Seiko Epson Corporation

Shinshu University

Taketomi Kamikawa

Takeo Kaneko

Tomoko Koyama

Atsushi Harada

Norio Oguchi

Tatsuya Shimoda

Setsuya Iwashita

Takafumi Noda

Eiji Natori

Kiyoshi Nakamura

Mitsuhiro Yamamura

Jun Takizawa

Musubu Ichikiwa

Masamitsu Inoue

A thermal detector includes a thermal detecting element and a support member supporting the thermal detecting element and a wiring layer. The support member has an arm member connected to a mounting member with the first arm member having an arm base end section extending outwardly from the mounting member toward a first direction, the arm base section having a first width measured along a direction perpendicular to the first direction, and an arm body section having a proximal end portion extending from the arm base end section generally along an outer contour of the mounting member with the proximal end portion being spaced apart from an edge of the mounting member in the first direction. The proximal end portion of the arm body section has a second width measured along a direction perpendicular to a lengthwise direction of the arm body section that is narrower than the first width.

Thermal detector, thermal detecting device, and electronic instrument

A thermal detector has a thermal detection element in which a physical characteristic changes based on temperature, a light-absorbing member configured and arranged to collect heat and transmit collected heat to the thermal detection element, a support member mounting the thermal detection element on a first side with a second surface facing a cavity, and a support part supporting a portion of the support member. The light-absorbing member is a plate shaped member at least partially contacting a top part of the thermal detection element and having a portion overhanging to an outside from the top part of the thermal detection element in plan view.

Thermal detector, thermal detection device, and electronic instrument

A semiconductor device includes a substrate, a transparent oxide layer disposed on one surface side of the substrate, a gate disposed apart from the transparent oxide layer, and a gate insulating layer disposed between the transparent oxide layer and the gate. The transparent oxide layer includes a source, a drain, and a channel formed integrally between the source and the drain, and is made of a transparent oxide material as the main material. The gate provides an electric field to the channel. The gate insulating layer insulates the source and the drain from the gate. The average thickness of the channel is smaller than the average thickness of the source and the drain so that the source and the drain function as conductors and the channel functions as a semiconductor.

Semiconductor device, method for manufacturing the same, electro-optical device and electronic apparatus

A transistor including a first gate electrode, a second gate electrode, a first gate insulating layer disposed between the first gate electrode and the second gate electrode, a first interlayer disposed between the first gate insulating layer and the second gate electrode and containing a first organic material, an organic semiconductor layer disposed between the first interlayer and the second gate electrode, a second gate insulating layer disposed between the organic semiconductor layer and the second gate electrode, and a source electrode and a drain electrode disposed between the first interlayer and the second gate insulating layer and injecting carriers into the organic semiconductor layer, wherein an ambipolar property is imparted to a part of the organic semiconductor layer that contacts with the first interlayer under an action of the first interlayer.

Transistor, transistor circuit, electrooptical device and electronic apparatus

A method of manufacturing directional coupler includes forming a first waveguide over a substrate, forming a separate section on respective ends of the first waveguide, and forming a second waveguide stacked over the first waveguide, wherein the first waveguide and the second waveguide are patterned by ink-jet process. The first waveguide and the second waveguide may be formed so as to overlap each other. The method may further include forming a projecting portion on the substrate, wherein the first waveguide being formed on the projection portion.

Method of manufacturing directional coupler

A light-emitting device includes a light-emitting layer capable of generating light by electroluminescence, a pair of electrodes applies an electric field to the light-emitting layer, and a substrate having a depression in a surface, and the light-emitting layer is disposed within the depression of the substrate.

Light-emitting device and electronic instrument

An organic semiconductor device of the present invention has an organic semiconductor layer disposed within a depression formed in a substrate; a drain electrode and a source electrode; and a gate electrode to face the organic semiconductor layer with a gate insulating layer interposed. Alternatively, an organic semiconductor device of the present invention has an insulating layer disposed on a substrate; an organic semiconductor layer disposed within a depression formed in the insulating layer; a drain electrode and a source electrode; and a gate electrode disposed to face the organic semiconductor layer with a gate insulating layer interposed.

Organic semiconductor device

This is an invention of a superconductive device that is equipped with a first superconductive electrode, a second superconductive electrode and a junction that is made of a superconductive material that connects these superconductive electrodes, wherein there are 2-terminal or 3-terminal superconductive devices that use a junction that is in a superconductive state that is weaker than the first and the second superconductive electrodes or in a normal conductive state that is near the superconductive state. The differences between the critical current, the critical temperature, the pair potential and the carrier densities of the first and the second superconductive electrodes and the junction are used as a means of putting the junction in the states mentioned above. Based on the methods mentioned above, a superconductive device which has few pattern rule restrictions and which is easy to fabricate can be offered. And in the case of the 3-terminal superconductive device, the switching characteristics can be improved.

Growing community of inventors

Shiojiri, Japan

Taketomi Kamikawa