Murata Manufacturing Co., Ltd.

Taku Kikuchi

Daisuke Sekiya

Hisashi Yamazaki

Koichiro Kawasaki

Masashi Tsubokawa

Akira Michigami

Mitsuyoshi Hira

Hideaki Takahashi

Masahiro Fukushima

Hiroshi Tanaka

Yuji Miwa

Masakazu Mimura

Motoji Tsuda

Junpei Yasuda

Yasumasa Taniguchi

Ryo Nakagawa

Seiji Kai

Takashi Kitahara

Yasuhiko Hirano

Chihiro Konoma

Shin Saijo

Daisuke Fukuda

Hijiri Sumii

Osamu Shimono

Hiroki Noto

Naoki Daimon

A surface acoustic wave device includes a piezoelectric substrate including principal surfaces and an IDT electrode on a first principal surface side of the principal surfaces, and the first principal surface is a polarization positive potential surface of the piezoelectric substrate.

Surface acoustic wave device

An elastic wave filter apparatus includes at least one excitation electrode, a first electrode land, and second electrode lands provided on a first main surface of a device substrate including a piezoelectric layer. A signal terminal and metal members are provided on a second main surface of the device substrate. The first electrode land and the signal terminal are connected to a signal potential, and the second electrode lands and the metal members are connected to a ground potential. A first connection electrode connects the first electrode land and the signal terminal, and a second connection electrode connects at least one of the second electrode lands and at least one of the metal members. The at least one metal member connected to the second connection electrode overlaps at least a portion of the at least one excitation electrode across the device substrate.

Elastic wave filter apparatus

An elastic wave device includes a piezoelectric substrate including first and second primary surfaces opposing one another, a via electrode extending through the piezoelectric substrate, and a wiring electrode on the first primary surface of the piezoelectric substrate. The via electrode is connected at one end to the wiring electrode, and the via electrode includes a locking section at the one end, on the wiring electrode side. The locking section extends on the first primary surface of the piezoelectric substrate.

Elastic wave device

An elastic wave device includes first and second IDT electrodes provided over a principal surface of a piezoelectric substrate. The first IDT electrode is provided directly on a principal surface of the piezoelectric substrate and the second IDT electrode is provided over the principal surface with a first dielectric layer interposed therebetween. A second dielectric layer extends to upper portions of the first and second IDT electrodes. A wiring electrode passes over the second dielectric layer and extends to the upper portions of the first and second IDT electrodes. Respective angles between first and second side surfaces of the second dielectric layer and the principal surface of the piezoelectric substrate are smaller than an angle between a side surface of the first dielectric layer and the principal surface of the piezoelectric substrate.

Elastic wave device, high-frequency front end circuit, and communication device

An elastic wave device includes an interdigital transducer electrode and a wiring electrode made of metal and provided on a first main surface of a piezoelectric substrate. Via hole electrodes penetrate the piezoelectric substrate. Each via hole electrode is connected to an external connection terminal. A cover member defines a hollow space in which the interdigital transducer electrode is sealed, together with the first main surface of the piezoelectric substrate. A heat dissipating member is provided on the wiring electrode to extend from the wiring electrode toward the cover member and penetrate the cover member.

Elastic wave device and manufacturing method therefor

An acoustic wave device includes a piezoelectric substrate including an electrode formation surface, and an IDT electrode provided on the electrode formation surface. The IDT electrode includes a close contact layer located on the electrode formation surface, and a main electrode layer located on the close contact layer. The close contact layer includes first and second layers that respectively include first and second lateral surfaces. An area of a surface of the second layer that is in close contact with the main electrode layer is smaller than an area of a surface of the first layer that is in close contact with the piezoelectric substrate. An inclination angle of the second lateral surface is smaller than an inclination angle of the first lateral surface.

Acoustic wave device and manufacturing method for same

An elastic wave device includes a piezoelectric substrate, functional electrodes on the piezoelectric substrate, a support layer on the piezoelectric substrate with a frame shape surrounding the functional electrodes, a cover member on the support layer to seal an opening of the support layer, the cover member including a first main surface facing the support layer, and a second main surface opposite to the first main surface. Recesses are located in the cover member and are open to the second main surface. Via holes extend through the support layer and to bottom surfaces of the recesses of the cover member, the via holes each including an opening that is open to the bottom surface. The area of the opening of each of the via holes is not more than the area of the bottom surface of the corresponding recess of the cover member. First via conductor portions are provided in the via holes and second via conductor portions are provided in the recesses of the cover member.

