Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Panasonic Holdings Corporation

Takuma Katayama

Kazuhiko Yamanaka

Tsuyoshi Tanaka

Mitsuyoshi Mori

Shinichi Takigawa

Shinichiro Nozaki

Yasuhiro Shimada

Takumi Yamaguchi

Kiyoshi Morimoto

Hideyuki Nakanishi

Akihiro Odagawa

Shinji Yoshida

Shuichi Nagai

Shinzo Koyama

Keisuke Tanaka

Hideki Kasugai

Toshikazu Onishi

Toshihiro Koga

Junya Aso

Masaru Shiraishi

Yosuke Mizuyama

Kenji Taniguchi

Masayuki Furuhashi

Provided is an encoder capable of achieving high position resolution without being finely divided, and capable of detecting a rotation angle or the like with high sensitivity. The encoder includes: rotary plate having a plurality of reflection structures repeatedly formed and code including light reflector; irradiator that irradiates the plurality of reflection structures with light; and light receiver that receives light reflected by the plurality of reflection structures. Each of the plurality of reflection structures has a surface in a convex shape, and each of the plurality of reflection structures has a width that is an integral multiple of a width of light reflector.

Encoder

A distance measuring device that measures a distance to an object. The distance measuring device includes: a light source that emits pulsed light; a reflector that reflects and radiates, as radiation light, the pulsed light emitted from the light source, and reflects object light that is the radiation light reflected by the object and returning; and an imager that captures the object light reflected by the reflector. The pulsed light emitted from the light source is diffused light. The light source and the imager are located to face the reflector. The reflector radiates, as the radiation light, light in a shape with a long axis and a short axis. The imager performs exposure in synchronization with the pulsed light to image the object light.

Distance measuring device and moving object

A semiconductor light-emitting element includes: an n-type cladding layer formed of a nitride semiconductor; an active layer which is arranged above the n-type cladding layer and formed of a nitride semiconductor; a p-type cladding layer arranged above the active layer and formed of a nitride semiconductor; and a p-side electrode arranged above the p-type cladding layer, wherein the p-type cladding layer contains hydrogen, and a first concentration of the hydrogen at a center of the p-type cladding layer in a region below the p-side electrode is lower than a second concentration of the hydrogen at a position located on a side closer to an outer edge than to the center in the region below the p-side electrode.

Semiconductor laser element

A visible light communication system includes a light transmitter including a group III nitride semiconductor laser element and a wavelength converter provided to face a light exit surface of the nitride semiconductor laser element and containing a fluorescent material. The visible light communication system further includes a wavelength filter configured to remove light emitted from the fluorescent material and a light receiving element configured to receive light emitted from the group III nitride semiconductor laser element via the wavelength filter.

Visible light communication system

An optical irradiation apparatus includes: a light-emitting device configured to emit a plurality of light beams whose optical axes extend in a substantially identical direction; a collimator part configured to convert the light beams into parallel light beams; and a light condensing part configured to collect the parallel light beams. The light-emitting device includes a super luminescent diode array in which a plurality of waveguides are provided on a substrate. Each of the waveguides has a light-emitting facet including a light emission point from which an associated one of the light beams is emitted. The light emission points are located in a plane. The plane including the light emission points is orthogonal to a direction of an optical axis of the collimator part.

Optical irradiation apparatus with super luminescent diodes

A light-emitting device includes: a semiconductor light-emitting element which emits light of a first wavelength; and a first wavelength conversion unit which includes a first phosphor and emits light of a second wavelength by being excited by the light of the first wavelength. The first phosphor contains europium as an activator. The light of the first wavelength is emitted to the first wavelength conversion unit at 1 kW/cmor greater. 1&#x2266;&#x3b7;1/&#x3b7;1&#x2266;1.17 is satisfied where &#x3b7;1 is light output ratio of the light of the first wavelength to the light of the second wavelength, &#x3b7;1is light output ratio obtained when the light of the first wavelength is emitted to the first wavelength conversion unit at 5 kW/cm, and &#x3b7;1is light output ratio obtained when the light of the first wavelength is emitted to the first wavelength conversion unit at 2.5 kW/cm.

Light-emitting device and projection apparatus

A light-emitting device includes: a package; a semiconductor light-emitting element mounted above the package; a cap component provided above the package; a sealing component which seals a space between the package and the cap component; and a phosphor containing resin including phosphor disposed in the sealed space.

Light-emitting device

A plurality of pixel portions () are formed on a silicon substrate (). A photoelectric converter portion () constituting each of the pixel portions () is electrically isolated by an element isolation portion () comprising an insulating film formed on the silicon substrate (). The photoelectric converter portion () partitioned by the element isolation portion () is so formed that a crystal orientation of the sides in contact with the element isolation portion () corresponds to a &#x3c;00-1&#x3e; direction. This makes it possible to reduce dark current caused by stress in the vicinity of the interface of the element isolation portion () and maintain high sensitivity even if the pixel portions () are made smaller in size.

Solid-state imaging device

A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.

Growing community of inventors

Kyoto, Japan

Takuma Katayama