Rohm Co., Ltd.

Osaka University

Shimadzu Corporation

Fuji Electric Co., Ltd.

Tokyo Electron Limited

Canon Anelva Corporation

Panasonic Holdings Corporation

Takuji Hosoi

Heiji Watanabe

Takayoshi Shimura

Yuki Nakano

Shuhei Mitani

Takashi Kirino

Takashi Nakamura

Toshinori Yoshimuta

Satoshi Sano

Takahiro Doki

Akira Horiba

Taro Shirai

Koichi Tanabe

Kenji Kimura

Ryota Nakamura

Yukihisa Wada

Hiroyuki Kishihara

Shuji Azumo

Yusaku Kashiwagi

Takuro Izumi

Hirokazu Asahara

Mitsuru Sometani

Mikito Nozaki

Takashi Nakagawa

Takahiro Yamada

Masatoshi Aketa

Kenji Yamamoto

Naomu Kitano

Yoshiharu Anda

Yuichiro Morozumi

Satoshi Nakazawa

Yu Wamura

Nobuo Yamaguchi

Takuya Seino

Katsushige Harada

Naohiro Tsurumi

Kosuke Takahashi

Akihiro Nishimura

Takashi Minami

Hong-An Shih

A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a surface layer portion of the semiconductor layer and has a channel region defined therein. A source region that is a first conductivity type source region is formed on a surface layer portion of the well region. A gate insulating film is formed on the semiconductor layer and has a multilayer structure. A gate electrode is opposed to the channel region of the well region where a channel is formed through the gate insulating film.

Semiconductor device

A semiconductor device including: a metal-insulator-semiconductor (MIS) structure that includes a nitride semiconductor layer, a gate insulator film, and a gate electrode stacked in stated order; and a source electrode and a drain electrode that are disposed to sandwich the gate electrode in a plan view and contact the nitride semiconductor layer. The gate insulator film includes a threshold value control layer that includes an oxynitride film.

A semiconductor device has an MIS structure that includes a semiconductor layer, a gate insulating film on the semiconductor layer, and a gate electrode on the gate insulating film. The gate insulating film has a layered structure that includes a base SiOlayer and a high-k layer on the base SiOlayer and containing Hf. The gate electrode has a portion made of a metal material having a work function of higher than 4.6 eV, the portion being in contact with at least the high-k layer.

Semiconductor device including an MIS structure

This X-ray phase contrast imaging apparatus () includes an X-ray source () that radiates continuous X-rays, a first grating () that forms a self-image, a second grating (), a detector () that detects the continuous X-rays, and a third grating () arranged between the detector () and the first grating. The first grating (), the second grating (), and the third grating () are arranged so as to satisfy conditions of predetermined formulas.

X-ray phase contrast imaging apparatus

A method for manufacturing a semiconductor device includes: thermally-oxidizing a surface of a to-be-processed base made by SiC as body material to form a silicon dioxide film, by supplying gas containing oxidation agent to the surface of the to-be-processed base; exchanging ambient gas containing the oxidation agent after forming the silicon dioxide film, by decreasing a partial pressure of the oxidation agent in the ambient gas to 10 Pa or less; and after exchanging the ambient gas, lowering a temperature of the to-be-processed base.

Method for manufacturing semiconductor device and semiconductor manufacturing apparatus used for the method

An X-ray phase contrast imaging device of the present invention can change an arrangement pitch of slits related to a multi-slit and an arrangement pitch of phase shift sections related to a phase grating. A positional relationship among the multi-slit, the phase grating, and an FPD is determined based on the arrangement pitch of the slits related to the multi-slit, the arrangement pitch of the phase shift sections related to the phase grating, and an arrangement pitch of detection elements related to the FPD. Among these arrangement pitches, by changing the arrangement pitch of the slits and the arrangement pitch of the phase shift sections, the present invention can change the positional relationship among the multi-slit, the phase grating, and the FPD.

Radiation phase contrast imaging device

[PROBLEM TO BE SOLVED] To provide a radiation phase contrast imaging device having a small device configuration [SOLVING MEANS] The present invention focused on the findings that the distance between the phase gratingand the FPDdoes not need to be the Talbot distance. The distance between the phase gratingand the FPDcan be more freely set. However, a self-image cannot be detected unless the self-image is sufficiently magnified with respect to the phase grating. The degree on how much the self-image is magnified on the FPDwith respect to the original phase gratingis determined by a magnification ratio X/X. Therefore, in the present invention, the magnification ratio is set to be the same as the magnification ratio in a conventional configuration. With this, even if the distance Xbetween the radiation sourceand the FPDis reduced, a situation in which the self-image cannot be detected by the FPDdue to the excessively small size thereof does not occur.

A semiconductor device () includes a base layer (), an interface layer (), and a deposition layer (). The base layer () includes a nitride semiconductor that contains gallium. The interface layer () is adjacent to the base layer (). The interface layer () contains gallium oxide. The deposition layer () is adjacent to the interface layer (). The deposition layer () has a wider band gap than the interface layer (). The interface layer () preferably has crystallinity. The interface layer () preferably contains &#x3b1;-phase GaO.

Semiconductor device and method for manufacturing semiconductor device

Growing community of inventors

Osaka, Japan

Takuji Hosoi