Rohm Co., Ltd.

Taketoshi Tanaka

Norikazu Ito

Minoru Akutsu

Shinya Takado

Kosei Osada

Kuniyoshi Okamoto

Masahiko Arimura

Ken Nakahara

Hirotaka Otake

Kentaro Chikamatsu

Hiroaki Ohta

Masashi Kubota

Ryosuke Ishido

A nitride semiconductor device includes an electron transit layer, an electron supply layer that is formed on the electron transit layer, a gate layer that is formed on the electron supply layer and contains an AlGaN (0<X<1) based material containing a first impurity, a gate electrode that is formed on the gate layer and is in Schottky junction with the gate layer, and a source electrode and a drain electrode that are electrically connected to the electron supply layer. By this arrangement, a gate withstand voltage can be improved and therefore, a nitride semiconductor device of high reliability can be provided.

Nitride semiconductor device

An electronic component includes an insulating layer, a low voltage conductor pattern formed inside the insulating layer, a high voltage conductor pattern formed inside the insulating layer such as to face the low voltage conductor pattern in an up/down direction, and a withstand voltage enhancement structure of conductive property formed inside the insulating layer and along the high voltage conductor pattern such as to protrude further outside than the low voltage conductor pattern in plan view.

Electronic component and electronic component module

A capacitor includes a substratethat has a first principal surface at one side and a second principal surface at another side, a plurality of first internal electrode forming penetrating holesthat penetrate through the substrate in a thickness direction, a plurality of second internal electrode forming penetrating holesthat penetrate through the substrate in the thickness direction, first internal electrodesthat are constituted of conductors embedded inside the first internal electrode forming penetrating holes, and second internal electrodesthat are constituted of conductors embedded inside the second internal electrode forming penetrating holes. The plurality of internal electrode forming penetrating holesandthat include the plurality of first internal electrode forming penetrating holesand the plurality of second internal electrode forming penetrating holesare disposed in a lattice in a plan view as viewed from a normal direction orthogonal to the first principal surface.

Capacitor and method for producing capacitor

A nitride semiconductor deviceincludes a first nitride semiconductor layerthat constitutes an electron transit layer, a second nitride semiconductor layerthat is formed on the first nitride semiconductor layer, is larger in bandgap than the first nitride semiconductor layer, and constitutes an electron supply layer, and a gate portionthat is formed on the second nitride semiconductor layer. The gate portionincludes a first semiconductor gate layerof a ridge shape that is disposed on the second nitride semiconductor layerand is constituted of a nitride semiconductor containing an acceptor type impurity, a second semiconductor gate layerthat is formed on the first semiconductor gate layerand is constituted of a nitride semiconductor with a larger bandgap than the first semiconductor gate layer, and a gate electrodethat is formed on the second semiconductor gate layerand is in Schottky junction with the second semiconductor gate layer

A semiconductor device () includes a substrate (), an electron transit layer () disposed on the substrate (), and an electron supply layer () disposed on the electron supply layer (). The electron transit layer () includes a conductive path forming layer () in contact with the electron supply layer (), a first semiconductor region (first nitride semiconductor layer) () containing an acceptor-type impurity, and a second semiconductor region (second nitride semiconductor layer) () disposed at a position closer to the conductive path forming layer () than the first semiconductor region () and containing an acceptor-type impurity. The first semiconductor region () has a higher acceptor density than the second semiconductor region ().

Semiconductor device

Provided is a nitride semiconductor deviceincluding a GaN electron transit layer, an AlGaN electron supply layerin contact with the electron transit layer, a gate layer, formed selectively on the electron supply layerand constituted of a nitride semiconductor composition effectively not containing an acceptor type impurity, and a gate electrode, formed on the gate layer, and satisfying the following formula (1):

Nitride semiconductor device and nitride semiconductor package

A nitride semiconductor device includes a first impurity layer made of an AlGaN (0&#x3c;X&#x2264;1) based material and containing a first impurity with which a depth of an acceptor level from a valence band (E-E) is made not less than 0.3 eV but less than 0.6 eV, an electron transit layer formed on the first impurity layer, an electron supply layer formed on the electron transit layer, agate electrode formed on the electron transit layer, and a source electrode and a drain electrode formed such that the source electrode and the drain electrode sandwich the gate electrode and electrically connected to the electron supply layer.

A nitride semiconductor deviceincludes a first nitride semiconductor layer, constituting an electron transit layer, a second nitride semiconductor layer, formed on the first nitride semiconductor layerand constituting an electron supply layer, a nitride semiconductor gate layer, disposed on the second nitride semiconductor layerand containing an acceptor type impurity, a metal film, formed on the nitride semiconductor gate layer, and a gate pad, connected to the metal filmvia a gate insulating filmhaving a first surface and a second surface, the first surface of the gate insulating filmis electrically connected directly or via a metal to the metal film, and the second surface of the gate insulating filmis electrically connected directly or via a metal to the gate pad

Provided is a nitride semiconductor deviceincluding a GaN electron transit layeran AlGaN electron supply layerin contact with the electron transit layera gate layerformed selectively on the electron supply layerand constituted of a nitride semiconductor composition effectively not containing an acceptor type impurity, and a gate electrodeformed on the gate leverand satisfying the following formula (1): 

A nitride semiconductor device includes: an electron transit layer including GaxIn1-xN (0&#x3c;x&#x2264;1); an electron supply layer formed on the electron transit layer and including AlyIn1-yN (0&#x3c;y&#x2264;1); a gate insulating film formed to pass through the electron supply layer to contact the electron transit layer; and a gate electrode facing the electron transit layer with the gate insulating film interposed therebetween, wherein, in the electron transit layer, a portion contacting the gate insulating film and a portion contacting the electron transit layer are flush with each other.

Nitride semiconductor device and method for manufacturing the same

A nitride semiconductor device includes a silicon substrate. A nitride semiconductor layer is formed over the silicon substrate. A gate electrode is formed over the nitride semiconductor layer so as to have a first ring-shaped portion and a second ring-shaped portion connected to the first ring-shaped portion. A first finger electrode is surrounded by the first ring-shaped portion. A second finger electrode is surrounded by the second ring-shaped portion. A third finger electrode is interposed between the first ring-shaped portion and the second ring-shaped portion.

Growing community of inventors

Kyoto, Japan

Taketoshi Tanaka