Sony Corporation

Sony Group Corporation

Sony Semiconductor Solutions Corporation

Sony Electronics Inc

Sont Group Corporation

Taku Umebayashi

Hiroshi Takahashi

Reijiroh Shohji

Takashi Yokoyama

Keiji Tatani

Ikuo Yoshihara

Masanori Hosomi

Yutaka Higo

Hajime Inoue

Ryuichi Kanamura

Shunichi Sukegawa

Hironobu Yoshida

Nobutoshi Fujii

Toshihiko Hayashi

Hiroshi Yoshioka

Hiroyasu Matsugai

Masaya Nagata

Keishi Inoue

Yoichi Otsuka

Naoto Sasaki

Tokihisa Kaneguchi

Isaya Kitamura

Mayoshi Aonuma

A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

Semiconductor device and method of manufacturing the same, and electronic apparatus

A semiconductor device according to an embodiment of the present disclosure includes: a first substrate provided with an active element; and a second substrate laminated with the first substrate and electrically coupled to the first substrate, in which the second substrate is provided with a first transistor configuring a logic circuit on a first surface and with a non-volatile memory element on a second surface opposite to the first surface.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.

Semiconductor device, solid-state imaging device and electronic apparatus

A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.

Semiconductor device, manufacturing method thereof, and electronic apparatus

A semiconductor device according to an embodiment of the present technology, and the semiconductor device includes: a first substrate provided with a memory array; and a second substrate that is stacked with the first substrate, and is provided with a peripheral circuit that controls operation of the memory array.

Semiconductor device

A semiconductor device including a semiconductor substrate having a first surface and a second surface that face each other, and having an element region and an isolation region, the element region including a transistor in the first surface, and the isolation region including an element isolation layer surrounding the element region; and a contact plug extending from the first surface to the second surface in the isolation region of the semiconductor substrate.

Semiconductor device with transistor in semiconductor substrate and insulated contact plug extending through the substrate

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Kanagawa, Japan

Taku Umebayashi