Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Takuma Motofuji

Toshiyuki Fukuda

Takayuki Yoshida

Kouji Oomori

Naoto Ueda

Kimihito Kuwabara

Teruaki Kasai

A semiconductor device according to the present disclosure includes an electrically conductive first electrode block, an electrically conductive submount, an insulating layer, a semiconductor element, an electrically conductive bump, and an electrically conductive second electrode block. The submount is provided in a first region of the upper surface of the first electrode block, and electrically connected to the first electrode block. The semiconductor element is provided on the submount, and has a first electrode electrically connected to the submount. The bump is provided on the upper surface of a second electrode, opposite the first electrode, of the semiconductor element, and electrically connected to the second electrode. A third region of the lower surface of the second electrode block is electrically connected to the bump via an electrically conductive metal layer. An electrically conductive metal sheet is provided between the metal layer and the bump.

Semiconductor device

A laser module according to the present disclosure includes a laser diode, a first collimating lens, and a beam twister. The laser diode includes a plurality of emitters and emits laser light from each of the plurality of emitters through a light emission surface. The first collimating lens is provided at a first distance from the light emission surface of the laser diode and parallelizes a fast-axis-wise divergence of the laser light. The beam twister is provided at a second distance away from the first collimating lens and turns the laser light approximately 90 degrees. Each of the plurality of emitters has a width of 5 &#x3bc;m to 120 &#x3bc;m on the light emission surface. The plurality of emitters have a pitch of 295 &#x3bc;m to 305 &#x3bc;m on the light emission surface.

Laser module

The semiconductor laser device of the present invention has a conductive first heatsink member, a conductive first adhesive, and a semiconductor laser element. The first adhesive is disposed on the first heatsink member, and the semiconductor laser element is disposed on the first adhesive. The first adhesive reaches an upper part of the side surface of the first heatsink member under the laser emission surface for laser emission of the semiconductor laser element. The structure further improves heat dissipation of the semiconductor laser element; at the same time, it is effective in obtaining laser light from the semiconductor laser element.

Semiconductor laser apparatus and method for manufacturing same

A semiconductor deviceformed on a semiconductor chip substratehas a plurality of circuit blocks made up of circuits each containing at least a metal oxide semiconductor (MOS) transistor, the circuit blocks being covered on top with a protective filmto protect the circuits. A plurality of bumpsare formed, at least via the protective film, only on circuit blocks whose current-carrying ability and threshold voltage do not satisfy predetermined values and which are in need of performance enhancement. The bumpsimpose stresses on the MOS transistors, increasing the mobility of the MOS transistorsand thereby improving the performance of the semiconductor device

Growing community of inventors

Osaka, Japan

Takuma Motofuji