Kabushiki Kaisha Nihon Micronics

Guala Technology Co., Ltd.

Takuo Kudoh

Akira Nakazawa

Kiyoyasu Hiwada

Tomokazu Saito

Tatsuo Inoue

Takashi Tonokawa

Nobuaki Terakado

Shozo Izumo

Kazuyuki Tsunokuni

Harutada Dewa

Hikaru Takano

Tomokazu Saitoh

Juri Ogasawara

A secondary battery according to the present invention includes a first electrode, a second electrode, a charging layer arranged between the first electrode () and the second electrode and containing a mixture of an insulating material and a first n-type oxide semiconductor material, an n-type oxide semiconductor layer arranged between the charging layer and the first electrode and containing a second n-type oxide semiconductor material, a p-type oxide semiconductor layer () arranged between the charging layer and the second electrode and containing a p-type oxide semiconductor material, a mixture layer arranged between the charging layer and the p-type oxide semiconductor layer and containing a mixture of silicon oxide and a third n-type oxide semiconductor material, and a conductive layer arranged between the first electrode and the n-type oxide semiconductor layer and containing a metal material.

Secondary battery

A method for manufacturing oxide semiconductor secondary cells concurrently and evenly on a plurality of chips. A method for manufacturing a chip on which an oxide semiconductor secondary cell is mounted, the oxide semiconductor secondary cell that is formed by layering a first electrode, a charging function layer, and a second electrode being layered on a circuit. The method includes a layering process to layer and form the oxide semiconductor secondary cells integrally at regions corresponding to a plurality of chips formed on a wafer without separately forming oxide semiconductor secondary cells at regions corresponding to the respective chips, and a separating process to perform separation into individual oxide semiconductor secondary cells corresponding to the respective chips by performing pattern etching on the integrally-formed oxide semiconductor secondary cells to eliminate regions not corresponding to the respective chips except for regions corresponding to the respective chips.

Secondary battery mounted chip manufacturing method

Provided is a secondary battery which is small in size and in which current capacity per unit volume can be increased. The present invention provides a secondary battery including two cell units each including a charging layer between a first electrode layer and a second electrode layer, the two cell units being parallel-connected by juxtaposing and connecting a first electrode layer of one cell unit and a first electrode layer of the other cell unit or a second electrode layer of the one cell unit and a second electrode layer of the other cell unit, and by wire-connecting the second electrode layer of the one cell unit and the second electrode layer of the other cell unit or the first electrode layer of the one cell unit and the first electrode layer of the other cell unit.

Provided is a secondary battery in which a single-layer secondary cell has an all-solid-state secondary cell structure with a storage layer sandwiched between a positive electrode layer and a negative electrode layer and which is superior to a conventional secondary battery with respect to at least one of volume, operation, and positioning. The present invention provides a secondary battery including a folded single-layer secondary cell formed by folding a sheet-shaped single-layer secondary cell, with a storage layer sandwiched between a positive electrode layer and a negative electrode layer, two or more times while alternately reversing the folding direction.

There is provided an electrode structure for preventing cracks occurring in a metal electrode due to heating in a manufacturing process in the case of stacking an insulating resin and the metal electrode which are different in thermal expansion coefficient. An electrode for a semiconductor circuit, stacked on a substrate made of an insulating resin, has an electrode structure composed of a main electrode including a slit formed by cutting out a part thereof to prevent occurrence of a crack in a manufacturing process caused by a difference in thermal expansion coefficient from the substrate, and an auxiliary electrode that covers the slit in the main electrode. No slit is provided but a bridge is formed at a portion where the slit in the main electrode and the slit in the auxiliary electrode overlap with each other, thereby eliminating a gap portion where the electrode does not exist.

Electrode structure of solid type secondary battery

The purpose of this invention is to provide a repeatedly chargeable and dischargeable quantum battery that is available for a long period of time without an aging change. The quantum battery is charged by causing an n-type metal oxide semiconductor to have a photo-exited structural change, thereby the electrode of quantum battery is prevented from being oxide and a price reduction and stable operation are possible. The repeatedly usable quantum battery is constituted by laminating; a first metal electrode having an oxidation preventing function, charging layer in which an energy level is formed in the band gap by causing an n-type metal oxide semiconductor covered with an insulating material to have a photo-exited structure change and electrons are trapped at the energy level; p-type metal oxide semiconductor layer; and a second metal electrode having the oxidation preventing function, the electrodes are passive metal layers formed of metals having passive characteristics.

Repeatedly chargeable and dischargeable quantum battery

Provided is a secondary battery adopting an all-solid-state secondary cell structure with a storage layer sandwiched between a positive electrode layer and a negative electrode layer and which is superior to a conventional secondary battery with respect to at least one of volume, manufacturing, and positioning. The present invention provides a secondary battery including a single-layer secondary cell having a folded structure that a sheet-shaped single-layer secondary cell with a storage layer sandwiched between a positive electrode layer and a negative electrode layer is folded in two or four. Here, it is preferable that a plurality of the single-layer secondary cells each having the folded structure are arranged in parallel and adjacent single-layer secondary cells each having the folded structure are electrically connected directly or via a positive electrode terminal member or a negative electrode terminal member, so that at least one of current capacity increasing and terminal voltage heightening is achieved.

Growing community of inventors

Tokyo, Japan

Takuo Kudoh