Fujitsu Corporation

Fujitsu Semiconductor Limited

Taketoshi Omata

Mitsuo Sakurai

Kazuhiko Takahashi

Tomoyuki Okada

Kazuya Sugawa

Takahisa Itoh

Kiyokazu Aiso

Masao Sugiyama

Tomoaki Kawaguchi

Kenji Chichii

Shuji Osada

Kazuhito Honma

A pattern data processing method comprising, obtaining pattern data on a mask pattern, determining whether a processing time for the mask pattern in a processing software is reduced by rotating the mask pattern by a predetermined angle than a case where the mask pattern is processed in the processing software without being rotated, obtaining pattern data on a rotated pattern formed by rotating the mask pattern by the predetermined angle in the case that the processing time is reduced, processing the pattern data on the rotated pattern by using the processing software, and causing the mask pattern to return to its original direction.

Pattern data processing system, pattern data processing method, and pattern data processing program

In a data storage method and device, input data having a pattern are divided into a plurality of fields. A first number of rectangles contained in each field of an original image of the pattern is calculated by dividing the field of the original image into one or plurality of rectangles. A second number of rectangles contained in each field of an inverted image of the pattern is calculated by dividing the field of the inverted image into one or plurality of rectangles. One of pattern data of the original image and pattern data of the inverted image which has a smaller number of rectangles is selected by comparing the first number of the rectangles in the original image with the second number of the rectangles in the inverted image. The pattern data selected for each field are stored in a recording medium.

Data storage method and data storage device

A method of generating an exposure pattern for lithography to create a plurality of patterns arranged in a predetermined direction, comprises a step of counting the plurality of patterns along this predetermined direction, and generating a first enlarged pattern by moving the edges to a first direction along the predetermined direction for a pattern with an odd number, and by moving the edges to a second direction, which is opposite to the first direction, for a pattern with an even number, and a step of generating a second enlarged pattern by moving the edges to the second direction for the pattern with an odd number, and by moving the edges to the first direction for the pattern with an even number. And the first and second patterns are used for creating the plurality of original patterns in a lithography step using the respective enlarged patterns.

Wavelength-independent exposure pattern generation method and exposure pattern generation system for lithography

There are independently made data of a device pattern, an identification and scribe pattern including a scribe pattern surrounding the device pattern, identification patterns formed in a scribe region indicated by the scribe pattern and outer periphery of the scribe region, and an outer peripheral pattern formed outside the scribe region except the identification pattern. From the data, data for an exposure system or a mask inspection apparatus are produced. The outer peripheral pattern is divided into a plurality of patterns each is a unit of a exposure region.

Method of manufacturing mask using independent pattern data files

Growing community of inventors

Kawasaki, Japan

Taketoshi Omata