Kabushiki Kaisha Toshiba

Takuji Nakazono

Hajime Sato

Hiroki Nakamura

Shinichi Kamagami

Mitsuaki Suzuki

A thin film transistor of this invention has a structure obtained by sequentially stacking, on an insulating substrate, a silicon nitride film, a silicon oxide film, a polysilicon thin film with a channel region and source and drain regions facing each other via the channel region, an insulating film, and a gate electrode. The boron concentration decreases from the channel region toward the silicon nitride film in the silicon oxide film region between the channel region and the silicon nitride film. The silicon oxide film region between the channel region and the silicon nitride film is made up of a first region which is in contact with the channel region and has a boron concentration of 1&times;10,atoms/cm,or more, and a second region between the first region and the silicon nitride film, which has a boron concentration of less than 1&times;10,atoms/cm,. The first region has a thickness of 200 &angst; or less.

Thin film transistor and method of manufacturing the same

In an image reading apparatus, first and second semiconductor chips are arranged in series on a transparent insulative base. The semiconductor chips are covered by a protective layer and have conductive pads located both side of the series arrangement of the chips. A traveling path in which a document passes is defined on the protective layer between the pads.

Growing community of inventors

Yokohama, Japan

Takuji Nakazono