Tokyo Shibaura Denki Kabushiki Kaisha

Taketoshi Kato

Hiroshi Morita

Akira Onoe

Hiroshi Washida

Hirotaka Nakano

A semiconductor device, for example a solar battery cell with a semiconductor element and a composite lead wire attached to the semiconductor element in which the lead wire includes a core and a cover overlying the core. The core has a lower thermal expansion coefficient than that of the semiconductor element, and the cover has a higher thermal expansion coefficient than that of the element and a higher electrical conductivity than that of the core. The lead wire therefore has substantially the same thermal expansion coefficient as that of the semiconductor element.

Semiconductor device with composite lead wire

A method of making a solar cell has the following steps: (1) Formation of a surface layer including a dopant on a silicon substrate wherein the surface layer has a higher laser absorption index than the silicon substrate. (2) Irradiation by laser of the surface layer to form a junction in the silicon substrate.

Method of manufacturing a solar cell

A solar cell and a method of manufacturing the same are disclosed. The solar cell has a semiconductor substrate having a major surface for receiving light, a p-n junction for photovoltatic generation therein and a thin alumina coating layer on the major surface of the semiconductor substrate. The alumina coating layer includes H radicals and OH radicals.

Growing community of inventors

Tokyo, Japan

Taketoshi Kato