Hitachi, Ltd.

Hitachi Displays, Ltd.

Takuo Tamura

Kiyoshi Ogata

Kazuhiko Horikoshi

Makoto Ohkura

Toshihiko Itoga

Hironaru Yamaguchi

Yoshinobu Kimura

Hironobu Abe

Yoichi Takahara

Masakazu Saitou

Ryoji Oritsuki

Miwako Nakahara

Yasushi Nakano

Yuji Takagi

Takeo Shiba

Kenji Watanabe

Yasuhiko Ozawa

Atsushi Shimoda

Yuichi Hamamura

Seiji Isogai

Takahiro Kamo

Ichirou Ishimaru

Klyoshi Ogata

Hiroshi Kikuchi

Masato Ito

Noriyuki Kumasaka

Kazuo Takeda

Masakazu Sagawa

Mikio Hongo

Shinichi Kato

Eiji Matsuzaki

Masaaki Okunaka

Norihisa Okada

Jun Gotoh

Masakazu Saito

Masatomo Terakado

Asao Nakano

Kazufumi Suenaga

Hiroaki Kasai

Michiko Takahashi

Shigeo Shimomura

Daisuke Tsutsumi

Hidenori Ueno

Souzou Sasajima

An image display device in which each pixel has a thin-film electron source composed of a lower electrode (which is a signal wire), an electron accelerating layer (which is formed by anodizing the surface of said signal wire), and an upper electrode (which covers said electron accelerating layer and releases electrons), in which the anodized film constituting said electron accelerating layer contains hydrated alumina component and anhydrous alumina component such that their ratio in the side close to the upper electrode is greater than that in the side close to the lower electrode. This structure prevents said thin-film electron source from being deteriorated in diode characteristics by said electron accelerating layer, thereby enhancing the reliability of said image display device.

Image display device

A system for analyzing defects in electronic circuit patterns, including: comparing position information of structural defects with position information of electrical faults and extracting corroborated defects having common position information between the structural defects and electrical faults; classifying images of extracted corroborated defects into critical defect images and non-critical defect images based on a pre-stored classification rule which defines critical and non-critical defects by referring to images of defects, position information of defects, and results of performing an electronic test; modifying the pre-stored classification rule by correcting classification of classified defect images displayed on the screen; and repeating the operations for each subsequent object, wherein for each present object under inspection, using a modified pre-stored classification rule with respect to a previous object, as the pre-stored classification rule for the operations with respect to the present object.

Method for analyzing circuit pattern defects and a system thereof

When any of pixels is not lit in an organic EL display having an organic EL layer between a first electrode and a second electrode, an organic layer of the pixel is observed. If the organic layer of the pixel contains foreign matter, the second electrode is separated into a region in contact with the foreign matter and a region not in contact with both the contact region and the foreign matter. Thus, not-lit display regions are reduced as less as possible, making it possible to manufacture an organic EL display excellent in display performance.

Method for manufacturing an organic electroluminescence display

The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of an amorphous silicon film formed on a subsequent substrate is measured. A value of energy density of laser beam irradiation for the subsequent amorphous silicon film is calculated on the basis of the two average film thicknesses. Accordingly, a uniform polysilicon film of large grain sizes is formed on the whole surface of a large-size substrate to provide polysilicon TFTs in a large area.

Display device and method for manufacturing the same

An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm/Vs or above.

Thin film transistor and method of manufacturing the same

In order to allow critical flaws in an inspected item to be determined early during a production process, the present invention includes the following steps: a step of detecting defects in a production process for the inspected item and storing defect positions; a step of collecting detailed defect information and storing the detailed information in association with defect positions; a step of storing positions at which flaws were generated based on a final inspection of the inspected item; a step of comparing defect positions with positions at which flaws were generated; and a step of classifying and displaying detailed information based on the comparison results.

Method and system for analyzing circuit pattern defects

Thin film transistor and display using the same

Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500&#xb0; C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.

Process for manufacturing thin film transistor on unannealed glass substrate

To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H O or N O gas is fed at a processing temperature of 500&deg; C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH /hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer with a thickness of 4 nm or more at the surface of the polycrystalline silicon layer for forming a thin-film transistor having characteristics that are less varying on a glass substrate previously not annealed.

Thin-film transistor and method of manufacturing the same

To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H O or N O gas is fed at a processing temperature of 500&deg; C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH /hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer of 4 nm or more thick at the surface of the polycrystalline silicon layer for forming a thin-film transistor having less variations of characteristics on an unannealed glass substrate.

Process of manufacturing a thin-film transistor

An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm /Vs or above.

Irradiation of manufacturing a thin film transistor by laser irradiation

Disclosed is a polysilicon film adapted for use in a liquid crystal display, and method of manufacturing such film. In manufacturing the film, a native oxide layer formed on a surface of an amorphous silicon film is completely removed by a hydrofluoric acid solution, followed by immersing in an H O solution to newly form an extremely thin oxide layer, prior to a crystallizing processing performed by a laser beam irradiation. The crystallizing processing forms a polysilicon film formed of crystal grains Preferentially oriented on the (111) plane in a direction parallel to the substrate surface, an average crystal grain size being not larger than 300 nm, the standard deviation of the grain sizes being not larger than 30% of the average grain size, and the standard deviation of the roughness being not larger than 10% of the average grain size.

Liquid crystal display element and method of manufacturing the same

Transistor with thin film active region having clusters of different crystal orientation

Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500&deg; C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.

Thin film transistor and method for manufacturing the same

A protective film which is close to a substrate of a magnetic head in term of thermal expansion coefficient and hardness when it is placed on a slide face of the magnetic head, and moreover is made of material which is high stability in water and enables the film to be formed at high speed. The protective film contains a region of composition CaMgSi.sub.2 O.sub.6 at least in a part thereof. Ca atom is surrounded by O atoms with the coordination number of eight, Mg is surrounded by O atoms with the coordination number of six, and Si is surrounded by O atoms with the coordination number of four in the atomic configuration in the region.

Magnetic head with protective film comprising amorphous CaMgSi.sub.2     b.

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Yokohama, Japan

Takuo Tamura