Ricoh Company, Ltd.

Applied Materials, Inc.

Takuji Kato

Masaomi Sasaki

Satoshi Yamamoto

Daisuke Goto

Shinji Matsumoto

Takashi Okada

Toshiya Sagisaka

Masato Shinoda

Tamotsu Aruga

Dieter Haas

Si Kyoung Kim

Chung-Chia Chen

Hiroyuki Takahashi

Yu-Hsin Lin

Masataka Mohri

Keiichiro Yutani

Jungmin Lee

Masafumi Torii

Ji Young Choung

Shigenobu Hirano

Hiroshi Ikuno

Tamotsu Horiuchi

Takeshi Shibuya

Ikue Kawashima

Takanori Tano

Takeshi Orito

Yu-hsin Lin

Stefan Keller

Wen-Hao Wu

Takashi Anjiki

Ji-Young Choung

Chung-chia Chen

Satoshi Miyagawa

Hajime Nakanotani

Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed on and extending laterally past a base structure disposed on the PDL structure. Each second overhang is defined by a top structure disposed on and extending laterally past the body structure. The HIL material is disposed over and in contact with the anode and disposed under the adjacent first overhangs. The additional OLED material is disposed on the HIL material and extends under the first overhang.

OLED panel with advanced sub-pixel overhangs

Exemplary methods of OLED device processing are described. The methods may include forming an anode on a substrate. Forming the anode may include forming a first metal oxide material on the substrate, forming a metal layer over the first metal oxide material, forming a protective barrier over the metal layer, and forming a second metal oxide material over the amorphous protection material. The protective barrier may be an amorphous protection material overlying the metal layer.

OLED anode structures including amorphous transparent conducting oxides and OLED processing method comprising the same

Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed over and extending laterally past a base structure disposed over the PDL structure. Each second overhang is defined by a top structure disposed over and extending laterally past the body structure. The HIL material is disposed over and in contact with the anode and disposed under the adjacent first overhangs. The additional OLED material is disposed over the HIL material and extends under the first overhang.

Exemplary methods of backplane processing are described. The methods may include forming a first metal oxide material on a substrate. The methods may include forming a metal layer over the first metal oxide material. The metal layer may be or include silver. The methods may include forming an amorphous protection material over the metal layer. The amorphous protection material may include a second metal oxide material. The methods may include forming a second metal oxide material over the amorphous protection material. The second metal oxide material may include a crystalline material having one or more grain boundaries. The grain boundaries may include one or more voids.

A polymer containing a repeating unit expressed by General Formula (I): 

Arylamine polymer, method for producing the same, ink composition, film, electronic device, organic thin-film transistor, and display device

A method for producing a luminescent organic film, the method including: coating a solution containing a &#x3c0;-electron conjugated compound precursor A-(B)m and at least one kind of a luminescent dye, where the &#x3c0;-electron conjugated compound precursor A-(B)m contains a leaving substituent; and applying external stimulus to the &#x3c0;-electron conjugated compound precursor A-(B)m to eliminate the leaving substituent thereof, so that the &#x3c0;-electron conjugated compound precursor A-(B)m is converted to a &#x3c0;-electron conjugated compound A-(C)m and an eliminated compound X&#x2014;Y as in the following reaction formula (I): 

Method for producing organic electroluminescence element, and organic electroluminescence element

A leaving substituent-containing compound including a partial structure represented by the following General Formula (I): 

Method for producing a pi-electron conjugated compound

To provide an organic semiconductive material, expressed by the following general formula I: General Formula I where R1 to R10 are each independently a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, or a substituted or unsubstituted aryl group, and may be bonded to each other to form a ring; and X is a carbon atom or a nitrogen atom. 

Dithienobenzodithiophene semiconductive material and electronic device using the same

Organic electronic device containing an organic semiconductor material film which contains a leaving substituent-containing compound

An ink containing an organic semiconductive material precursor containing a dithienobenzodithiophene derivative of the following formula: X and Y are groups capable of bonding together upon application of an external stimulus to form a compound X&#x2014;Y that is capable of eliminating from the dithienobenzodithiophene derivative; Rand Rare each independently a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group; and Rto Rare each independently a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, or a substituted or unsubstituted aryl group.

Organic semiconductive material precursor containing dithienobenzodithiophene derivative, ink, insulating member, charge-transporting member, and organic electronic device

A leaving substituent-containing compound including a partial structure represented by the following General Formula (I): where a pair of Xand Xor a pair of Yand Yeach represent a hydrogen atom; the other pair each represent a group selected from the group consisting of a halogen atom and a substituted or unsubstituted acyloxy group having one or more carbon atoms; a pair of the acyloxy groups represented by the pair of Xand Xor the pair of Yand Ymay be identical or different, or may be bonded together to form a ring; Rto Reach represent a hydrogen atom or a substituent; and Qand Qeach represent a hydrogen atom, a halogen atom or a monovalent organic group, and may be bonded together to form a ring.

Leaving substituent-containing compound, products produced using the same, and methods for producing the products

An organic semiconductive material precursor containing a dithienobenzodithiophene derivative expressed by General Formula I: in General Formula I, X and Y represent groups bonded together, upon application of external stimulus, to form X&#x2014;Y which is eliminated from the compound expressed by General Formula I; Rand Reach represent a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group; and Rto Reach represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, or a substituted or unsubstituted aryl group. 

A tetrathiafulvalene derivative expressed by General Formula (I): General Formula (I) in General Formula (I), X represents an atom selected from a carbon atom, a sulfur atom, and a nitrogen atom, and Xs may be the same or different; provided that when X is the carbon atom or the nitrogen atom, Rto Reach represent one of a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, and a substituted or unsubstituted thioalkoxy group, and may be the same or different; and Yand Yeach represent one of structures expressed by General Formulas (II) and (III), and may be the same or different: General Formula (II) General Formula (III). 

Tetrathiafulvalene derivative, and organic film and organic transistor using the same

A [1]benzothieno[3,2-b][1]benzothiophene compound expressed by General Formula (I): General Formula (I) where X and Y are each independently a hydrogen atom; a halogen atom; or a functional group having a straight or branched aliphatic alkyl group optionally having a halogen atom, a functional group having an alicyclic alkyl group optionally having a halogen atom, a functional group having a straight or branched aliphatic alkenyl group optionally having a halogen atom, a functional group having an alicyclic alkenyl group optionally having a halogen atom, a functional group having a carboxyl group, or a functional group having a thiol group, as a partial structure; and X and Y are the same or each independently different, provided that at least one of X and Y has a straight or branched aliphatic alkenyl group, an alicyclic alkenyl group, a carboxyl group or a thiol group, as a partial structure. 

[1]benzothieno[3,2-B][1]benzothiophene compound and method for producing the same, and organic electronic device using the same

A benzobisthiazole compound having a specific formula, and a benzobisthiazole polymer having a specific benzothiazole structure. An organic film including the benzobisthiazole polymer, the benzobisthiazole compound and/or a polymer obtained from the benzobisthiazole compound. An organic thin-film transistor including an organic semiconductor layer including the organic film; a pair of electrodes configured to flow an electric current through the organic semiconductor layer; and a third electrode configured to apply a voltage to the organic semiconductor layer.

Growing community of inventors

Fukuoka, Japan

Takuji Kato