Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Takeya Fujino

Junichi Shimada

Fumihiro Kimura

Nobuyuki Iwauchi

Tsutomu Fujii

Takuya Yasui

Yoichi Matsumura

Hiromasa Fukazawa

Hidenori Shibata

Yukiji Hashimoto

Hirofumi Taguchi

Takako Ohashi

Takayuki Araki

Disclosed is a semiconductor device having a multilayer wiring structure, in which a dummy pattern is formed in a wiring void with favorable manufacturing efficiency. In a semiconductor device having a multilayer wiring structure, dummy pattern () is formed in relatively narrow wiring void (Area_S) so as to extend in a direction different from that of dummy patterns () formed in relatively wide wiring void (Area_S).

Semiconductor device

A semiconductor device including a plurality of cells having an antenna protection element and a cell other than the antenna protection element; and a first dummy pattern and a second dummy pattern arranged in a layer above the plurality of cells. Further, the first dummy pattern overlaps with the antenna protection element, the second dummy pattern overlaps with the cell other than the antenna protection element, and a first layout rule of the first dummy pattern is different from a second layout rule of the second dummy pattern.

Semiconductor device and semiconductor device layout designing method

Prevention of coming off of the layer where the contacts are formed and the isolating film and breakage of the LSI is realized. To do this, a contact array is provided in which a plurality of contacts is formed so as to be aligned in the vertical and the horizontal directions. In the contact array, the contact formation spacing in both of the vertical and the horizontal directions is larger than the contact formation spacing determined by the manufacturing process. Consequently, the number of contacts formed in the contact array can be reduced to not more than the number of contacts that can be formed in the unit area determined by the process, so that prevention of coming off of the layer where the contacts are formed and the isolating film and breakage of the LSI can be realized.

Semiconductor integrated circuit and method of manufacturing the same

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Osaka, Japan

Takeya Fujino