Semiconductor Energy Laboratory Co., Ltd.

Takeya Hirose

Takayuki Ikeda

Seiichi Yoneda

Shunpei Yamazaki

Hisao Ikeda

Hidetomo Kobayashi

Daiki Nakamura

Ryo Hatsumi

Yusuke Negoro

Kiyotaka Kimura

Hideaki Shishido

Hiroki Inoue

Yosuke Tsukamoto

Shunsuke Sato

Shuichi Katsui

Hajime Kimura

Kei Takahashi

Takeshi Osada

Takashi Nakagawa

Takahiro Fukutome

A thin optical device having high light utilization efficiency and less chromatic aberration and a small electronic device including the optical device are provided. The thin optical device includes a first reflective polarizing plate, a lens, an optical rotator, a retardation plate, and a second reflective polarizing plate. The optical device can be a thin optical device by rotation of the polarization plane of linearly polarized light with the optical rotator and utilization of a property of selectively reflecting circularly polarized light of the second reflective polarizing plate. Furthermore, the optical device does not use a half mirror and thus has a property of high light utilization efficiency. When the second reflective polarizing plate has a layered structure, chromatic aberration of an optical system can be reduced.

Optical device and electronic device

A display apparatus with high display quality is provided. A high-resolution display apparatus is provided. The display apparatus includes a plurality of pixels, and the pixels each include a light-emitting device, a first transistor, a second transistor, a third transistor, a fourth transistor, and a first capacitor. One electrode of the light-emitting device is electrically connected to one of a source and a drain of the first transistor, one of a source and a drain of the second transistor, and one electrode of the first capacitor. A gate of the second transistor is electrically connected to the other electrode of the first capacitor, one of a source and a drain of the third transistor, and one of a source and a drain of the fourth transistor. One frame period of each of the pixels includes a period in which the first transistor and the fourth transistor are each in a conduction state.

Display apparatus and electronic device comprising first capacitor and second capacitor

A display device having an image capturing function is provided. The display device includes a first pixel and a second pixel. The first pixel includes a light-emitting device. The second pixel includes a light-receiving device and a lens. The light-emitting device and the light-receiving device share an electrode. The lens and the light-receiving device include a region overlapping with each other. The width of the lens is greater than the width of a light-receiving portion of the light-receiving device. The cross-sectional shape of the lens in a thickness direction including an optical axis is a substantial trapezoid. The surface including a leg of the substantially trapezoidal shape has a convex shape. The surface including an upper base of the substantially trapezoidal shape and the light-receiving portion are provided to face each other. The first pixel and the second pixel are provided to be adjacent to each other.

Display device and electronic device

An imaging device having a function of processing an image is provided. The imaging device has an additional function such as image processing, can hold analog data obtained by an image capturing operation in a pixel, and can extract data obtained by multiplying the analog data by a predetermined weight coefficient. Difference data between adjacent light-receiving devices can be obtained in a pixel, and data on luminance gradient can be obtained. When the data is taken in a neural network or the like, inference of distance data or the like can be performed. Since enormous volume of image data in the state of analog data can be held in pixels, processing can be performed efficiently.

Imaging device and electronic device

An imaging device that has an image processing function and is capable of a high-speed operation is provided. The imaging device has an additional function such as image processing, and can retain analog data obtained by an image capturing operation in pixels and extract data obtained by multiplying the analog data by a given weight coefficient. In the imaging device, the data is stored in a memory cell and pooling processing of data stored in a plurality of memory cells can be performed. The pixels are provided so as to have a region overlapping with at least one of the memory cells, a pooling processing circuit, and a reading circuit of the pixels; thus, an increase in the area of the imaging device can be inhibited even with an additional function.

A semiconductor device with low power consumption can be provided. The semiconductor device includes a differential circuit and a latch circuit, the differential circuit includes a transistor including an oxide semiconductor in a channel formation region, and the latch circuit includes a transistor including a single semiconductor or a compound semiconductor in a channel formation region. The differential circuit and the latch circuit include an overlap region.

Semiconductor device

An imaging device that has an image processing function and is capable of operating at high speed is provided. The imaging device has an additional function such as image processing, image data obtained by an imaging operation is binarized in a pixel unit, and a product-sum operation is performed using the binarized data. A memory circuit is provided in the pixel unit and retains a weight coefficient used for the product-sum operation. Thus, an arithmetic operation can be performed without the weight coefficient read from the outside every time, whereby power consumption can be reduced. Furthermore, a pixel circuit, a memory circuit, and the like and a product-sum operation circuit and the like are stacked, so that the lengths of wirings between the circuits can be reduced, and high-speed operation with low power consumption can be performed.

