Lapis Semiconductor Co., Ltd.

Taku Shibaguchi

Toru Mori

Kenji Oonuki

A semiconductor device includes a semiconductor substrate and a first memory cell disposed on the semiconductor substrate. The first memory cell includes a first write and erasure transistor, a first read transistor, and a first charge transfer reduction transistor. The first write and erasure transistor controls data writing and erasing. The first read transistor controls data reading. The first charge transfer reduction transistor reduces injection of an electric charge to the first write and erasure transistor and the first read transistor.

Semiconductor memory with charge transfer reduction transistor

A semiconductor device includes a semiconductor substrate, and a nonvolatile memory cell disposed on the semiconductor substrate. The nonvolatile memory cell includes a field-effect transistor for data writing, and a field-effect transistor for data readout that is adjacent to the field-effect transistor for data writing. Each of the field-effect transistor for data writing and the field-effect transistor for data readout includes a gate insulating film formed on the semiconductor substrate, a floating gate formed on the gate insulating film, and diffusion layers configuring a source region and a drain region on respective sides of the floating gate viewed in the thickness direction of the semiconductor substrate. The thickness of the gate insulating film of the field-effect transistor for data readout, and the thickness of the gate insulating film of the field-effect transistor for data writing, are different.

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Miyagi, Japan

Taku Shibaguchi