Samsung Electronics Co., Ltd.

Takkyun Ro

Yong Wan Jin

Kyung Bae Park

Chul Joon Heo

Sung Young Yun

Kwang Hee Lee

Dong-Seok Leem

Gae Hwang Lee

Moon Gyu Han

Seon-Jeong Lim

Tadao Yagi

Kiyohiko Tsutsumi

Yeong Suk Choi

Ohkyu Kwon

Hyesung Choi

Dongseon Lee

Youn Hee Lim

Ryuichi Satoh

Chui Joon Heo

Wenxu Xianyu

Kyu Sik Kim

Taejin Choi

Norihito Ishii

Bum Woo Park

Sung Heo

Sang Mo Kim

Katsunori Shibata

Jong Won Choi

Chul-Joon Heo

Sakurai Rie

Yagi Tadao

Yongsung Kim

Changseung Lee

Xavier Bulliard

Hiromasa Shibuya

Hwang Suk Kim

Rie Sakurai

Eunae Cho

Bonwon Koo

Takao Motoyama

Gyeongsu Park

Yongsu Kim

Dongjin Yun

Joo Ho Lee

Yeon-Hee Kim

Kyungbae Park

Chuljoon Heo

Seong Heon Kim

Yong-Young Park

Se Hyuck Park

Hye Sung Choi

Nam Jeong Kim

A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λ) of the first photoelectric conversion layer and a peak absorption wavelength (λ) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

Photoelectric devices and image sensors and electronic devices

A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, X, X, Y, Y, Ar, Ar, and Arare the same as defined in the detailed description.

Near-infrared absorbers, near-infrared absorbing/blocking films, photoelectric devices, organic sensors, and electronic devices

Disclosed is a non-invasive biometric sensor including a light source, an organic photodetector, and a detector. The light source is configured to irradiate light in a desired (and/or alternatively predetermined) wavelength range to a body part. The organic photodetector is configured to sense the light in the desired (and/or alternatively predetermined) wavelength range in response to the light in the desired (and/or alternatively predetermined) range being transmitted through the body part. The detector is configured to determine biomedical information of the body part based on an amount of the light sensed by the organic photodetector.

Non-invasive biometric sensor based on organic photodetector

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed:  In Chemical Formula 1, each substituent is the same as described in the detailed description.

Compound and organic photoelectric device, image sensor and electronic device including the same

Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same.(&#xb0; C.)&#x2212;(&#xb0; C.)&#x2265;(&#xb0; C.)&#x2212;(&#xb0; C.)&#x2003;&#x2003;[Relationship Equation 1]

Organic photoelectric device and image sensor and electronic device

A pulse oximeter may include a photoelectric conversion device having wavelength selectivity so that a low output LED may be included in the pulse oximeter to prevent skin damage and to reduce power consumption. The pulse oximeter includes a light emitting device configured to emit white light and a sensor configured to detect transmitted light that is received from the light emitting device. The sensor includes a near infrared organic photoelectric conversion device configured to sense a particular near infrared wavelength spectrum of light and a red photoelectric conversion device configured to sense a particular red wavelength spectrum of light.

Pulse oximeters and pulse oximeter embedded organic image sensors

An electronic device includes a plurality of pixel electrodes, an active layer on the plurality of pixel electrodes, an opposed electrode on the active layer and covering an entirety of an upper surface of the active layer, and a first encapsulation film on the opposed electrode wherein the opposed electrode and the first encapsulation film have a common planar shapes.

Electronic devices and methods of manufacturing the same

An organic photoelectronic device includes a first electrode and a second electrode facing each other, and first and second photoelectronic conversion layers between the first electrode and the second electrode. The first and second photoelectronic conversion layers include a p-type semiconductor and an n-type semiconductor. The first photoelectronic conversion layer has a first composition ratio (p/n) of the p-type semiconductor relative to the n-type semiconductor, the second photoelectronic conversion layer has a second composition ratio (p/n) of the p-type semiconductor relative to the n-type semiconductor, and the first composition ratio (p/n) is greater than the second composition ratio (p/n).

Organic photoelectronic device and image sensor and electronic device

A photoelectric diode includes a first electrode and a second electrode facing each other; a photoelectric conversion layer between the first electrode and the second electrode, and a compensation layer on the photoelectric conversion layer, the compensation layer being configured to compensate absorption and reflection of light. The photoelectric conversion layer is associated with a first optical spectrum having a light-absorption peak at a first wavelength and a reflection peak at a second wavelength, the first wavelength and the second wavelength both within a wavelength region of about 750 nm to about 1200 nm. The photoelectric diode is associated with a second optical spectrum having a light-absorption peak at a third wavelength, the third wavelength is within the wavelength region of about 750 nm to about 1200 nm, the third wavelength different from the first wavelength.

Photoelectric diodes including photoelectric conversion layer and compensation later, and organic sensors and electronic devices including same

A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (&#x3bb;) of the first photoelectric conversion layer and a peak absorption wavelength (&#x3bb;) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

Disclosed is an optoelectronic device including a first electrode and a second electrode facing each other; a metal layer pattern disposed between the first electrode and the second electrode; a buffer layer covering the metal layer pattern; and a photoelectric conversion layer on the buffer layer. The metal layer pattern includes a metal having a negative dielectric constant and the buffer layer includes a compound selected from silicon nitride (SiN, 0&#x3c;x&#x3c;1), silicon oxynitride (SiON, 0&#x3c;y&#x3c;0.5, 0&#x3c;z&#x2264;1), P-doped silicon oxynitride (SiON:P, 0&#x3c;y&#x3c;0.5, 0&#x3c;z&#x2264;1), and a combination thereof.

Optoelectronic device including a metal layer pattern including a metal having a negative dielectric constant and image sensor and electronic device including the same

Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same.(&#xb0; C.)&#x2212;(&#xb0; C.)&#x2265;(&#xb0; C.)&#x2212;(&#xb0; C.) &#x2003;&#x2003;[Relationship Equation 1]

An optoelectronic diode may include a first electrode, a second electrode, a third electrode, a first active layer between the first and second electrodes, and a second active layer between the second and third electrodes. Two of the electrodes may be electrically connected to each other and may have different resistances. The first and second active layers may be isolated from each other. The first active layer, the first electrode, and the second electrode may form a diode, and the second active layer, the second electrode, and the third electrode may form a diode. The second electrode may have a refractive index different from a refractive index of the second active layer.

Optoelectronic diodes and electronic devices including same

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Hwaseong-si, South Korea

Takkyun Ro