A semiconductor device capable of holding analog data is provided. Two holding circuits, two bootstrap circuits, and one source follower circuit are formed with use of four transistors and two capacitors. A memory node is provided in each of the two holding circuits; a data potential is written to one of the memory nodes and a reference potential is written to the other of the memory nodes. At the time of data reading, the potential of the one memory node is increased in one of the bootstrap circuits, and the potential of the other memory node is increased in the other of the bootstrap circuits. A potential difference between the two memory nodes is output by the source follower circuit. With use of the source follower circuit, the output impedance can be reduced.

Semiconductor device using transistors having low off-state current

An optical device with less influence of stray light is provided. The optical device is thin and includes a half mirror, a first lens, a retardation plate, a reflective polarizing plate, and a second lens. In the optical device, a geometric phase lens which has negative and positive refractive power is used as the first lens, whereby images can be focused after magnified optically. Thus, the optical device can have a wide viewing angle. In the case where stray light occurs due to birefringence of an optical material, negative refractive power of the first lens can prevent the stray light from being focused on the eye direction. Accordingly, image degradation recognized due to stray light can be prevented.

A semiconductor device with a novel structure is provided. The semiconductor device includes a mixer circuit including a digital-analog converter circuit, a control circuit for controlling the digital-analog converter circuit, a power source control switch, and a plurality of Gilbert circuits. The plurality of Gilbert circuits each include an analog potential holding circuit for holding an analog potential output from the digital-analog converter circuit. The control circuit has a function of outputting a signal for controlling the analog potential holding circuit and the digital-analog converter circuit. The power source control switch has a function of stopping supply of a power source voltage to the control circuit in a period during which the analog potential held in the analog potential holding circuit is not updated. The analog potential holding circuit includes a first transistor. The first transistor includes a semiconductor layer including an oxide semiconductor in a channel formation region.

To provide an inexpensive display device. The display device includes a pixel and an IC chip. The pixel includes a first pixel circuit including a display element and a second pixel circuit including a light-receiving device. The one IC chip includes a control circuit, a data driver circuit, and a read circuit. The first and second pixel circuits are electrically connected to the read circuit. The control circuit has a function of controlling driving of the data driver circuit and the read circuit. The data driver circuit has a function of supplying image data to the first pixel circuit. The read circuit has a function of outputting a monitor signal corresponding to a monitor current when the monitor current flows through the first pixel circuit. The read circuit also has a function of outputting an imaging signal corresponding to imaging data acquired by the second pixel circuit.

Display device

Provided is a semiconductor device that does not require an A/D converter circuit and is capable of performing sound source separation without converting an analog signal. The semiconductor device includes a plurality of microphones, a plurality of delay circuits, and a signal processing circuit. The plurality of microphones are electrically connected to the respective delay circuits, and output signals of the plurality of delay circuits are input to the signal processing circuit. The delay circuit includes a plurality of signal retention circuits capable of retaining an analog potential, and has functions of retaining an electric signal output from the microphone as a discrete analog signal in the signal retention circuits and outputting the signal at a time different from the time when the microphone outputs the signal. The signal processing circuit has a function of adding the output signals of the plurality of delay circuits.

Sound source separation device, semiconductor device, and electronic device

A semiconductor device with a novel structure which can identify the sound source is provided. The semiconductor device includes a microphone array, delay circuits, and a signal processing circuit. The delay circuit includes a first selection circuit, which selects a microphone, signal retention circuits, which retain voltages depending on the sound signal, and a second selection circuit, which selects a signal retention circuit. Each signal retention circuit includes a transistor which includes a semiconductor layer including an oxide semiconductor in its channel formation region. The first selection circuit writes the voltage of discreet sound signals to the signal retention circuit. The second selection circuit selects at different timings the voltages which are retained in the signal retention circuit and generates the output signal corresponding to the delayed sound signal.

Variations in a receiving circuit employing differential signaling are reduced. The receiving circuit converts a first signal and a second signal which are supplied through differential signaling into a third signal which is a single-ended signal and outputs the third signal. The receiving circuit includes an operational amplifier, a first element, a first transistor, and a first circuit. The first element is connected to the first circuit through a first node to which the first transistor is connected. The first signal and the second signal that is the inverse of the first signal are supplied to the operational amplifier. The operational amplifier supplies an output signal to the first element, and a first preset potential is supplied to the first node through the first transistor. A signal including variations of the operational amplifier is stored in the first element in accordance with the first preset potential. The first circuit that is supplied with the first preset potential determines an initial value of the third signal without being influenced by the signal including variations of the operational amplifier.

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Atsugi, Japan

Takeya Hirose