Denso Corporation

Takuma Minamiyama

Masahiko Ogura

Toshiharu Makino

Satoshi Yamasaki

Hiromitsu Kato

Daisuke Takeuchi

Norio Tokuda

Kazuhiro Oyama

Takao Inokuma

A semiconductor device includes a MISFET having: a diamond substrate; a drift layer having a first layer with a first density for providing a hopping conduction and a second layer with a second density lower than the first density, and having a &#x3b4; dope structure; a body layer on the drift layer; a source region in an upper portion of the body layer; a gate insulation film on a surface of the body layer; a gate electrode on a surface of the gate insulation film; a first electrode electrically connected to the source region and a channel region; and a second electrode electrically connected to the diamond substrate. The MISFET flows current in the drift layer in a vertical direction, and the current flows between the first electrode and the second electrode.

Semiconductor device using diamond

Growing community of inventors

Kanazawa, Japan

Takuma Minamiyama