Sanyo Electric Co., Ltd.

Takuo Nakai

Hiroyuki Taniguchi

Teruhiko Ienaga

Yasuo Kadonaga

Masaki Shima

Naoki Yoshimura

The present invention reduces the time required to manufacture a solar cell. After etching main surfaces (BB) of a crystalline silicon substrate (B) using one etching solution, the main surfaces (BB) of the crystalline silicon substrate (B) are etched at a lower etching rate than the etching performed using the one etching solution by using another etching solution that has a higher concentration of etching components than the one etching solution. In this way, a textured structure is formed in the main surfaces (BB) of the crystalline silicon substrate (B).

Manufacturing method for solar cell

A photovoltaic element which directly converts an optical energy such as solar light into an electric energy. After many uneven sections are formed on the surface of an n-type crystalline silicon substrate ( ), the surface of the substrate ( ) is isotropically etched. Then the bottoms (b) of the recessed sections are rounded and a p-type amorphous silicon layer ( ) is formed on the surface of the substrate ( ) through an intrinsic amorphous silicon layer ( ). The shape of the surface of the substrate ( ) after isotropic etching is such that the bottoms of the recessed sections are slightly rounded and therefore the amorphous silicon layer can be deposited in a uniform thickness.

Photovoltaic element and method for manufacture thereof

A photovoltaic element which directly converts an optical energy such as solar light into an electric energy. After many uneven sections are formed on the surface of an n-type crystalline silicon substrate (,), the surface of the substrate (,) is isotropically etched. Then the bottoms (b) of the recessed sections are rounded and a p-type amorphous silicon layer (,) is formed on the surface of the substrate (,) through an intrinsic amorphous silicon layer (,). The shape of the surface of the substrate (,) after isotropic etching is such that the bottoms of the recessed sections are slightly rounded and therefore the amorphous silicon layer can be deposited in a uniform thickness.

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Osaka, Japan

Takuo Nakai