Kabushiki Kaisha Toshiba

Takuma Hara

Tsuneo Ogura

Kazutoshi Nakamura

Yasunori Usui

Takeshi Uchihara

Syotaro Ono

Mitsuhiko Kitagawa

Masaru Izumisawa

Yoshiro Baba

Koichi Endo

Tetsuro Nozu

Hideyuki Ura

Yoshitaka Hokomoto

Akira Tanioka

A semiconductor device comprises an element region and a terminal region that surrounds the element region. The semiconductor device includes a first semiconductor region having a first conductivity type and a second semiconductor region having a second conductivity type and provided on the first semiconductor region. A third semiconductor region having the first conductivity type is provided on the second semiconductor region. A first electrode is electrically connected to the first semiconductor region. A second electrode is electrically connected to the third semiconductor region. A third and a fourth electrode are disposed in the element region. A distance from the first electrode to the third electrode is less than a distance from the first electrode to the fourth electrode.

Semiconductor device with varied electrodes

In one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type having first and second faces, and a second semiconductor layer of a second conductivity type disposed above the first face of the first semiconductor layer. The device further includes control electrodes facing the first and second semiconductor layers via insulating layers, and extending to a first direction parallel to the first face of the first semiconductor layer, and third semiconductor layers of the first conductivity type and fourth semiconductor layers of the second conductivity type alternately disposed along the first direction above the second semiconductor layer. The device further includes fifth semiconductor layers of the first conductivity type disposed below the second semiconductor layer or disposed at positions surrounded by the second semiconductor layer, the fifth semiconductor layers being arranged separately from one another along the first direction.

Semiconductor device

A trench gate semiconductor device including: a semiconductor layer having a first conductivity type; a first diffusion region having a second conductivity type having a planar structure on the semiconductor layer; a second diffusion region having the first conductivity type positioned selectively on the first diffusion region; a gate electrode provided via a gate insulation film in each first trench facing the second diffusion region and penetrating through the first diffusion region to reach the semiconductor layer; a first semiconductor region of the second conductivity type provided at a position, in the semiconductor layer, apart in a lateral direction from the first diffusion region; a second semiconductor region of the second conductivity type provided at a position, in the first diffusion region, between the adjacent first trenches; and a main electrode in contact with the semiconductor layer and the second diffusion region.

Trench gate semiconductor device and method of manufacturing the same

There is provided a semiconductor device having a switching element, including a first semiconductor layer including a first, second and third surfaces, a first electrode connected to the first semiconductor layer, a plurality of second semiconductor layers selectively configured on the first surface, a third semiconductor layer configured on the second semiconductor layer, a second electrode configured to be contacted with the second semiconductor layer and the third semiconductor layer, a gate electrode formed over the first semiconductor layer, a first region including a first tale region, a density distribution of crystalline defects being gradually increased therein, a peak region crossing a current path applying to a forward direction in a p-n junction, a second tale region continued from the peak region, and a second region including a third tale region, the density distribution of the crystalline defects being gradually increased therein.

Semiconductor device having switching element and method for fabricating semiconductor device having switching element

In various aspects, a MOSFET may include an active region of a first conductivity type provided on an insulating layer, the active region having a first portion and a second portion, the first portion being thicker than the second portion; a base region of the first conductivity type provided on the insulating layer, the base region having a higher impurity concentration than the first portion of the active region, the base region being in contact with the first portion of the active region and the insulating layer; a drain region of a second conductivity type provided on the insulating layer, the drain region being in contact with the second portion of the active region and the insulating layer, the drain region being spaced from the base region; a source region of the second conductivity type provided on a surface of the base region; a gate insulating layer provided on the source region, the base region, the active region and the drain region; and a gate electrode provided on the gate insulating layer.

MOSFET

A semiconductor device comprises: a first main electrode; a second main electrode; a semiconductor base region of a first conductivity type; a gate electrode provided in a trench through an insulating film, the trench being formed to penetrate the semiconductor base region; and a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type provided under the semiconductor base region. A flow of a current between the first and second main electrodes when a voltage of a predetermined direction is applied between these electrodes is controllable in accordance with a voltage applied to the gate electrode. A depleted region extends from a junction between the first and the second semiconductor regions reaching the trench.

According to the present invention, there is provided a semiconductor device having, a semiconductor substrate having a surface on which an insulating layer is formed, a first-conductivity-type first semiconductor layer formed on the insulating layer and having a first impurity concentration, a first-conductivity-type second semiconductor region formed in the first semiconductor layer from a surface of the first semiconductor layer to a surface of the insulating layer, and having a concentration higher than the first impurity concentration, a second-conductivity-type third semiconductor region formed in the first semiconductor layer from the surface of the first semiconductor layer to the surface of the insulating layer with a predetermined distance between the second and third semiconductor regions, and having a second impurity concentration, a second-conductivity-type fourth semiconductor region formed in a surface portion of the second semiconductor region, and having a concentration higher than the second impurity concentration, an insulating film formed over the surfaces of the first, second, third, and fourth semiconductor layers, and a control electrode formed on the insulating film, wherein a junction of first and second conductivity types formed between the first semiconductor layer and the third semiconductor region is positioned below the control electrode, or below an end portion, on a side of the third semiconductor region, of the control electrode, via the insulating film.

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Kamakura, Japan

Takuma Hara