Denso Corporation

Sumco Corporation

Takumi Shibata

Shoichi Yamauchi

Syouji Nogami

Hitoshi Yamaguchi

Toshiyuki Morishita

Tomonori Yamaoka

Shouichi Yamauchi

Toshio Sakakibara

Jun Sakakibara

Tetsuo Fujii

Minekazu Sakai

Masaru Hori

Tsuyoshi Yamamoto

Yasushi Urakami

Hitoshi Goto

Hiroshi Ohtsuki

A manufacturing method of a semiconductor substrate includes: forming a trench in a semiconductor board by a dry etching method; etching a surface portion of an inner wall of the trench by a chemical etching method so that a first damage layer is removed, wherein the surface portion has a thickness equal to or larger than 50 nanometers; and performing a heat treatment at temperature equal to or higher than 1050&#xb0; C. in non-oxidizing and non-azotizing gas so that crystallinity of a second damage layer is recovered, wherein the second damage layer is disposed under the first damage layer. The crystallinity around the trench is sufficiently recovered.

Manufacturing method of semiconductor substrate

A physical quantity detection device includes: an insulating layer; a semiconductor layer on the insulating layer; and first and second electrodes in the semiconductor layer. Each electrode has a wall part, one of which includes two diaphragms and a cover part. The diaphragms facing each other provide a hollow cylinder having an opening covered by the cover part. One diaphragm faces the other wall part or one diaphragm in the other wall part. A distance between the one diaphragm and the other wall part or the one diaphragm in the other wall part is changed with pressure difference between reference pressure in the hollow cylinder and pressure of an outside when a physical quantity is applied to the diaphragms. The physical quantity is detected by a capacitance between the first and second electrodes.

Physical quantity detection device and method for manufacturing the same

A semiconductor substrate which allows desired electrical characteristics to be more easily acquired, a semiconductor device of the same, and a method of producing the semiconductor substrate. The method of producing this semiconductor substrate is provided with: a first epitaxial layer forming step (S) of forming a first epitaxial layer; a trench forming step (S) of forming trenches in the first epitaxial layer; and epitaxial layer forming steps (S, S, S) of forming epitaxial layers on the first epitaxial layer and inside the trenches, using a plurality of growth conditions including differing growth rates, so as to fill the trenches, and keeping the concentration of dopant taken into the epitaxial layers constant in the plurality of growth conditions.

Semiconductor substrate, semiconductor device, and method of producing semiconductor substrate

A semiconductor device includes a silicon substrate having a (110)-oriented surface, a PN column layer disposed on the (110)-oriented surface, a channel-forming layer disposed on the PN column layer, a plurality of source regions disposed at a surface portion of the channel-forming layer, and gate electrodes penetrate through the channel-forming layer. The PN column layer includes first columns having a first conductivity type and second columns having a second conductivity type which are alternately arranged in such a manner that the first columns contact the second columns on (111)-oriented surfaces, respectively. The gate electrodes are adjacent to the source regions, respectively, and each of the gate electrodes has side surfaces that cross the contact surfaces of the first columns and the second columns in a plane of the silicon substrate.

Method of manufacturing a semiconductor device having a super junction

A semiconductor device is provided, which includes a substrate; a P-N column layer disposed on the substrate; a second conductivity type epitaxial layer disposed on the P-N column layer. The P-N column layer includes first conductivity type columns and second conductivity type columns, which are alternately arranged. Each column has a tapered shape. A portion of the first conductivity type column located around the substrate has a smaller impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer. A portion of the second conductivity type column located around the substrate has a larger impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer.

Semiconductor device having P-N column layer and method for manufacturing the same

Semiconductor device having super junction structure

A method for manufacturing a semiconductor device includes steps of: forming a trench on a main surface of a silicon substrate; forming a first epitaxial film on the main surface and in the trench; and forming a second epitaxial film on the first epitaxial film. The step of forming the first epitaxial film has a first process condition with a first growth rate of the first epitaxial film. The step of forming the second epitaxial film has a second process condition with a second growth rate of the second epitaxial film. The second growth rate is larger than the first growth rate.

Method for manufacturing semiconductor device and epitaxial growth equipment

A semiconductor device includes a semiconductor substrate and a super junction structure on the substrate. The super junction structure is constructed with p-type and n-type column regions that are alternately arranged. A p-type channel layer is formed to a surface of the super junction structure. A trench gate structure is formed to the n-type column region. An n+-type source region is formed to a surface of the channel layer near the trench structure. A p+-type region is formed to the surface of the channel layer between adjacent n+-type source regions. A p-type body region is formed in the channel layer between adjacent trench gate structures and in contact with the p+-type region. Avalanche current is caused to flow from the body region to a source electrode via the p+-type region without passing through the n+-type source region.

