Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Ebara Corporation

Takumi Ota

Tetsuro Nakasugi

Takeshi Koshiba

Ryoichi Inanami

Noriaki Sasaki

Yasuo Matsuoka

Hiroshi Tokue

Masahiro Hatakeyama

Ikuo Yoneda

Tatsuhiko Higashiki

Hiroyuki Mizuno

Masayuki Hatano

Shunko Magoshi

Shinji Mikami

Yohko Furutono

Kazuo Tawarayama

According to one embodiment, a plurality of test drop recipes are first created based on design data on a semiconductor integrated circuit. Based on a defect inspection result of a pattern of a hardening resin material, which is formed by pressing a template on which patterns of the semiconductor integrated circuit are formed onto the hardening resin material applied to a substrate to be processed by use of the test drop recipes, a drop recipe with least defects is selected per press position on the substrate to be processed from the test drop recipes. The selected drop recipes for respective press positions are collected per functional circuit block configuring the semiconductor integrated circuit, thereby to generate a drop recipe creation assistant database.

Drop recipe creating method, database creating method and medium

A pattern forming device uses a template having a plurality of protrusions and recesses configured to imprint a reverse image thereof on a resin on a substrate. The pattern forming device has a holding part, a stage, a driving part, and a curing part. The holding part includes a contact portion having a friction reducing contact portion, which is configured to engage against the template to hold the template. The stage carries the substrate. The driving part is configured to move at least one of the holding part and the stage to have the pattern in contact with the resin. The curing part cures the resin. The contact portion has a main body portion configured to move forward/backward with respect to the template and a tip portion arranged on the main body portion.

Pattern forming device and semiconductor device manufacturing method

According to one embodiment, an imprinting apparatus includes an ejecting unit, a stage, a moving unit, and an observation unit. The ejecting unit ejects and drips a hardening resin material onto a substrate to be processed. The substrate to be processed is placed onto the stage. The moving unit relatively moves the ejecting unit and the stage. The observation unit observes the dripped hardening resin material and the pattern with the state in which the dripped hardening resin material and the pattern are overlaid on a plane, before the template is brought into contact with the hardening resin material.

Imprinting apparatus, imprinting method, and manufacturing method of uneven plate

According to one embodiment, the template treatment method includes a substrate having a principal surface, a first pattern formed on the principal surface and including a plurality of recesses, and a second pattern formed on the principal surface at a position different from the first pattern and including a plurality of recesses. The first pattern contains a first material and the second pattern contains a second material different from the first material. The second pattern is coated with a coating containing a third material different from the first and second materials. The template is cleaned while the second pattern is coated. After the coating is removed, the second pattern is exposed.

Template treatment method

In an imprint method according to one embodiment, a template on which a template pattern is formed is pushed against resist on a substrate to be transferred while the resist is cured in this state. The template is subsequently separated from the cured resist. The template is then degassed from the template pattern surface side between after the template is separated from the cured resist and till the template is pushed against resist at the next shot.

Imprint method, imprinting equipment, and method for manufacturing semiconductor device

A charged particle beam inspection apparatus comprises: an electron gun for irradiating an electron beam onto a sample; a detector for detecting a signal obtained from the sample; an image processor for forming an image from the signal obtained from the detector, and an energy controller for controlling the beam energy of the electron beam to be irradiated onto the sample. An identical charged particle beam inspection apparatus carries out a plurality of types of inspections. An inspection apparatus of a projection type may be applied thereto. A pattern defect inspection, a foreign material inspection, and an inspection for a defect in a multilayer are carried out. Beam energies E, E, and Ein those inspections have a relation E&#x3e;Eand E&#x3e;E. Charge removal is performed in a transport chamber or other vacuum chamber before an inspection.

Method and apparatus for charged particle beam inspection

A patterning method according to an embodiment of the present invention comprises: acquiring information about a surface state of an underlying film formed on a substrate; determining, based on the surface state, whether irregularity/foreign matter is present in each shot region in which a pattern is to be formed; and solidifying a resist agent while a first template, when it is determined that no irregularity/foreign matter is present in the shot region, or a second template that is different from the first template, when it is determined that irregularity/foreign matter is present in the shot region, is brought close to the underlying film on the shot region at a certain distance with the resist agent therebetween.

Patterning method

A method for forming an imprint pattern includes:

Method for forming an imprint pattern

According to an aspect of the invention, there is provided an electron beam drawing apparatus comprising at least one stage of a deflection amplifier and a deflection unit, a first storage section which stores shot information at a drawing time, a second storage section which stores a correction table indicating a relation between the shot information and an output voltage of the deflection amplifier, and an adjusting section which adjusts an output of the deflection amplifier based on the correction table stored in the second storage section and the shot information stored in the first storage section.

Electron beam drawing apparatus, deflection amplifier, deflection control device, electron beam drawing method, method of manufacturing semiconductor device, and electron beam drawing program

A character pattern extracting method includes ranking character patterns whose number is larger than a maximum number of character patterns in an aperture, depending on the number of reference times in design data of a semiconductor device, extracting first extraction patterns whose number is smaller than the maximum number from the large number of read character patterns in a descending order of the reference time number, defining character patterns except the first extraction patterns out of the larger number of character patterns as candidate patterns, selecting from the candidate patterns a plurality of candidate patterns whose number corresponds to a difference between the number of extracted patterns from the maximum number, and creating combinations of the selected candidate patterns, and extracting second extraction patterns included in a combination among the combinations of candidate patterns, in which a manufacturing time of the semiconductor device is most shortened.

Character pattern extracting method, charged particle beam drawing method, and character pattern extracting program

According to an aspect of the invention, there is provided an electron beam lithography apparatus including a first setting unit configured to set a drawing position on a semiconductor substrate based on layout information of the semiconductor substrate, a second setting unit configured to set a valid range on the semiconductor substrate based on shape information of the semiconductor substrate, a determination unit configured to determine whether or not the drawing position falls within the valid range, and an irradiation unit configured to irradiate the semiconductor substrate with an electron beam when the determination unit determines that the drawing position falls within the valid range.

Electron beam lithography apparatus, lithography method, lithography program, and manufacturing method of a semiconductor device

A charged particle beam exposure method is disclosed, which includes preparing an aperture mask having character apertures, correcting dimensions of designed patterns in design data in consideration of at least one of factors such as a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask, and the like, allocating at least a part of a specified character aperture of the plurality of character apertures of the aperture mask to the corrected designed patterns to produce writing data, and exposing the resist to the beams of the charged particle passed through the at least a part of the specified character aperture based on the writing data.

Charged particle beam exposure method of character projection system, charged particle beam exposure device of character projection system, program for use in charged particle beam exposure device, and manufacturing method of semiconductor device

A system for correcting a charged particle beam lithography condition including: an error calculation unit configured to calculate an error in an illumination position of a charged particle beam, the charged particle beam is controlled by a lithography condition corrected by initial correction parameters; a temporary correction unit configured to calculate temporary correction parameters to decrease the error to a minimum; and a main correction unit configured to calculate main correction parameters correcting the lithography condition, by executing statistical processing using the temporary correction parameters and the initial correction parameters.

System, method and a program for correcting conditions for controlling a charged particle beam for lithography and observation, and a program and method for manufacturing a semiconductor device

Growing community of inventors

Kanagawa, Japan

Takumi Ota