Semiconductor Energy Laboratory Co., Ltd.

Taketomi Asami

Shunpei Yamazaki

Mitsuhiro Ichijo

Toru Mitsuki

Satoshi Toriumi

Yasuyuki Arai

Tamae Takano

Toru Takayama

Masahiko Hayakawa

Kenji Kasahara

Chiho Kokubo

Takeshi Shichi

Satoshi Murakami

Hidehito Kitakado

Takashi Ohtsuki

Hideto Ohnuma

Noriyoshi Suzuki

Hiroki Adachi

Hiroshi Shibata

Ritsuko Kawasaki

Naoya Sakamoto

Hisashi Ohtani

Junichi Koezuka

Koji Dairiki

Mitsunori Sakama

Masayuki Kajiwara

Noriko Ishimaru

Osamu Nakamura

Junichiro Sakata

Yoshiaki Oikawa

Masakazu Murakami

Etsuko Fujimoto

Masato Yonezawa

Koji Moriya

Yoko Kanakubo

Kunihiko Fukuchi

Osama Nakamura

In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

Luminescent device having light-emitting element and transistor

Luminescent device having light emitting element and transistor

The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.

Methods of removing contaminant impurities during the manufacture of a thin film transistor by applying water in which ozone is dissolved

Luminescent device and process of manufacturing the same

At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.

Method of manufacturing a semiconductor device

Manufacturing method for semiconductor device

According to the invention, an insulating or semi-insulating barrier layer which has a thickness where a tunnel current can flow through is provided between a hole injection electrode and an organic compound layer with hole transport characteristics (a hole injection layer or a hole transport layer). Specifically, a thin insulating or semi-insulating barrier layer which contains silicon or silicon oxide; silicon or silicon oxide and a light transmitting conductive oxide material; or silicon or silicon oxide, a light transmitting conductive oxide material, and carbon may be provided between a light transmitting conductive oxide film formed of a light transmitting conductive oxide material, such as ITO and a hole injection layer containing an organic compound.

Light emitting element and manufacturing method thereof

Channel doping is an effective method for controlling V, but if Vshifts to the order of &#x2212;4 to &#x2212;3 V when forming circuits such as a CMOS circuit formed from both an n-channel TFT and a P-channel TFT on the same substrate, then it is difficult to control the Vof both TFTs with one channel dope. In order to solve the above problem, the present invention forms a blocking layer on the back channel side, which is a laminate of a silicon oxynitride film (A) manufactured from SiH, NH, and NO, and a silicon oxynitride film (B) manufactured from SiHand NO. By making this silicon oxynitride film laminate structure, contamination by alkaline metallic elements from the substrate can be prevented, and influence by stresses, caused by internal stress, imparted to the TFT can be relieved.

Semiconductor device and manufacturing method thereof

A hydrogenation method that utilizes plasma directly exposes a crystalline semiconductor film to the plasma, and therefore involves the problem that the crystalline semiconductor film is damaged by the ions generated simultaneously in the plasma. If a substrate is heated to 400&#xb0; C. or above to recover this damage, hydrogen is re-emitted from the crystalline semiconductor film. To solve these problems, a method of fabricating a semiconductor device according to the present invention comprises the steps of forming a hydrogen-containing first insulating film on a semiconductor layer formed into a 'predetermined shape, conducting heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation, forming a second insulating film in contact with the first insulating film, conducting heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation, forming a hydrogen-containing third insulating film on the second insulating film and conducting heat-treatment in an atmosphere containing hydrogen or nitrogen.

Semiconductor device and fabrication method thereof

An object is to reduce the number of high temperature (equal to or greater than 600&#xb0; C.) heat treatment process steps and achieve lower temperature (equal to or less than 600&#xb0; C.) processes, and to simplify the process steps and increase throughput in a method of manufacturing a semiconductor device. With the present invention, a barrier layer, a second semiconductor film, and a third semiconductor film containing a noble (rare) gas element are formed on a first semiconductor film having a crystalline structure. Gettering is performed and a metallic element contained in the first semiconductor film passes through the barrier layer and the second semiconductor film by a heat treatment process, and moves to the third semiconductor film. The second semiconductor film and the third semiconductor film are then removed, with the barrier layer used as an etching stopper.

Growing community of inventors

Kanagawa, Japan

Taketomi Asami