Fuji Xerox Co., Ltd.

Renesas Technology Corp.

Sony Corporation

Mitsubishi Denki Kabushiki Kaisha

Fujifilm Business Innovation Corp.

Kabushiki Kaisha Toshiba

Renesas Electronics Corporation

Takuji Matsumoto

Shigenobu Maeda

Toshiaki Iwamatsu

Takashi Ipposhi

Yuuichi Hirano

Keiji Tatani

Shigeto Maegawa

Yasuo Yamaguchi

Tetsuji Yamaguchi

Kazuichiro Itonaga

Yasushi Tateshita

Masashi Nakata

Hiromitsu Koizumi

Fumihiko Koga

Toshio Takiguchi

Shoichi Miyamoto

Shigeki Nishimura

Toyohiko Awano

Kenichi Shimada

Yosuke Ninomiya

Hiroyuki Mori

Tatsuya Kunikiyo

Hirokazu Sayama

Kazunobu Ota

Naohiko Kimizuka

Takashi Nagano

Mikio Tsujiuchi

Nobuyoshi Hattori

Shinichiro Izawa

Kazuhiro Saito

Hideaki Tanaka

Kazuya Nishimura

Masayuki Nishimura

Jun Sawamura

Atsuna Saiki

Yoshiyuki Takashima

Tetsuji Okamoto

Iori Togu

Akihiro Kobayashi

Chiharu Nakajima

Shigemasa Nakaya

Kazuhiko Sakai

Naofumi Murayama

Takuya Iwamura

Mutsumi Kikuchi

Yasufumi Kayahara

Keiichi Nakazawa

Naoyuki Miyashita

Susumu Ooki

Yutaka Nishimura

Norihiro Kubo

Hideki Naruoka

Takahiro Toyoshima

Kiyoshi Sakoh

Yoshihiko Nagahama

Yuki Terakado

Hirofumi Kondo

Kaoru Watanabe

Takayuki Ukawa

Hideki Kuge

Mikio Yamaguchi

Naomasa Okimura

Shinichi Ohba

Takafumi Fujita

Koji Miyake

Taiyou Uehara

Kiyoshi Nagamine

Taichiro Okuno

Hiroki Shiba

Shigeru Fujimoto

Tsutomu Somemiya

Norio Irie

Takayuki Kondo

Takayuki Yazawa

Yasuhiro Warita

Koji Tadokoro

Hai Dang

Satoshi Ohte

Tadashi Kureyama

Shingo Natsume

Youichi Seki

A semiconductor device including a gate electrode disposed on a semiconductor substrate and source/drain regions disposed at both sides of the gate electrode, the source/drain regions being formed by implanting impurities. The source/drain regions include an epitaxial layer formed by epitaxially growing a semiconductor material having a different lattice constant from that of the semiconductor substrate in a recessed position at a side of the gate electrode, and a diffusion layer disposed in a surface layer of the semiconductor substrate.

Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion

Toner cartridge

A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

Solid-state imaging device, method of manufacturing the same, and imaging apparatus

A container mounting structure includes a container, a container mounting portion, and a regulating section. The container has an opening, extends in one direction, and contains powder. When the container disposed at a predetermined temporarily placed position is rotated in a circumferential direction of the container, the container is mounted to the container mounting portion and the opening of the container is, with the container mounting portion, caused to be exposed. The regulating section regulates the rotation of the container in the circumferential direction in a case where the container is disposed at a position deviated from the temporarily placed position.

Container mounting structure, image forming unit, and image forming apparatus

A container mounting structure includes a container and a container mounting portion. The container extends in one direction and contains powder. The container is mounted to the container mounting portion by rotating the container disposed at a temporarily placed position in a circumferential direction of the container. In a state in which the container is mounted to the container mounting portion, the container mounting structure has contact sections where the container is in contact with the container mounting portion in a radial direction of the container. Each of the contact sections is disposed at corresponding one of at least three different positions in the circumferential direction. The container is in contact with the container mounting portion from inside in the radial direction at one subset of the contact sections and from outside in the radial direction at another subset of the contact sections.

A rotating device includes a body having a bottom wall extending in one direction; a holding object including a rotating portion extending in the one direction and a supporting portion supporting the rotating portion at one end of the rotating portion in the one direction such that the rotating portion is rotatable on an axis extending in the one direction, the holding object being provided on the bottom wall; a first holding portion provided on the body and holding the supporting portion of the holding object at one end of the supporting portion in the one direction; a second holding portion provided on the body and holding the supporting portion of the holding object at an other end of the supporting portion in the one direction; and a transmitting portion provided on the body and transmitting a rotational force to the rotating portion of the holding object.

Rotating device and image forming apparatus

A container includes a container body, an opening/closing member, and a suppressing portion. The container body has a circumferential surface, and has an opening in the circumferential surface through which powder contained in the container body is discharged to outside of the container body. The opening/closing member has an inner circumferential surface. The opening/closing member is mounted to the container body, and is moved, when the container body is relatively rotated to one side in a circumferential direction of the container body, from a closed position to an open position. The opening/closing member is moved, when the container body is relatively rotated to another side in the circumferential direction, from the open position to the closed position. The suppressing portion is formed in the inner circumferential surface of the opening/closing member. The suppressing portion suppresses leakage of the powder from the opening/closing member to outside of the opening/closing member.

Container, container mounting structure, image forming unit, and image forming apparatus

Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

Solid-state imaging device, production method thereof, and electronic device

A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.

Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

A developing device includes a developer accommodating container, a developer carrier, an exhaust path, a capturing member, and a closing member. The developer accommodating container accommodates a developer. The developer carrier is disposed in an opening of the developer accommodating container to be rotated while facing an image carrier, and carries the developer. The exhaust path exhausts an air in the developer accommodating container to an outside. The capturing member captures a toner in the exhausted air passing through the exhaust path. The closing member includes a base end portion and a tip end portion. The base end portion is held by the developer accommodating container. The tip end portion is sandwiched between the developer accommodating container and the developer carried on the developer carrier, downstream of the opening in a rotation direction of the developer carrier. The closing member closes a gap.

Developing device including a capturing member and image forming apparatus

Growing community of inventors

Kanagawa, Japan

Takuji Matsumoto