Mitsubishi Electric Corporation

Takuma Mizobe

Yasuhiro Kimura

Akihito Ohno

Masashi Sakai

Yoichiro Mitani

Kenichi Hamano

Takahiro Yamamoto

Nobuyuki Tomita

Takashi Kanazawa

Takuyo Nakamura

Provided is a method of manufacturing a silicon carbide epitaxial wafer appropriate for suppressing an occurrence of a triangular defect. A method of manufacturing a silicon carbide epitaxial wafer includes: an etching process of etching a surface of a silicon carbide substrate at a first temperature using etching gas including H; a process of flattening processing of flattening the surface etched in the etching process, at a second temperature using gas including Hgas, first Si supply gas, and first C supply gas; and an epitaxial layer growth process of performing an epitaxial growth on the surface flattened in the process of flattening processing, at a third temperature using gas including second Si supply gas and second C supply gas, wherein the first temperature T, the second temperature T, and the third temperature Tsatisfy T>T>T.

Method of manufacturing silicon carbide epitaxial wafer

A SiC substrate () has an off angle &#x3b8;&#xb0;. A SiC epitaxial layer () having a film thickness of Tm &#x3bc;m is provided on the SiC substrate (). Triangular defects () are formed on a surface of the SiC epitaxial layer (). A density of triangular defects () having a length of Tm/Tan &#x3b8;&#xd7;0.9 or more in a substrate off direction is denoted by A. A density of triangular () defects having a length smaller than Tm/Tan &#x3b8;&#xd7;0.9 in the substrate off direction is denoted by B. B/A&#x2264;0.5 is satisfied.

SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus

A semiconductor wafer includes a silicon carbide substrate having a first carrier concentration, a carrier concentration transition layer, and an epitaxial layer provided on the carrier concentration transition layer, the epitaxial layer having a second carrier concentration, and the second carrier concentration being lower than the first carrier concentration. The carrier concentration transition layer has a concentration gradient in the thickness direction. The carrier concentration decreases as the film thickness increases from an interface between a layer directly below the carrier concentration transition layer and the carrier concentration transition layer, and the carrier concentration decreases at a lower rate of decrease as the film thickness of the carrier concentration transition layer increases. The carrier concentration of the carrier concentration transition layer has the concentration gradient that falls within a predetermined concentration range lying between a first concentration gradient condition and a second concentration gradient condition.

Semiconductor wafer, semiconductor device, and method for producing semiconductor device

A manufacturing method for manufacturing a silicon carbide epitaxial wafer includes: introducing a cleaning gas into a growth furnace to remove dendrite-like polycrystal of silicon carbide attached to an inner wall of the growth furnace; after introducing the cleaning gas, bringing a silicon carbide substrate in the growth furnace; and growing a silicon carbide epitaxial layer on the silicon carbide substrate by introducing a processing gas into the growth furnace to manufacture a silicon carbide epitaxial wafer, wherein the cleaning gas having fluid energy of 1.6E-4 [J] or higher is introduced into the growth furnace.

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Fukuoka, Japan

Takuma Mizobe