Tdk Corporation

Taku Masai

Masahito Furukawa

Masamitsu Haemori

Satoshi Wada

Ryuji Hashimoto

Hitoshi Sakuma

Kyung-Ku Choi

Yoshikazu Shimura

Junichi Yamazaki

Tomohisa Azuma

Sanshiro Aman

Toshiyasu Fujiwara

Hiroki Katoh

Yuko Saya

Keisuke Teranishi

Hidesada Natsui

Daisuke Ohtsu

Liu Hailong

Liang Liping

Kouhei Ohhashi

The object of the present invention is to provide the dielectric composition having good specific permittivity, high DC breakdown voltage and AC breakdown voltage, small dielectric loss and heat generating property, and good temperature property even though lead is not substantially used. A dielectric composition of the first aspect includes a, Ca, Bi, Ti, and Sr, wherein the dielectric composition includes two phases having different Sr characteristic X ray intensities when a characteristic X ray intensity derived from Sr is measured by EPMA, and when Srrepresents the characteristic X ray intensity derived from Sr of a first phase measured by EPMA and Srrepresents the characteristic X ray intensity derived from Sr of a second phase measured by EPMA, a ratio (Sr/Sr) of Srwith respect to Srsatisfies 2 or larger. A dielectric composition of the second aspect includes Ba, Ca, Bi, Ti, and Sr, wherein the dielectric composition includes three phases having different Sr characteristic X ray intensities when a characteristic X ray intensity derived from Sr is measured by EPMA, and when Srrepresents the characteristic X ray intensity derived from Sr of a first phase measured by EPMA, Srrepresents the characteristic X ray intensity derived from Sr of a second phase measured by EPMA, and Srrepresents the characteristic X ray intensity derived from Sr of a third phase measured by EPMA, an intensity ratio (Sr/Sr) of Srwith respect to Sris 0.6 or less and an intensity ratio (Sr/Sr) of Srwith respect to Sris 1.4 or more.

Dielectric composition and electronic component

A composite piezoelectric ceramic includes a compact of crystal particles including at least one of potassium niobate (KNbO) and sodium niobate (NaNbO) and optionally further including lithium niobate (LiNbO), and a layer containing barium titanate (BaTiO) that is disposed on the surface of the compact while forming a heterojunction with the compact. A piezoelectric device includes the composite piezoelectric ceramic.

Composite piezoelectric ceramic and piezoelectric device

The present invention aims to provide a piezoelectric composition and a piezoelectric element. In the piezoelectric composition, the main component is represented by the following formula with a perovskite type structure,(BiNa)(TiMgMe)Owherein, 0.05&#x2266;x&#x2266;0.7, 0.01&#x2266;y&#x2266;0.7, 0.01&#x2266;z&#x2266;0.6, 0.75&#x2266;m&#x2266;1.0, x+y+z=1 and the transition metal element Me is any one or more selected from the group consisting of Mn, Cr, Fe and Co.

Piezoelectric composition and piezoelectric element

The present invention aims to provide an excellent piezoelectric composition and an excellent piezoelectric element if the piezoelectric properties especially a high spontaneous polarization and a sufficiently high resistivity, the low pollution, the environment and the ecology are considered. In the piezoelectric composition, the main component contains the substance represented by the following formula with a perovskite-typed structure, (BiNa)(TiMgAl)O. Wherein, 0.01&#x2266;x&#x2266;0.8, 0.2&#x2266;y&#x2266;0.8, 0.01&#x2266;z&#x2266;0.6, 0.75&#x2266;m&#x2266;1.0, and x+y+z=1.

Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of BiMeO.

Piezoelectric composition and piezoelectric device

A novel ceramic composition having a high relative dielectric constant. A ceramic composition includes a unit cell having at least two crystal structures selected from the group made of a monoclinic crystal, a tetragonal crystal, an orthorhombic crystal, and a rhombohedral crystal, characterized in that when the crystal structures are represented by the symmetry notation according to the Glazer method, namely xyz, n1, n2, and n3 are at least one selected from the group made of + and &#x2212;, or at least two selected from the group made of 0, +, and &#x2212;. By using this ceramic composition, a novel ceramic composition having a high relative dielectric constant can be obtained.

