Canon Anelva Corporation

Nhk Spring Co., Ltd.

Takuji Okada

Masayoshi Ikeda

Yasumi Sago

Kazuaki Kaneko

Toshihiro Tachikawa

Takashi Kayamoto

Tadashi Inokuchi

Toshikazu Nakazawa

Naoyuki Suzuki

The present invention provides a substrate heat treatment apparatus capable of uniformly heat a substrate at high speed with less breakage of constituent members due to thermal expansion even at high temperature. An embodiment of the present invention is a substrate heat treatment apparatus to perform heat treatment for a substrate and includes: a peripheral ring capable of supporting the substrate; a connection ring; a lifting device to raise and lower the peripheral ring; balls having a lower heat conductivity than that of the peripheral ring; and a lamp to heat the substrate supported by the peripheral ring. The balls are different members from both of the peripheral ring and the connection ring. The lifting device raises and lowers the peripheral ring between a first position close to the lamp and a second position distant from the lamp.

Substrate heat treatment apparatus

A method of using a heat exchanger efficiently and uniformly to cool or heats portions to be controlled to a prescribed temperature, and then continuously carry out stable processing. The heat exchanger is constructed by arranging partition walls between two plates to form a fluid channel and a fin parallel with the channel or inclined by a prescribed angle on each of the two plates insides the channel so that the plate or a member in contact with the plate is cooled or heated with the fluid flowing through the channel.

Semiconductor device manufacturing method

This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chucking electrode. This application also discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer, which have internal stress directed oppositely to that of the chucking electrode. This application further discloses a substrate processing apparatus for carrying out a process onto a substrate as the substrate is maintained at a temperature higher than room temperature, comprising the electrostatic chucking stage for holding the substrate during the process.

Electrostatic chucking stage and substrate processing apparatus

A heat exchanger efficiently and uniformly cools or heats portions to be controlled to a prescribed temperature, and then provides a surface processing apparatus which makes it possible to continuously carry out stable processing. The heat exchanger is constructed by arranging partition walls between two plates to form a fluid channel and a fin parallel with the channel or inclined by a prescribed angle on each of the two plates insides the channel so that the plate or a member in contact with the plate is cooled or heated with the fluid flowing through the channel.

Substrate processing apparatus

This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chucking electrode. This application also discloses optimum total thickness of the ESC stage, optimum volume ratio of composite which the moderation layer is made of, and an optimum range of the thermal expansion coefficient of the composite. This application further discloses a substrate processing apparatus for carrying out a process onto a substrate as the substrate is maintained at a temperature higher than room temperature, comprising the electrostatic chucking stage for holding the substrate during the process.

Growing community of inventors

Tachikawa, Japan

Takuji Okada