Hitachi High-Tech Corporation

Hitachi-High-Technologies Corporation

Hitachi-Johnson Controls Air Conditioning, Inc.

Taku Iwase

Masahito Mori

Takao Arase

Kenetsu Yokogawa

Masakazu Isozaki

Hayato Watanabe

Satoshi Terakura

Yoko Sato

Naoyuki Kofuji

Tomohiko Sato

Yasushi Sonoda

Kunihito Kawamura

Kazuumi Tanaka

Naoyuki Fushimi

Koutarou Nomura

Shinji Nakahata

Yusuke Nakatani

Masahiro Yamaoka

Junichi Sayama

In order to be able to independently control a plasma density distribution both in a distribution with high center and a nodal distribution, and perform a plasma processing on a sample with higher accuracy for processing uniformity, a plasma processing apparatus includes: a vacuum vessel in which a plasma processing is performed on a sample; a radio frequency power source configured to supply radio frequency power for generating plasma; a sample stage on which the sample is placed; and a magnetic field forming unit configured to form a magnetic field inside the vacuum vessel and disposed outside the vacuum vessel, in which the magnetic field forming unit includes: a first coil; a second coil that is disposed closer to an inner side than the first coil and has a diameter smaller than a diameter of the first coil; a first yoke that covers the first coil, and an upper side and a side surface of the vacuum vessel, and in which the first coil is disposed; and a second yoke that covers the second coil along a peripheral direction of the second coil and has an opening below the second coil.

Plasma processing apparatus

Ion shield plate for plasma processing apparatus

In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.

Plasma processing apparatus and plasma processing method

Provided is an indoor unit of an air-conditioner including: an indoor unit body configured to be provided in a ceiling; a suction port attached to a lower surface of the indoor unit body; a panel including a blow port for blowing conditioned air into a room; and a louver provided at the blow port of the panel to change an air sending direction. The panel includes an outer frame provided outside the blow port and provided with a substantially horizontal flat portion, and a protruding portion provided on the flat portion of the outer frame and protruding vertically downward. A lower end of the protruding portion is positioned vertically above a lower end of the louver. A lower end of an inner flow path wall surface forming a flow path wall surface inside the blow port is positioned vertically below the lower end of the louver.

Indoor unit of air-conditioner

A plasma processing apparatus includes a sample stage on which a sample is placed an inside of the processing chamber; a dielectric membrane forming an upper surface portion of the sample stage; a plurality of film-shaped electrodes which is disposed in the dielectric membrane, to which a DC power from a DC power supply is supplied and in which an electrostatic force for attracting the sample is formed; and a bias electrode (ESC base metal) disposed below the dielectric membrane and supplied with radio frequency power for forming a radio frequency bias potential from a radio frequency power supply during the processing of the sample. The plurality of electrodes includes a first electrode to which a positive polarity is imparted and a second electrode to which a negative polarity is imparted, wherein the first electrode and the second electrode are electrically connected to a corresponding positive electrode terminal and a corresponding negative electrode terminal of the DC power supply through the corresponding low pass filter circuits (LPF).

Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.

Ring for a plasma processing apparatus

The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing. In the present invention, in a plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film containing boron, the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.

Plasma processing method and plasma processing apparatus

A plasma processing method for plasma-etching a sample in a metallic processing chamber includes etching the sample with a plasma; plasma-cleaning the processing chamber with a fluorine-containing gas after etching the sample; and plasma-processing the processing chamber with a gas containing sulfur and oxygen after plasma cleaning the processing chamber.

Plasma processing method

Growing community of inventors

Tokyo, Japan

Taku Iwase