Wako Pure Chemical Industries, Inc.

Takuhiro Kimura

Reiji Miyahara

Atsunori Sano

Hironori Mizuta

Tsutomu Tani

Yoji Urano

Kimihiko Sano

The present invention is directed to provide a semiconductor surface treating agent; composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used. The present invention relates to a semiconductor surface treating agent; composition, comprising [I] a compound generating a fluorine ion in water, [II] a carbon radical generating agent; , [III] water, [IV] an organic solvent, and [V] at least one kind of compound selected from a group consisting of hydroxylamine and a hydroxylamine derivative represented by the general formula [1], as well as a method for treating the semiconductor surface, comprising that the composition is used: (wherein Rrepresents a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups; Rrepresents a hydrogen atom, a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups).

Processing agent composition for semiconductor surface and method for processing semiconductor surface using same

A process for producing an aminoalkylsulfonic acid of formula [2]:  wherein Rand Rare each independently hydrogen, alkyl, aryl or aralkyl; and Rand Rare each independently hydrogen or alkyl, comprising reacting an aminoalkylsulfonate salt of formula [1]:  wherein M is alkali metal, organic ammonium or ammonium ion; and Rto Rare as described above, an aqueous solution thereof, or a solution dissolving any one of them in a water-soluble organic solvent, selected from alcohols having 1 to 3 carbon, carboxylic acids having 2 to 12 carbon and dimethylformamide, with an organic acid; and a method of salt exchange for an aminoalkylsulfonate salt of formula [1']:  wherein M&#x2032; is alkali metal, organic ammonium or ammonium ion; and Rand Rare as described above, comprising reacting the aminoalkylsulfonate salt formula [2] with a hydroxide of formula [6]:M&#x2032;OH[6] wherein M&#x2032; is as described above, in alcohol or water.

Process for producing of an aminoalkylsulfonic acid and a method of salt exchange for a salt thereof

The present invention provides a method for preparation of a quaternary ammonium salt comprising reacting an alkyl halide with 2 equimolar amount or more per the alkyl halide of a pyridine compound or an N-lower alkyl imidazole at 120&deg; C. to 350&deg; C., and a method for the continuous production of a quatemary ammonium salt comprises introducing continuously an alkyl halide and 2 equimolar amount or more per the alkyl halide of a pyridine compound or an N-lower alkyl imidazole into a pipe reactor from the one end thereof under heating at 120 to 350&deg; C. to pass through the pipe reactor wherein a reaction is allowed to take place, and taking out continuously the resulting quaternary ammonium salt from the other end of the reactor.

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Saitama, Japan

Takuhiro Kimura