Tokyo Ohka Kogyo Co., Ltd.

Takeyoshi Mimura

Kazuyuki Nitta

Jun Iwashita

Satoshi Shimatani

Tatsuya Matsumi

Waki Okubo

Yoshiyuki Utsumi

Akiya Kawaue

Yoshitaka Komuro

Takehiro Seshimo

Daichi Takaki

Makiko Irie

Ryoichi Takasu

The present invention provides a positive resist composition capable of forming a resist pattern with high resolution, and a method of forming a resist pattern. This composition is a positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid, and an acid-generator component (B) which generates acid upon irradiation, the resin component (A) containing a polymer including: a core portion represented by general formula (1)[Chemical Formula 1]PX&#x2014;Y)&#x2003;&#x2003;(1)wherein P represents an a-valent organic group; a represents an integer of 2 to 20; Y represents an arylene group or an alkylene group of 1 to 12 carbon atoms; and X represents a specific linking group which can be cleaved under action of acid, and arm portions that are bonded to the core portion and are also composed of a polymer chain obtained by an anionic polymerization method.

Positive resist composition and method of forming resist pattern

A positive resist composition including a base component (A') which exhibits increased solubility in an alkali developing solution under action of acid and generates acid upon exposure, the base component (A&#x2032;) including a polymeric compound (A1&#x2032;) having a structural unit (a5-1) represented by general formula (a5-1), a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a0-2) that generates acid upon exposure, the structural unit (a0-2) containing a group represented by general formula (a0-2&#x2032;) (wherein Xrepresents an anion moiety represented by one of general formulas (1) to (5)). 

Positive resist composition, method of forming resist pattern, and polymeric compound

Provided are a novel positive resist composition that includes a low molecular weight material as a base material component, and a method of forming a resist pattern using the positive resist composition. A positive resist composition including: a base material component (A) that exhibits increased solubility in an alkali developing solution under the action of acid; and an acid generator component (B) that generates acid upon exposure, wherein the base material component (A) comprises a compound (A1) in which either a portion of, or all of, the hydrogen atoms of hydroxyl groups (&#x2014;OH) within a phenolic compound (I) described below have been substituted with a group containing an acid dissociable, dissolution inhibiting group:

A positive resist composition including a base material component (A) that exhibits increased solubility in an alkali developing solution under action of an acid; and an acid generator component (B) that generates an acid upon exposure, wherein the base material component (A) includes a polymeric compound (A1) having a structural unit (a10) derived from hydroxystyrene and a structural unit (a11) represented by general formula (a11-1) shown below: 

A positive resist composition including a resin component (A) and an acid-generator component (B), the resin component (A) including a structural unit (a1) derived from hydroxystyrene, and a structural unit (a2) having an acetal-type acid dissociable dissolution inhibiting group, and the acid-generator component (B) including an acid generator (B1-i) having at least one anion moiety selected from the group consisting of anion moieties represented by general formula (b-3), (b-4), and (b-5), an acid generator (B1-ii) having an anion moiety represented by general formula (b-6) shown below, or an acid generator (B1-iii) having a cation moiety represented by general formula (b'-3) shown below: wherein X&#x2033; represents an alkylene group of 2 to 6 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; Y&#x2033; and Z&#x2033;, U&#x2033;, V&#x2033;, and W&#x2033; each independently represents an alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom,[Chemical Formula 2]R&#x2014;SO&#x2003;&#x2003;(b-6)wherein R&#x2033; represents a hydrocarbon group which may or may not have a substituent, wherein R&#x2033; to R&#x2033; each independently represents a phenyl group or naphthyl group that may or may not have a substituent; with the proviso that the case where all of R&#x2033; to R&#x2033; represent phenyl groups which do not have a substituent is excluded.

The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl group is eliminated by an action of an acid, in place of the component (A).

Chemical amplification type positive resist composition, resist laminated material, resist pattern forming method and method of manufacturing semiconductor device

Positive resist composition of chemical amplification type, resist coated material, method of forming resist pattern, and process for producing semiconductor device

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Kawasaki, Japan

Takeyoshi Mimura