Rohm Co., Ltd.

Takumi Kanda

Masashi Hayashiguchi

Yoshitoki Inami

Masahide Tanaka

Kenji Hayashi

Masaaki Matsuo

Soichiro Takahashi

Kaito Inoue

Junji Bandai

Noriaki Kawamoto

Kohei Tanikawa

Hidetoshi Abe

A semiconductor device includes a first die pad having a main surface, a second die pad having a second main surface, a first switching element connected to the first main surface, a second switching element connected to the second main surface, a first connecting member connecting the first main surface electrode of the first switching element to the second die pad, an encapsulation resin encapsulating the first switching element, the second switching element, the first die pad, the second die pad, and the first connecting member, and leads projecting out of one of the resin side surfaces of the encapsulation resin.

Semiconductor device

A semiconductor device includes a first conductive plate, a second conductive plate, first switching elements, second switching elements, a first supply terminal and a second supply terminal. The first and second conductive plates are spaced apart from each other in a first direction. The first switching elements are bonded to the first conductive plate, and are electrically connected to the second conductive plate. The second switching elements are bonded to the second conductive plate. The first supply terminal is bonded to the first conductive plate. The second supply terminal has a region that overlaps with the first supply terminal as viewed in a plan view. The second supply terminal is spaced apart from the first conductive plate and the first supply terminal in a thickness direction perpendicular to the first direction. The second supply terminal is electrically connected to the second switching elements.

A semiconductor device includes an insulating substrate, wiring layers, heat dissipation layers, a semiconductor element, and a sealing resin. The wiring layers each have a first obverse face and a first reverse face oriented in opposite directions in a thickness direction of the substrate. The first reverse faces of the wiring layers are connected to the substrate. The heat dissipation layers each have a second obverse face oriented in the same direction as the first obverse face, and a second reverse face oriented opposite to the second obverse face in the thickness direction. The heat dissipation layers are located opposite to the plurality of wiring layers in the thickness direction with respect to the substrate. The second obverse faces of the heat dissipation layers are connected to the substrate. The semiconductor element is connected to one of the first obverse faces of the wiring layers. The sealing resin covers the substrate, the wiring layers, and the semiconductor element. As viewed in the thickness direction, the wiring layers overlap with the heat dissipation layers, respectively.

A semiconductor device includes a support member, a first switching element, a second switching element, a first passive element, a second passive element, and an electrical conductor. The support member includes a plurality of wiring parts, and the plurality of wiring parts include a first wiring section and a second wiring section spaced apart from each other in a first direction perpendicular to the thickness direction of the support member. The first switching element is electrically connected to the first wiring section. The second switching element is electrically connected to the first switching element and the second wiring section. The first passive element has a first electrode and a second electrode, and the first electrode is bonded to the first wiring section. The second passive element has a third electrode and a fourth electrode, and the fourth electrode is bonded to the second wiring section. The electrical conductor connects the second electrode and the third electrode to each other. At least one of the first passive element and the second passive element is a capacitor.

A semiconductor device includes a substrate including a main surface, a semiconductor element mounted on the main surface, a drive pad, and drive wires. The semiconductor element includes a front surface that faces in a same direction as the main surface and a drive electrode formed on the front surface and containing SiC. The drive wires are spaced apart from each other and connect the drive electrode to the drive pad. The drive wires include a first drive wire and a second drive wire configured to be a combination of furthermost ones of the drive wires. The first drive wire and the second drive wire are separated from each other by a greater distance at the drive pad than at the drive electrode as viewed in a first direction that is perpendicular to the main surface of the substrate.

A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction. The first/second terminals are connected to the first/second terminal portions, respectively.

Growing community of inventors

Kyoto, Japan

Takumi Kanda