Shin-etsu Chemical Co., Ltd.

Taku Morisawa

Koji Hasegawa

Tsutomu Ogihara

Yuji Harada

Jun Hatakeyama

Motoaki Iwabuchi

Masayoshi Sagehashi

Yusuke Biyajima

Takeshi Nagata

Takeshi Sasami

Takao Yoshihara

The present invention provides a method for forming a coating film for a lithography, comprising the steps of: performing spin coating of a composition for forming a coating film for a lithography onto a substrate for producing a semiconductor device by using a spin coating device provided with an integrated filter in which a filtration membrane and a housing are integrated; and heating the substrate coated with the composition for forming a coating film for a lithography; thereby forming a coating film for a lithography on the substrate, wherein the integrated filter is a filter in which eluting material is in at amount of 3 mg or less per a filter, the eluting material being extracted by circulating an organic solvent at a rate of 10 ml/min for 24 hours. This method enables to form a coating film for a lithography with its coating defects extremely reduced.

Method for forming coating film for lithography

Provided by the present invention is a method for producing a resist composition, especially a silicon-containing resist underlayer film composition, with fewer film defects, the composition used in immersion exposure, double patterning, development by an organic solvent, and so forth. Specifically, provided is a method for producing a resist composition to be used for manufacturing a semiconductor device, wherein the resist composition is filtered using a filter which filters through 5 mg or less of an eluate per unit surface area (m) in an extraction using an organic solvent.

Method for producing resist composition

A fluorinated monomer has formula (1) wherein Ris H, F, methyl or trifluoromethyl, Ris a monovalent hydrocarbon group which may have halogen or oxygen, A is a divalent hydrocarbon group, and kis 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition. 

Fluorinated monomer, fluorinated polymer, resist composition, and patterning process

A polymer having a partial structure &#x2014;C(CF)OH in recurring units is used as an additive to formulate a resist composition. A photoresist film formed from the resist composition has sufficient barrier performance against water to prevent any resist components from being leached in water and thus minimize any change of pattern profile.

Resist composition and patterning process

A positive resist composition based on a polymer comprising recurring units of (meth)acrylate having a cyclic acid labile group and a dihydroxynaphthalene novolak resin, and containing a photoacid generator is improved in resolution, step coverage and adhesion on a highly reflective stepped substrate, has high resolution, and forms a pattern of good profile and minimal edge roughness through exposure and development.

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Joetsu, Japan

Taku Morisawa