Mitsubishi Electric Corporation

Takuichiro Shitomi

Junichi Yamashita

Kazuhiro Shimizu

Manabu Yoshino

Yusuke Kawase

Satoshi Rittaku

Kazuhisa Koga

An object is to provide a technique for preventing an oxide film from being partly thin. A third oxide film is formed onto a nitride film in a first area; in addition, a fourth oxide film is formed onto a main surface in a second area. The third oxide film, the nitride film, and a first oxide film are removed from the first area using a mask. After the third oxide film, the nitride film, and the first oxide film are removed, a fifth oxide film is formed onto the main surface in the first area. The fifth oxide film is removed from the first area using a mask. After the fifth oxide film is removed, a sixth oxide film is formed onto the main surface in the first area.

Method for manufacturing semiconductor device

A semiconductor device manufacturing method includes an element forming step of forming an element structure on a front surface of a substrate and forming a back structure on a back surface of the substrate, and a film forming step of performing film forming on a front surface of the element structure while measuring the temperature of the substrate by using a radiation thermometer that applies infrared rays of a wavelength &#x3bb;i to the back structure to obtain an infrared emissivity of the substrate. The back structure has a first layer exposed to the outside and a second layer in contact with the first layer, the refractive index of the second layer being smaller than that of the first layer, and the layer thickness of the first layer is set in a range from (2n&#x2212;1)&#x3bb;i/8 to (2n+1)&#x3bb;i/8, with n being a positive even number.

Semiconductor device manufacturing method

A method of manufacturing a semiconductor device, includes the steps of forming a top surface nitride film on a top surface of a substrate and a bottom surface nitride film on a bottom surface of the substrate, forming a protective film on the top surface nitride film, removing the bottom surface nitride film by wet etching while the top surface nitride film is being protected by the protective film, removing the protective film after the removing of the bottom surface nitride film, patterning the top surface nitride film so as to form an opening in the top surface nitride film, and forming a second oxide film on the bottom surface of the substrate while forming a first oxide film on a surface portion of the substrate which is exposed by the opening.

Method of manufacturing semiconductor device

An SOI wafer according to the present invention includes a support substrate and an insulating layer formed on the support substrate, a predetermined cavity pattern being formed on one of main surfaces of the support substrate on which the insulating layer is provided, further includes an active semiconductor layer formed on the insulating layer with the cavity pattern being closed, the active semiconductor layer not being formed in an outer peripheral portion of the support substrate, and further includes a plurality of superposition mark patterns formed in the outer peripheral portion on the one of the main surfaces of the support substrate for specifying a position of the cavity pattern.

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Tokyo, Japan

Takuichiro Shitomi