Semiconductor device

A method for manufacturing a semiconductor device includes steps of: forming a first epitaxial film on a silicon substrate; forming a trench in the first epitaxial film; and forming a second epitaxial film on the first epitaxial film and in the trench. The step of forming the second epitaxial film includes a final step, in which a mixed gas of a silicon source gas and a halide gas is used. The silicon substrate has an arsenic concentration defined as &#x3b1;. The second epitaxial film has an impurity concentration defined as &#x3b2;. The arsenic concentration and the impurity concentration has a relationship of: &#x3b1;&#x2266;3&#xd7;10&#xd7;ln(&#x3b2;)&#x2212;1&#xd7;10.

Semiconductor device, method for manufacturing the same and method for evaluating the same

A method for manufacturing a semiconductor device includes steps of: forming a trench on a semiconductor substrate, which is made of silicon; and filling the trench with an epitaxial layer. The epitaxial layer is made of silicon, and the step of filling the trench includes a step of performing a plasma CVD method with using a silicon source gas. By using anisotropic character of a plasma, the epitaxial layer is selectively deposited on a bottom of the trench. Thus, the trench is filled with the epitaxial layer having no void.

Method for manufacturing semiconductor device having trench

Closure at the opening of a trench with an epitaxial film is restrained, and thereby, filling morphology in the trenches is improved. A method for manufacturing a semiconductor substrate includes a step for growing an epitaxial layeron the surface of a silicon substrate, a step of forming a trenchin this epitaxial layer, and a step of filling the inside of the trenchwith the epitaxial film, wherein mixed gas made by mixing halogenoid gas into silicon source gas is circulated as material gas in filling the inside of the trench with the epitaxial film, and when the standard flow rate of the halogenoid gas is defined as Xslm and the film formation speed of the epitaxial film formed by the circulation of the silicon source gas is defined as Y&#x3bc;m/min, in the case when the aspect ratio of the trench is less than 10, an expression Y&#x3c;0.2X+0.10 is satisfied, and in the case that the aspect ratio of the trench is between 10 and less than 20, an expression Y&#x3c;0.2X+0.05 is satisfied, and in the case that the aspect ratio of the trench is 20 or more, an expression Y&#x3c;0.2X is satisfied.

In a semiconductor device, a p-type base region is provided in an n -type substrate to extend from a principal surface of the substrate in a perpendicular direction to the principal surface. An n -type source region extends in the p-type base region from the principal surface in the perpendicular direction, and an n -type drain region extends in the substrate separately from the p-type base region with a drift region interposed therebetween. A trench is formed to penetrate the p-type base region from the n -type source region in a direction parallel to the principal surface. A gate electrode is formed in the trench through a gate insulating film. Accordingly, a channel region can be formed with a channel width in a depth direction of the trench when a voltage is applied to the gate electrode.

Method of manufacturing semiconductor device having trench filled up with gate electrode

In a trench-gate type power MOSFET in which a gate electrode is formed on a gate oxide layer formed on a surface of a wall defining a trench, the trench is annealed by heating, for example, at the temperature between 1050&deg; C. and 1150&deg; C. in a hydrogen atmosphere before the gate oxide layer is formed. The crystal defects generated in a crystal adjacent to the trench are cured by the hydrogen annealing without enlarging the trench horizontal width, so that a trench having a high aspect ratio is provided while leak current at a PN junction is prevented. In addition, the breakdown voltage of the gate oxide layer is prevented from being lowered.

Method for manufacturing semiconductor device

Semiconductor device having trench filled up with gate electrode

A semiconductor device has a dielectric strength for a gate oxide film at a trench bottom that is higher than that of side walls used for channels. An n 0 type substrate having substrate plane orientation of (110) is prepared, and the side walls of a trench where channels are formed are in (100) planes. The other, non-channel forming, side walls of the trench are in (110) planes. Thus, the growth rate of the gate oxide film in the non-channel forming side walls and the trench bottom is faster than that in the channel forming side walls. As a result, the film thickness at the non-channel-forming side walls and the trench bottom is greater than that of the channel-forming side walls. Accordingly, the device has high mobility, and there is no drop of dielectric strength due to partial reduction of the thickness of the gate oxide film This achieves both a reduction of the ON resistance and an increase in the dielectric strength of the semiconductor device.

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Kariya, Japan

Takumi Shibata