Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electronics Corporation

Panasonic Holdings Corporation

Nuvoton Technology Corporation Japan

Matsushita Electrical Industrial Co., Ltd.

Takumi Mikawa

Yoshio Kawashima

Yuji Judai

Yukio Hayakawa

Takeshi Takagi

Koji Arita

Takeki Ninomiya

Toshie Kutsunai

Satoru Fujii

Atsushi Himeno

Kiyotaka Tsuji

Satoru Ito

Takashi Okada

Yoshihisa Nagano

Haruyuki Sorada

Kenji Tominaga

Kazuhiko Shimakawa

Shinichiro Hayashi

Ryoko Miyanaga

Shinichi Yoneda

Zhiqiang Wei

Hideaki Murase

Toru Nasu

Mitsuteru Iijima

Takafumi Yoshikawa

Koji Katayama

Ryotaro Azuma

Akihiro Matsuda

Keisuke Tanaka

Toyoji Ito

Yasufumi Izutsu

Ryutaro Yasuhara

Shinya Natsume

Keisaku Nakao

Ichirou Takahashi

Yuuji Jyuudai

Hiroshi Yoshida

Satoru Mitani

Shinichi Imai

Yuichiro Ikeda

Atsushi Noma

Hiroyuki Akinaga

Hisashi Shima

Kengo Nishio

Takehide Miyazaki

Yasuhisa Naitoh

Takesi Takagi

A semiconductor device includes variable resistance elements on a semiconductor substrate. Each of the variable resistance elements includes a first electrode, a second electrode, and a variable resistance layer that is sandwiched between the first electrode and the second electrode and that stores a resistance value that is continuously variable. The variable resistance layer includes a filament whose shape differs according to a neural network weight, and stores, as an analog value, the resistance value that is variable.

Semiconductor device and method of driving the same

A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxygen deficient first metal oxide containing a first metal element and oxygen, and a second variable resistance layer that includes a composite oxide containing the first metal element, a second metal element different from the first metal element, and oxygen, and having a different degree of oxygen deficiency from the first metal oxide. The composite oxide has a lower degree of oxygen deficiency than the first metal oxide. At room temperature, the composite oxide has a smaller oxygen diffusion coefficient than a second metal oxide containing the first metal element and oxygen, and having the degree of oxygen deficiency equal to that of the composite oxide.

Variable resistance non-volatile memory element and variable resistance non-volatile memory device using the element

A nonvolatile memory element including: a first electrode; a second electrode; a variable resistance layer that is between the first electrode and the second electrode and includes, as stacked layers, a first variable resistance layer connected to the first electrode and a second variable resistance layer connected to the second electrode; and a side wall protecting layer that has oxygen barrier properties and covers a side surface of the variable resistance layer. The first variable resistance layer includes a first metal oxide and a third metal oxide formed around the first metal oxide and having an oxygen deficiency lower than that of the first metal oxide, and the second variable resistance layer includes a second metal oxide having an oxygen deficiency lower than that of the first metal oxide.

Nonvolatile memory element, nonvolatile memory device, nonvolatile memory element manufacturing method, and nonvolatile memory device manufacturing method

A nonvolatile memory device includes: a pair of first wirings extending in a first direction; a second wiring extending in a second direction crossing the first direction; a pair of third wirings extending in the second direction; and a fourth wiring located between the pair of the third wirings. The nonvolatile memory device has four resistance-change elements each which is provided adjacent to respective four crossing areas in which each of the pair of first wirings intersects with each of the pair of third wirings, and a first contact plug disposed at an intersection of two diagonals of a virtual tetragon defined by the four resistance-change elements. Two transistors arranged in the second direction, among four transistors, share each one first main terminal located between the pair of the first wirings, the shared each one first main terminal being connected to the second wiring.

Nonvolatile memory device

Provided are a variable resistance semiconductor memory device which changes its resistance without being affected by an underlying layer and is suitable as a memory device of increased capacity, and a method of manufacturing the same. The semiconductor memory device in the present invention includes: a first contact plug formed inside a first contact hole penetrating through a first interlayer insulating layer; a lower electrode having a flat top surface and is thicker above the first interlayer insulating layer than above the first contact plug; a variable resistance layer; and an upper electrode. The lower electrode, the variable resistance layer, and the upper electrode compose a variable resistance element.

Semiconductor memory device and method of manufacturing the same

A nonvolatile semiconductor memory element includes: a variable resistance element including a first electrode, a variable resistance layer, and a second electrode, and having a resistance value which changes according to a polarity of an electric pulse applied between the first electrode and the second electrode; and a current steering element which is electrically connected to the variable resistance element, allows a current to flow bidirectionally, and has a nonlinear current-voltage characteristic. The current steering element (i) has a structure in which a first current steering element electrode, a first current steering layer, and a second current steering element electrode are stacked in this order, and (ii) includes a second current steering layer which covers side surfaces of the first current steering element electrode, the first current steering layer, and the second current steering element electrode.

Nonvolatile semiconductor memory element, nonvolatile semiconductor memory device, and method for manufacturing nonvolatile semiconductor memory device

A nonvolatile memory element according to the present invention includes a first metal line; a plug formed on the first metal line and connected to the first metal line; a stacked structure including a first electrode, a second electrode, and a variable resistance layer, the stacked structure being formed on a plug which is connected to the first electrode; a second metal line formed on the stacked structure and directly connected to the second electrode; and a side wall protective layer which covers the side wall of the stacked structure and has an insulating property and an oxygen barrier property, wherein part of a lower surface of the second metal line is located under an upper surface of the stacked structure.

