Kabushiki Kaisha Toshiba

Nissan Motor Company Limited

Toshiba Electronic Devices & Storage Corporation

Victor Company of Japan, Limited

Fujifilm Business Innovation Corp.

Canon Kabushiki Kaisha

Nippon Piston Ring Co., Ltd.

Renault S.a.s.

Takuma Suzuki

Hiroshi Kono

Takashi Shinohe

Johji Nishio

Makoto Mizukami

Chiharu Ota

Yasushi Ishida

Masakatsu Yamada

Yutaka Mabuchi

Shigeyuki Sugiyama

Toshiyuki Takano

Shigeto Fukatsu

Daigo Nakagawa

Yuka Suzuki

Mitsuo Matsumoto

Tatsuo Shimizu

Yoshiaki Tanaka

Takashi Imai

Norihiko Fuchigami

Seiya Fujinaga

Toshiaki Saito

Nobuyuki Bannai

Makoto Satake

Toyoki Iguchi

Naomi Nakamura

Kimihiko Isobe

Tadashi Tamasho

Keiko Ariyoshi

Tomonori Miyazawa

Souzou Kanie

Junpei Ogawa

Kenji Miyata

Takashi Morimura

Masahiro Nakayama

Takayuki Sugahara

Hiroshi Hayashi

Susumu Obata

Yujiro Hara

Hisako Murata

Kenya Sano

Masatsugu Yokote

Katsuaki Ogawa

Shunsuke Asaba

Taisuke Shiraishi

Kenya Uenuma

Yutaka Mikuriya

Masaru Furukawa

Junichi Arai

Sadahiro Yasura

Takahiro Okazaki

Kazuhiro Fujimura

Tsugane Hirase

Takaaki Kondo

Masami Takeda

Yoshihisa Fujinami

Sozo Kanie

Nobuhide Kawabata

Ken Ogino

Yuichiro Nishiwaki

Hiromichi Yokokawa

Hirofumi Fujisawa

Tsutomu Shirakawa

Takaaki Kondou

Takeshi Makita

Yosuke Yamaguchi

Masato Takehi

Miki Haneishi

Katsumi Hasegawa

Naoko Aizaki

Ken Tsutsuji

Hisako Shinbara

Kazuhisa Goto

Yoshihito Seguchi

According to one embodiment, a silicon carbide semiconductor device includes a first electrode, a second electrode, a first semiconductor layer, a plurality of first semiconductor pillar regions of a first conductivity type, a second semiconductor pillar region of a second conductivity type. The first semiconductor pillar regions include a first region has a first impurity concentration and second region has a second impurity concentration higher than the first impurity concentration. The second semiconductor pillar regions include a third region has a third impurity concentration and a fourth region has a fourth impurity concentration higher than the third impurity concentration.

Silicon carbide semiconductor device including alternately provided pillars having different impurity concentrations

A heat shielding member includes a base, and a heat shielding membrane on the base. The heat shielding membrane includes a porous layer including at least a closed pore. The porous layer includes resin and carbon-based filler. The heat shielding member has both of low thermal conductivity and low heat capacity and improves the fuel economy performance.

Heat-shielding member

An information processing apparatus includes a processor configured to convert, using a conversion rule prescribing an association between order reception information on an article and manufacturing information used by each of plural manufacturers manufacturing the article in accordance with the order reception information on the article, the order reception information into the manufacturing information used by a designated manufacturer that is requested to manufacture the article.

Information processing apparatus, non-transitory computer readable medium storing information processing program, and article order reception and placement system

A semiconductor device of embodiments includes a silicon carbide layer having a first face and a second face, a gate electrode, a gate insulating layer on the first face. The silicon carbide layer includes a first silicon carbide region of a first conductive type; a second silicon carbide region of a second conductive type disposed between the first silicon carbide region and the first face; a third silicon carbide region of a second conductive type between the first silicon carbide region and the first face; a fourth silicon carbide region; a fifth silicon carbide region; a sixth silicon carbide region of a second conductive type between the first silicon carbide region and the first face and between the second silicon carbide region and the third silicon carbide region; and a crystal defect. The crystal defect is in the sixth silicon carbide region.

Semiconductor device

A semiconductor device of embodiments includes a silicon carbide layer including an element region and a termination region around the element region, the termination region having first straight-line portions extending in a first direction, second straight-line portions extending in a second direction, and corner portions between the first straight-line portions and the second straight-line portions, the termination region including a second-conductivity-type second silicon carbide region having a dot-line shape with first dot portions and first space portions surrounding the element region, an occupation ratio of the first dot portions is larger in the corner portions than in the first straight-line portions, and a second-conductivity-type third silicon carbide region having a dot-line shape with second dot portions and second space portions surrounding the second silicon carbide region, an occupation ratio of the second dot portions is lager in the corner portions than in the first straight-line portions.

