Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Taku Nishiyama

Naohisa Okumura

Katsuyoshi Watanabe

Kiyokazu Okada

Tetsuya Yamamoto

Atsushi Kondo

Takashi Okada

Kazuhide Doi

Takeshi Ikuta

Akihisa Fujimoto

Noriya Sakamoto

Yoriyasu Ando

Akinori Ono

Takuya Futatsuyama

Hideo Aoki

Chiaki Takubo

Toshitada Saito

Hitoshi Ishii

Keisuke Sato

Soichi Homma

Shigeto Endo

Junichi Asada

Michio Ido

Katsuhiko Oyama

Yasuo Takemoto

Tadanobu Okubo

Atsuko Seki

Katsuya Sakai

Hideki Kawamura

Hidetoshi Suzuki

Yuichi Hotta

Yuji Shimoda

Tsubasa Natsumeda

Yuuji Ogawa

Junichi Onodera

According to one embodiment, a semiconductor memory device includes a housing and terminals. The housing has a first end edge extending in a first direction and a second end edge opposite to the first end edge. The terminals include signal terminals and include first terminals, second terminals, and third terminals. The first terminals are arranged in the first direction at a position close to the first end edge. The second terminals are arranged in the first direction with intervals at a position closer to the first end edge than the second end edge. The first plurality of terminals are closer to the first end edge than the second plurality of terminals are. The third terminals are arranged in the first direction with intervals at a position closer to the second end edge than the first end edge.

Semiconductor memory device

Integrated circuit card

Integrated circuit built-in card

According to one embodiment, a semiconductor storage device includes a housing, a plurality of terminals, signal terminals, a controller, signal wiring, and a memory. The housing has a first face and a second face opposite to the first face. The plurality of terminals is exposed to the first face, extends in a first direction, and is spaced apart in a second direction intersecting with the first direction. A signal terminal included in the plurality of terminals has a first end in the first direction, and a second end opposite to the first end in the first direction, the second end being closer to a contact position with a socket contact than the first end. The controller is located in the housing. The signal wiring extends from the first end in the housing and electrically connects the first end and the controller. The memory is electrically connected to the controller in the housing.

Semiconductor storage device

A memory card includes a substrate, a nonvolatile memory on the substrate, a memory controller on the substrate and configured to control access to the nonvolatile memory, an interface terminal for external wired connection, on the substrate, an antenna, a plain region surrounded by the antenna including a first region that overlaps with the substrate and a second region that does not overlap with the substrate, and a communication controller disposed on the substrate, electrically connected to the antenna, and configured to wirelessly communicate with an external device through the antenna, using power generated at the antenna by an electromagnetic induction caused by the external device.

Wirelessly-communicable memory card

A semiconductor memory card includes a lead frame having external connection terminals, a controller chip mounted on the lead frame and a memory chip mounted on the lead frame. The lead frame, the controller chip, and the memory chip are sealed with a sealing resin layer that has a surface at which the external connection terminals are exposed and a recess surrounding the external connection terminals.

Semiconductor memory card

According to one embodiment, a semiconductor module has a substrate, two nonvolatile memories disposed on a first surface of the substrate, a controller to control the nonvolatile memories, disposed on the first surface of the substrate and between the two nonvolatile memories, and a plurality of terminals that are electrically connected to the two nonvolatile memories and to the controller, disposed on a second surface of the substrate.

Semiconductor module

According to the embodiment, a semiconductor storage device includes an organic substrate, a semiconductor memory chip, a lead frame, and a resin mold section. The lead frame includes an adhering portion. The organic substrate is singulated to have a shape in which a portion in which the organic substrate does not overlap with the placing portion is larger than a portion in which the organic substrate overlaps with the placing portion, in plan view. The lead frame further includes a first extending portion in the adhering portion that extends to a surface different from a surface of the resin mold section on a side of an insertion direction.

Semiconductor storage device and manufacturing method thereof

According to one embodiment, a semiconductor storage device is provided with a memory chip including a storage circuit, a controller chip that controls a memory chip, and a substrate having a first surface and a second surface opposing one another, on the first surface of which the controller chip is mounted. Further, the semiconductor storage device is provided with an external connection terminal formed on the second surface of the substrate, and resin that encapsulates the memory chip, the controller chip, and the substrate, includes a third surface and a fourth surface opposing one another, and has a predetermined mark directly printed only on the fourth surface that is adjacent to the second surface of the substrate.

According to one embodiment, a semiconductor storage device includes a plate and an external connection terminal. The plate is molded in a resin mold section. A semiconductor memory chip is placed on the plate. The external connection terminal is exposed to the outer circumferential surface of the semiconductor storage device. The plate includes a plurality of exposed portions exposed to the outer circumferential surface of the resin mold section. The plurality of exposed portions is electrically insulated from each other inside the resin mold section.

Semiconductor storage device and a method of manufacturing the semiconductor storage device

In an embodiment, a semiconductor memory card includes a lead frame including external connection terminals, a lead portion, a chip component mounting portion and a semiconductor chip mounting portion, a chip component mounted on the chip component mounting portion, a memory chip disposed on the semiconductor chip mounting portion, and a controller chip. A rewiring layer is formed on a surface of the memory chip. The lead frame is resin-sealed. An electric circuit of the controller chip and the memory chip on the lead frame is formed by the lead portion, the rewiring layer and a metal wire connected to electrode pad of the chips, the lead portion, and the rewiring layer.

A semiconductor memory device includes: a wiring board including an element mounting portion and connection pads; a first element group including a plurality of semiconductor elements each having electrode pads arranged along one of outer sides of the semiconductor element, the plurality of semiconductor elements being layered stepwise on the element mounting portion of the wiring board in a way that pad arrangement sides of the semiconductor elements face in the same direction, and that the electrode pads are exposed; a second element group including a plurality of semiconductor elements each having electrode pads arranged along one of outer sides of the semiconductor element, the plurality of semiconductor elements being layered stepwise on the first element group in a way that pad arrangement sides of the semiconductor elements face in the same direction as that of the first element group, and that the electrode pads are exposed, the second element group being disposed to be offset from the first element group in an arrangement direction of the electrode pads;

According to one embodiment, a semiconductor device includes a memory chip and a controller chip. A circuit board includes a first surface on which an array of external connection terminals are provided and an second surface on which the memory and controller chips are provided. An array of connection pads is provided on the second surface and outside the memory chip at an external connection terminal side. An array of resistor devices is provided on the second surface and along the array of connection pads at the opposite side of the memory chip. Plugs outside near-memory-chip ends of the external connection terminals penetrate the first and surfaces. A first wiring passes outside the array of resistor devices and the array of connection pads on the second surface, and connects one resistor device and one plug. A second wiring on the first surface connects one plug and one external connection terminal.

A semiconductor memory card includes a wiring board which has a first pad region along a first long side and a second pad region along a second long side. First memory chips which configure a first chip group are stacked in a step-like shape on the wiring board. Second memory chips which configure a second chip group are stacked in a step-like shape on the first chip group with the direction reversed. The electrode pads of the first memory chips are electrically connected to the connection pads arranged on the first pad region, and the electrode pads of the second memory chips are electrically connected to the connection pads arranged on the second pad region.

Semiconductor memory device and semiconductor memory card

Growing community of inventors

Yokohama, Japan

Taku Nishiyama