Nonvolatile memory element, nonvolatile memory device, and manufacturing method for the same

A variable resistance nonvolatile storage element includes: a first electrode; a second electrode; and a variable resistance layer having a resistance value that reversibly changes based on an electrical signal applied between the electrodes, wherein the variable resistance layer has a structure formed by stacking a first transition metal oxide layer, a second transition metal oxide layer, and a third transition metal oxide layer in this order, the first transition metal oxide layer having a composition expressed as MO(where M is a transition metal and O is oxygen), the second transition metal oxide layer having a composition expressed as MO(where x&#x3e;y), and the third transition metal oxide layer having a composition expressed as MO(where y&#x3e;z).

Nonvolatile storage element and method for manufacturing same

A variable resistance layer between a first electrode and a second electrode includes: a first variable resistance layer contacting the first electrode; and a second variable resistance layer contacting the second electrode and having a lower degree of oxygen deficiency than the first variable resistance layer. A principal face of the first variable resistance layer which is close to the second variable resistance layer is flat. The second variable resistance layer is in contact with both the first variable resistance layer and the second electrode in a polygonal region including a vertex inward of an outline of the variable resistance layer and vertices along the outline when seen from a direction perpendicular to the principal face of the variable resistance layer, and is not in contact with at least one of the first variable resistance layer and the second electrode in a region outside the region inside the polygon.

Nonvolatile memory element and method of manufacturing the same

A method of manufacturing a semiconductor device according to the present invention includes: forming a lower electrode above a substrate; forming, above the lower electrode, a first variable resistance layer comprising a first metal oxide; forming a step region in the first variable resistance layer by collision of ions excited by plasma; removing residue of the first variable resistance layer created in the forming of the step region; forming a second variable resistance layer which covers the step region of the first variable resistance layer, comprises a second metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first metal oxide, and has a bend on a step formed along an edge of the step region; and forming an upper electrode above the second variable resistance layer.

Method of manufacturing semiconductor memory device

A method of manufacturing a nonvolatile memory device includes: forming a first electrode; forming, above the first electrode, a metal oxide material layer including a first metal oxide; forming a mask above part of the metal oxide material layer main surface; forming, in a region of the metal oxide material layer not covered by the mask, a high oxygen concentration region including a second metal oxide having a lower degree of oxygen deficiency than the first metal oxide; removing the mask; forming, above a first variable resistance layer including the high oxygen concentration region and a low oxygen concentration region that is a region of the metal oxide material layer other than the high oxygen concentration region, a second variable resistance layer including a third metal oxide having a lower degree of oxygen deficiency than the first metal oxide; and forming a second electrode above the second variable resistance layer.

Method of manufacturing a nonvolatile memory device having a variable resistance element whose resistance value changes reversibly upon application of an electric pulse

Provided is a variable resistance element (Rij) the resistance state of which is reversibly changed by applying electrical signals of different polarities; and a current steering element (Dij) in which a first current is larger than a second current, the first current being a current which flows when a voltage of the first polarity having a first value is applied, the first value being less than a predetermined voltage value and having an absolute value greater than zero, the second current being a current which flows when a voltage of the second polarity having an absolute value which is the first value is applied, the second polarity being different from the first polarity, in which Rij and Dij are connected in series such that the polarity of a voltage to be applied to Dij is the second polarity when the resistance state of Rij is changed to high resistance state.

Variable resistance nonvolatile memory device

A variable resistance layer includes a first variable resistance layer comprising a first metal oxide that is oxygen deficient and a second variable resistance layer comprising a second metal oxide having a degree of oxygen deficiency that is different from that of the first metal oxide, wherein the second variable resistance layer includes a non-metal element A that is different from oxygen, x&#x3c;(y+z) is satisfied where a composition of the first variable resistance layer is represented by MOand a composition of the second variable resistance layer is represented by NOA, the second variable resistance layer has a higher resistivity than a resistivity of the first variable resistance layer, and a film density of the second variable resistance layer is lower than a theoretical film density of the second metal oxide which has a stoichiometric composition.

Nonvolatile memory device and method for manufacturing the same

A nonvolatile memory element includes: a lower electrode formed above a substrate; a first variable resistance layer formed above the lower electrode and comprising a first metal oxide; a second variable resistance layer formed above the first variable resistance layer and comprising a second metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first metal oxide; and an upper electrode formed above the second variable resistance layer. A single step is formed in an interface between the first variable resistance layer and the second variable resistance layer. The second variable resistance layer is formed to cover the step and have, above the step, a bend (or stepped portion) covering the step. The bend, seen from above, has only one corner in a surface of the second variable resistance layer.

Nonvolatile memory element, nonvolatile memory device, and methods of manufacturing the same

In a method of manufacturing a variable resistance non-volatile memory device including non-volatile memory element layers stacked together by repeating the step (S, S. . . ) of forming a non-volatile memory element layer plural times, when a thickness of the second metal oxide layer included in each of the non-volatile memory element layers just after the step of forming the corresponding non-volatile memory element layer is completed is a thickness in formation, and when an area of a portion of the second metal oxide layer included in each of the non-volatile memory element layers and a portion of the first metal oxide layer included in the corresponding non-volatile memory element layer, which portions are in contact with each other, just after the step of forming the corresponding non-volatile memory element layer is completed is an area in formation, at least one of the thickness in formation and the area in formation is made different among the steps of forming the non-volatile memory element layers, to cause all of the non-volatile memory elements in a state in which formation of an uppermost non-volatile memory element layer is completed, to have an equal initial resistance.

Variable resistance non-volatile memory device and manufacturing method thereof

Growing community of inventors

Shiga, Japan

Takumi Mikawa