Elastic wave device and method for manufacturing the same

An electronic component includes a functional electrode provided on a first substrate that has a rectangular or substantially rectangular plate shape and a support layer including resin that surrounds the functional electrode. A cover member closes an opening of the support layer. A via conductor penetrating the support layer is provided in at least one corner portion of the support layer. A resin reinforcing portion having the same height or substantially the same height as the support layer is provided in an outer side portion of the corner portion provided with the via conductor.

Electronic component and manufacturing method therefor

An elastic wave device includes IDT electrodes on a first main surface of a piezoelectric substrate and a heat dissipating film on a second main surface and including a pair of opposing main surfaces and side surfaces connecting the pair of main surfaces. At least a portion of the side surfaces of the heat dissipating film is located in an inner side portion relative to the outer circumference of the second main surface of the piezoelectric substrate on an arbitrary cross section along a direction connecting the pair of main surfaces of the heat dissipating film.

An elastic wave device includes interdigital transducer electrodes on a piezoelectric substrate and wires electrically connected to the interdigital transducer electrodes. The wires include a first wire and a second wire. The device further includes an interlayer insulating film made from an inorganic dielectric material and covering a portion of the first wire. A portion of the second wire bridges a portion of the first wire with the interlayer insulating film provided therebetween. In a region, in a bridged area, where the second wire extends from a region on an outer side portion of the interlayer insulating film to above the interlayer insulating film, first auxiliary wire electrodes are provided on the piezoelectric substrate, such that when viewed in plan view, the first auxiliary wire electrodes at least partially overlap with the second wire and extend to within the interlayer insulating film.

Elastic wave device and manufacturing method thereof

In an elastic wave filter apparatus, IDT electrodes and first and second electrode lands are provided on a first main surface of a piezoelectric substrate. The piezoelectric substrate, a supporting layer, and a covering member define a hollow portion. A signal terminal, a ground terminal, and a heat diffusion layer are provided on a second main surface of the piezoelectric substrate. The first and second electrode lands are electrically connected by first and second connection electrodes to the signal terminal and the ground terminal, respectively. The heat diffusion layer is provided at a position where the heat diffusion layer overlaps at least a portion of the IDT electrodes across the piezoelectric substrate.

In an elastic wave device, IDT electrodes on a piezoelectric substrate are electrically connected to wiring electrodes. A support member covers at least portions of the wiring electrodes. Through-holes in the support member expose upper surfaces of the wiring electrodes and have conductive layers filled therein. The wiring electrodes each have a multilayer structure in which a refractory metal film having a melting point of 900&#xb0; C. or higher, a diffusion preventive film, and an Al or Al-alloy film are laminated successively from the upper surface side.

Elastic wave device and manufacturing method for same

An elastic wave device includes a multilayer film provided on a support substrate and including a piezoelectric thin film and a layer other than the piezoelectric thin film, an interdigital transducer electrode provided on one surface of the piezoelectric thin film, and an external connection terminal electrically connected to the interdigital transducer electrode. In a plan view, the multilayer film is partially absent or omitted in a region outside a region where the interdigital transducer electrode is provided, and the elastic wave device further includes a first insulating layer provided on the support substrate in at least a portion of a region where the multilayer film is absent or omitted.

An electronic component includes an electronic component element including first and second main surfaces, a heat-dissipation accelerating member on the first main surface, a sealing resin layer sealing the electronic component element, and a shielding member provided on the sealing resin layer and electrically connected to the heat-dissipation accelerating member. The heat-dissipation accelerating member includes fourth and fifth main surfaces. The electronic component includes a connecting member disposed on the fifth main surface of the heat-dissipation accelerating member and electrically connecting at least one portion of the heat-dissipation accelerating member and the shielding member. The connecting member has a higher thermal conductivity than the sealing resin layer. The contact area between the heat-dissipation accelerating member and the connecting member is smaller than the area of the fifth main surface.

An elastic wave device includes a piezoelectric substrate, an IDT electrode, wiring, a pad, an under bump metal, a first dielectric layer, and a second dielectric layer. At least a portion of the IDT electrode includes a first electrically conductive film, at least a portion of the wiring includes a multilayer body including the first electrically conductive film and a second electrically conductive film, and at least a portion of the pad includes the second electrically conductive film. The second dielectric layer covers the region other than the contact region between the second electrically conductive film and the under bump metal. Consequently, the second electrically conductive film is covered with the second dielectric layer and the under bump metal and is not exposed to air.

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Nagaokakyo, Japan

Taku Kikuchi