Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Takuma Matsuno

Tomohiro Yamazaki

Kenichi Murata

Hiroyuki Kawashima

Takashi Sakairi

Kentaro Akiyama

Koichi Amari

Tsuyoshi Okazaki

Keiichi Maeda

Takashi Terada

Tadayuki Dofuku

Kunihiko Hikichi

Shigetaka Mori

Tomoaki Honda

Hitoshi Okano

Kazuhiro Tamura

Katsuhisa Kugimiya

Yuu Kawaguchi

Yosuke Takita

Chiho Araki

Katsunori Dai

Shunsuke Narui

Yuuji Adachi

Hideki Kawaguchi

Seiya Haraguchi

Takayoshi Masaki

Takuya Fujino

Atsushi Tanaka

Toshiaki Okada

Kouta Fukumoto

An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Electrode structure, liquid crystal display device, projective display device, and method of manufacturing electrode structure

An imaging element of the present disclosure includes: a photoelectric conversion sectionprovided in a substrate; a polarizerformed over the photoelectric conversion section, with a single ground insulating layerinterposed therebetween; and a light shielding sectionA formed on an upper side of a peripheral region' around the photoelectric conversion section

Imaging element and solid-state imaging device

A method of manufacturing a semiconductor device, includes: forming an insulating film on a first surface of a semiconductor substrate; and forming a hydrogen supply film on a second surface facing the first surface of the semiconductor substrate, the hydrogen supply film containing one or more of silicon oxide, TEOS, BPSG, BSG, PSG, FSG, carbon-containing silicon oxide, silicon nitride, carbon-containing silicon nitride, and oxygen-containing silicon carbide.

Semiconductor device and method of manufacturing the same

Growing community of inventors

Kumamoto, Japan

Takuma Matsuno