A printing management apparatus includes a processor configured to acquire an order quantity being a quantity of paper required for printing, acquire a stock quantity for each attribute of paper, the stock quantity being a quantity of paper having at least one or more attributes in common with attributes of the paper which is required for the printing and is in stock by a printer, and, when the order quantity is greater than the stock quantity and a sum of at least two stock quantities is equal to or greater than the order quantity, display the printer as a printer capable of accepting an order.

Printing management apparatus and non-transitory computer readable medium storing printing management program

A heat shield component includes a substrate, and a heat shield film arranged on the substrate. The heat shield film includes a first layer arranged on the substrate, including pores, and having a thermal conductivity of 0.3 W/(m&#xb7;K) or less and a volumetric specific heat of 1200 kJ/(m&#xb7;K) or less, and a second layer arranged on the first layer to provide closed pores between the first layer and the second layer. The heat shield film has a surface roughness on a top surface which is 1.5 &#x3bc;m Ra or less. The heat shield component can achieve high heat-insulating properties and an improved effect of reducing the emission amount of hydrocarbon in an internal combustion engine, for example.

Heat shield component

A combustion chamber structure for an internal combustion engine includes a recessed portion formed in a pent roof of a cylinder head on an upstream side of a tumble flow with respect to a spark plug.

Combustion chamber structure for internal combustion engine

A printing management apparatus includes: a receiving unit that receives order information about a printed material and print data of the printed material; a generating unit that generates bar code information about a bar code assigned to each page of the printed material based on the order information; an output unit that outputs the print data and the bar code information to a printer for executing processing including printing of the printed material; an acquiring unit that, in response to a failure occurring in the processing executed by the printer on a failure page, acquires the bar code information about the bar code assigned to the failure page; and a controller that controls the output unit so that the output unit outputs the bar code information about the failure page and reprint data of a reprinted material including the failure page to the printer.

Printing management apparatus, printing system, and computer readable medium

In a piston of an internal combustion engine in which a recessed portion that holds an intake air swirling flow is formed on a crown surface of the piston, the crown surface includes a heat insulating film formation portion having a heat insulating film whose thermal conductivity is lower than a base material of the piston, the heat insulating film whose thermal capacity per volume is smaller than the base material of the piston, and a heat insulating film non-formation portion provided at a position on the more outside of a cylinder bore side of the internal combustion engine than the heat insulating film formation portion, the heat insulating film non-formation portion not having the heat insulating film.

Piston

A semiconductor device according to an embodiment includes a silicon carbide layer; a gate electrode; and a gate insulating layer which is provided between the silicon carbide layer and the gate electrode and includes a first silicon oxide layer and a second silicon oxide layer provided between the first silicon oxide layer and the gate electrode, the first silicon oxide layer having a first nitrogen concentration and a first thickness, the second silicon oxide layer having a second nitrogen concentration lower than the first nitrogen concentration and a second thickness. The second thickness between an end portion of the gate electrode and the silicon carbide layer is greater than the second thickness between a central portion of the gate electrode and the silicon carbide layer.

Gate insulating layer having a plurality of silicon oxide layer with varying thickness

A semiconductor device according to an embodiment includes a silicon carbide layer having first and second planes; first and second trenches extending in a first direction; first and second gate electrodes; a first silicon carbide region of a first conductivity type; a plurality of second silicon carbide regions of a second conductivity type between the first silicon carbide region and the first plane, located between the first trench and the second trench, and separated from each other in the first direction; a fourth silicon carbide region of the second conductivity type between two of the second silicon carbide regions and contacting the second silicon carbide region; a fifth silicon carbide region of the second conductivity type between the two second silicon carbide regions and contacting the second silicon carbide region; a first electrode contacting the first silicon carbide region; and a second electrode.

A device includes a silicon carbide layer between first and second electrodes. The silicon carbide layer includes first region, second region between the first region and second electrode, and third region between the second region and second electrode. The device includes first and second trenches, through the second and third regions and terminating within the first region, having a layer formed thereon, and spaced by portions of the second and third regions. The silicon carbide layer includes fourth region between the third region and first trench, and fifth region between the third region and second trench. The second region includes a fourth portion between first and second portions, and a fifth portion between second and third portions. The first, second, and third portions have lower impurity than the fourth and fifth portions, and the fourth and fifth portions extend closer to the first electrode than do the other portions.

Growing community of inventors

Kanagawa, Japan

Takuma Suzuki