Mitsubishi Denki Kabushiki Kaisha

Other

Ryoden Semiconductor System Engineering Corporation

Takuji Oda

Yuji Yamamoto

Yuichi Yokoyama

Hiroshi Matsuo

Kiyoshi Maeda

Shinya Inoue

Hiroshi Fukumoto

Naoshi Yamada

Naoya Tanaka

Hitoshi Ohta

Yuichi Yoshida

Akio Yoshida

Shigeo Sasaki

Minoru Kobayashi

Hiroaki Tobuse

Tomoyuki Kanda

Eiji Shibata

Masaaki Kinoshita

Kazuaki Tanoue

Yasusi Hisaoka

Ryuji Ueda

Akihiko Yamasaki

Toshiaki Fukunishi

Tadayoshi Owaki

Terushige Hino

A method of manufacturing displays, includes at least forming a metal pattern on a surface of an insulating substrate, forming an insulating film on the metal pattern, forming a pattern of a photosensitive resin on the insulating film, and forming a contact hole in the insulating film with the film of a photosensitive resin used as a mask. The forming a contact hole is a dry etching method in which an electric field is generated between a pair of opposed electrodes after an insulating substrate has been mounted on one electrode that includes aluminum in at least a surface thereof. The dry etching method includes forming a contact hole in the insulating film with an outer circumferential portion, which surrounds a region on which the insulating substrate is mounted, of the one electrode covered with an insulating material.

Method of manufacturing displays and apparatus for manufacturing displays

An improved etching method allowing the formation of a silicon nitride film with an adequate film thickness at the sidewall portion of a pattern is disclosed. A silicon nitride film formed to cover a stepped pattern is dry-etched, employing plasma of mixed gases containing CH F and O . As a result, a sidewall spacer of the silicon nitride film is formed at the sidewall of the pattern in a self-aligned manner.

Method of manufacturing semiconductor device

A hard mask insulating layer is formed on a gate electrode which is formed on a main surface of a silicon substrate with a gate insulating layer interposed. An SiN sidewall spacer is directly formed on a thin SiO layer which is formed to cover a side surface of the gate electrode. A contact hole is formed to penetrate an interlayer insulating layer formed on an SiN stopper layer and reach the main surface of the silicon substrate.

Method of fabricating a semiconductor device

A hard mask insulating layer is formed on a gate electrode which is formed on a main surface of a silicon substrate with a gate insulating layer interposed. An SiN sidewall spacer is directly formed on a thin SiO,layer which is formed to cover a side surface of the gate electrode. A contact hole is formed to penetrate an interlayer insulating layer formed on an SiN stopper layer and reach the main surface of the silicon substrate.

Semiconductor device and fabrication method thereof

A magnetic structure and a magnetic head capable of reducing the size thereof and raising the degree of integration is disclosed which has a structure including a substrate having a plurality of ridge-like projections each having slant side-surfaces; the substrate having thereon: a first conductive passage consisting of a plurality of parallel and conductive passages each of which is formed on opposing slant surfaces of adjacent projections and on the bottom surface between the slant surfaces; a first insulating layer stacked on the first conductive passage and the substrate; a magnetic core made of magnetic material enclosed in a groove-shape recess formed by the adjacent projections and the bottom surface; a second insulating layer stacked on the magnetic core; and a second conductive passage formed on the second insulating layer to sequentially connect ends of the first conductive passage to form a helical coil, wherein the magnetic core is separated by the projection so that a plurality of coils are integrally formed on the same substrate.

Magnetic structure and magnetic head using the same

An improved etching method allowing the formation of a silicon nitride film with an adequate film thickness at the sidewall portion of a pattern is disclosed. A silicon nitride film formed to cover a stepped pattern is dry-etched, employing plasma of mixed gases containing CH.sub.2 F.sub.2 and O.sub.2. As a result, a sidewall spacer of the silicon nitride film is formed at the sidewall of the pattern in a self-aligned manner.

In a color cathode-ray tube, only a foreign matter adhering to a shadow mask is removed effectively without thermal deformation of the shadow mask or thermal denaturation of phosphors. An electron beam produced by an electron gun incorporated in a cathode-ray tube itself is scanned or irradiated to all over a shadow mask of the color cathode-ray tube. The radiant state of a fluorescent screen at this stage is checked to detect a foreign matter adhering to the shadow mask. The electron beam is deflected to align with the position at which the foreign matter is detected, and then irradiated to the foreign matter in the form of pulses. Thus, the foreign matter is heated and removed.

Method and apparatus for removing foreign matters from a cathode-ray tube

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Hyogo, Japan

Takuji Oda