Ube Industries, Inc.

Takuji Takahashi

Tomohiko Yamamoto

Yasuhiko Kohtoku

Kohji Narui

Hiroshi Inoue

Tetsuo Yamada

Toshihiko Anno

Toshiyuki Nishino

Shozo Katsuki

Takeshi Uekido

Tetsuo Nakayasu

Norihisa Komoda

Hiroto Mitsui

Atsuhiko Tanaka

Teturo Kunisawa

An aromatic polyimide film for producing an electro-conductive sealing element of a packaged semi-conductor device, has a thickness of 20 to 60 &#x3bc;m, a moisture vapor transmission coefficient of 0.05 to 0.8 g/mm/m&#xb7;24 hrs, a water absorption ratio of 2.0% or less, and an elastic modulus in tension of 5,000 MPa or more, in which a surface of the polyimide film has been treated with reduced-pressure plasma discharge.

Aromatic polyimide film for electro-conductive sealing element of packaged semi-conductor device

An aromatic polyimide film of polyimide composed of a 3,3&prime;,4,4&prime;-biphenyltetracarboxylic acid component and a p-phenylenediamine component, which has a thickness of 35 to 55 &mgr;m and is employed for manufacturing a polyimide film/metal film laminate, preferably has a linear thermal expansion coefficient of 17&times;10 to 24&times;10 cm/cm/&deg; C. (TD) in the temperature range of 50-200&deg; C., and a modulus of tensile elasticity of 700 kgf/mm or more (TD), and has a surface having been subjected to discharge treatment.

Aromatic polyimide film and film laminate

Aromatic polyimide film and its composite sheet

A SiAlON-based sintered body having a high mechanical strength and fracture toughness, as well as an excellent oxidation resistance, is provided. The SiAlON-based sintered body comprises 5 to 50% by weight of a first crystal phase of RE.alpha.-SiAlON represented by RE.sub.x (Si, Al).sub.12 (O, N).sub.16, where RE stands for at least one modifying rare earth element selected from the group consisting of Ho, Er, Tm, Yb and Lu and x has a value of 0&lt;x.ltoreq.2, 30 to 90% by weight of a second crystal phase of .beta.-SiAlON represented by Si.sub.6-z Al.sub.z O.sub.z N.sub.8-z (0&lt;z.ltoreq.4.2), and 1 to 50% by weight of a third crystal phase containing at least one rare earth element RE selected from the group consisting of Ho, Er, Tm, Yb and Lu, optionally together with 1 to 20% by weight of a crystal phase of .alpha.-silicon nitride.

Sialon-based sintered body and process for producing same

Uniform sialon powders having a sharp particle size distribution are obtained by mixing (i) amorphous silicon nitride powders, (ii) an oxygen-containing compound of silicon or/and aluminum, and (iii) aluminum metal, aluminum nitride and/or silicon, and then heating the resultant mixture at 1300.degree. to 1800.degree. C. in an atmosphere containing nitrogen.

Method for producing sialon powders

Growing community of inventors

Yamaguchi, Japan

Takuji Takahashi