Ceramic composition

The present invention aims to provide a piezoelectric composition and a piezoelectric element containing the piezoelectric composition. In the piezoelectric composition, the main component contains a substance represented by the following formula with a perovskite structure,(BiNa)(TiMgAlCo)O0.15&#x2266;x&#x2266;0.7, 0.28&#x2266;y&#x2266;0.75, 0.02&#x2266;z&#x2266;0.30, 0.17&#x2266;k&#x2266;0.83, 0.75&#x2266;m&#x2266;1.0, and x+y+z=1.

A piezoelectric device includes a first electrode film, a piezoelectric film disposed on the first electrode film, and a second electrode film disposed on the piezoelectric film. At least one of the first and second electrode films is composed of an alloy, and a main component of the alloy is a metal selected from the group consisting of Ti, Al, Mg, and Zn. The piezoelectric film has a main composition represented by (KNaLiBaSr)(NbTaZr)O(1), where x, y, z, w, v, u, and m in formula (1) satisfy 0.4&#x3c;x&#x2266;0.7, 0.02&#x2266;y&#x2266;0.11, 0.5&#x2266;x+y&#x3c;0.75, 0&#x3c;z&#x2266;0.28, 0&#x3c;w&#x2266;0.02, 0.02&#x2266;v&#x2266;0.11, 0.02&#x2266;u&#x2266;0.11, and 0.95&#x2266;m&#x3c;1.2, and contains 1% by mass or less of MnO relative to the main composition.

Piezoelectric device

A piezoelectric compound having no occurrence of segregation or uneven structures as well as a piezoelectric element having excellent piezoelectric properties. The piezoelectric composition includes a main component that is a perovskite-typed oxide represented by formula of ABO, wherein, one site includes Bi, Na, and another site includes Ti, and part of the Ti is substituted by transition metal element Me (Me is at least one element selected from the group consisting of Mn, Cr, Fe and Co), according to the conversion of BiMeO, the content ratio of Bi and the transition metal element Me accounts for 6&#x2dc;43 mol % relative to the whole perovskite-typed oxides as the main component.

A thin film magnetic device is provided, in which magnetic permeability in a high frequency range can be easily improved. Scratch-like grooves extending along an extending direction of a coil (for example, a Y-axis direction being an extending direction of a second coil part) are formed at least one side of a surface and a back of each of a lower magnetic film and an upper magnetic film. A magnetization direction of anisotropic magnetization is controlled in each of formation areas of the scratch-like grooves (formation areas of lower magnetic films and upper magnetic films), and therefore displacement (rotation) of the magnetization direction of the anisotropic magnetization is pinned by the scratch-like grooves. Consequently, certain magnetic permeability is kept even in a high frequency range. Moreover, such formation of the scratch-like grooves may not cause complexity in manufacturing process.

Thin film magnetic device and method of manufacturing the same

The present invention provides a thin film magnetic device realizing effective improvement in magnetic permeability in a high frequency area. The thin film magnetic device includes a thin film coil and a plurality of strip-shaped magnetic films disposed along a plane in which the thin film coil extends. The plurality of strip-shaped magnetic films are disposed to extend in one direction only in a pair of areas facing each other. The pair of areas is selected from four areas obtained by dividing, in the winding direction, the area where the thin film coil extends.

Thin film magnetic device having strip-shaped magnetic films with their magnetization easy axes arranged orthogonal to a thin film coil and method of manufacturing the same

The present invention provides a thin film device in which resin film does not easily separate. In a thin film device, a conductor pattern is formed on one of the main surfaces of a plate-shaped base, and the conductor pattern is covered with a resin film. This conductor pattern has a bottom face disposed on the main surface of the base, a top face that faces the bottom face and is distant from the main surface of the base, and two side faces that connect the bottom face and the top face. A depressed portion is formed in these side faces, and an insulation film extends into the depressed portion.

Growing community of inventors

Tokyo, Japan

Taku Masai