formed on the insulating film and connectable to an external device and a second lead section extending from the first lead section so as to electrically connect to the first and second rows of electrode bumps. At least a part of the first lead section is positioned on the semiconductor chip. A sealing resin is provided for sealing at least a junction between the first and second rows of electrode bumps and the second lead section.

Growing community of inventors

Nara, Japan

Takuro Asazu