Mitsubishi Gas Chemical Company, Inc.

Other

Sharp Kabushiki Kaisha Corporation

Ihi Rotating Machinery Engineering Co., Ltd.

Taketo Maruyama

Tetsuo Aoyama

Hisaki Abe

Masahiro Nohara

Tetsuya Karita

Yukihiko Takeuchi

Takashi Suzuki

Kazuto Ikemoto

Taimi Oketani

Akinori Tanaka

Kojiro Abe

Mitsunori Oda

Masakazu Furushima

Satoshi Okabe

Tomoyuki Adaniya

Takashi Oritani

Ryou Hashimoto

Keiichi Tanaka

Yoshiaki Yamamoto

Hideki Fukuda

Hiroshi Yoshida

Tetsunori Tanaka

Wataru Nakamura

Masayuki Kubota

Yutaka Hirata

Kazuki Kobayashi

Kenichi Kitoh

Ryuji Hasemi

Shigeo Yoshinaka

Hijiri Nakahara

Ryuji Sotoaka

Takayuki Niuya

Masahide Matsubara

Kazuyo Narita

Hideto Gotoh

Hidetoshi Ikeda

Toshio Kajita

Ken Nakano

Tsuyoshi Matsui

Yukihiro Maeda

Fukusaburou Ishihara

Toshiyuki Gotou

Yoshio Shimokura

Toshifumi Kitanobo

Hisayuki Motoi

Yoshinori Sasaki

Yoshiaki Suzuki

Naomichi Oomori

Kazumasa Miyahara

A support apparatus for balance correction of a rotated body having an end face in a direction intersecting a rotation center and having a support hole in a rotation center portion of the end face includes a vertical mandrel inserted into the rotated body from a vertical direction by being fitted in the support hole; a fluid radial bearing provided on an outer circumferential surface of the mandrel and adapted to rotatably receive an inner surface of the support hole by means of a fluid ejected from the outer circumferential surface of the mandrel; and a fluid thrust bearing placed around the mandrel and adapted to eject the fluid to an end face of the rotated body and thereby float the rotated body.

Support apparatus for balance correction

The present invention relates to an etching solution being capable of selectively etching a copper/molybdenum-based multilayer thin film with respect to a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film, wherein the etching solution comprises (A) hydrogen peroxide, (B) an inorganic acid containing no fluorine atom, (C) an organic acid, (D) an amine compound having 2 to 10 carbon atoms, and having an amino group and at least one group selected from an amino group and a hydroxyl group, (E) an azole, and (F) a hydrogen peroxide stabilizer, and has a pH of 2.5 to 5, as well as an etching method using the etching solution for selectively etching a copper/molybdenum-based multilayer thin film from a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film.

Etching solution for copper/molybdenum-based multilayer thin film

The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.

Etching liquid for a copper/titanium multilayer thin film

An etching composition which comprises at least one organic carboxylic acid compound selected from acetic acid, propionic acid, butyric acid, succinic acid, citric acid, lactic acid, malic acid, tartaric acid, malonic acid, maleic acid, glutaric acid, aconitic acid, 1,2,3-propanetricarboxylic acid and ammonium salts of these acids, a polysulfonic acid compound and water, and an etching process which comprises etching a conductive film comprising zinc oxide as the main component using the etching composition described above.

Etching composition and etching process

The photoresist stripping composition of the present invention contains at least one oxymethylamine compound represented by the following formula 1: wherein Rto Rare as defined in the specification. Of the oxymethylamine compound of the formula 1, the compound represented by the following formula 7: wherein Rto Rand n are as defined in the specification, is a novel compound.

Photoresist stripping composition and cleaning composition

Photoresist stripping composition and process for stripping resist

A cleaning agent which comprises 0.1 to 60% by weight of an oxidizing agent and 0.0001 to 5% by weight of a chelating agent. In the process for producing semiconductor integrated circuits, a pattern layer of a photoresist used as an etching mask and residues formed from the photoresist by dry etching can be easily removed with the cleaning agent. In the process for producing substrates for liquid crystal display panels, residues derived from a conductive thin film formed by dry etching can also be easily removed. In the cleaning processes using the cleaning agent, wiring materials or insulating materials in thin film circuit devices or other materials used for producing substrates of semiconductor integrated circuits and liquid crystal panels are not corroded.

Cleaning agent and cleaning process using the same

Resist stripping agent and process of producing semiconductor devices using the same

A resist film removing composition used in the manufacture of a thin film circuit element having an organic insulation film which comprises 50 to 70% by weight of an alkanolamine having 3 or more carbon atoms, 20 to 30% by weight of a water-miscible solvent and 10 to 20% by weight of water. The resist film removing composition can easily remove a resist film remaining after etching, without swelling the organic insulation film.

Resist film removing composition and method for manufacturing thin film circuit element using the composition

A photoresist stripping composition comprises (1) a nitrogen-containing organohydroxyl compound, (2) an alkylene glycol monoalkyl ether represented by the general formula: HO&mdash;(C H O) &mdash;R, wherein R is C -C alkyl, p is 2 or 3, and q is 1, 2 or 3, (3) sugar or sugar alcohol, (4) a phosphorus-containing compound and (5) water. The photoresist stripping composition easily removes photoresist films on the inorganic substrate, and patterned photoresist films and photoresist residues remaining after etching and photoresist residues in a short period of time without corroding semiconductive materials, circuit-forming materials, insulating materials, etc.

Photoresist stripping composition and process for stripping photoresist

A resist removing composition comprising a quaternary ammonium hydroxide, a water-soluble amine, an alkylpyrrolidone and a sugar or sugar alcohol. The photoresist removing composition can easily remove (i) a photoresist layer applied onto an inorganic substrate, (ii) a remaining photoresist layer after dry etching or (iii) a photoresist residue after ashing, at a low temperature in a short time, and also enables hyperfine processing of a wiring pattern material to manufacture a high precision circuit pattern without corroding the material.

Photoresist removing composition

An aqueous resist stripping composition contains (a) an oxidizing agent, (b) a chelating agent, (c) a water-soluble fluorine compound, and optionally (d) an organic solvent. Also provided is a process of stripping resist films and resist residues remaining after etching treatment utilizing the aqueous resist stripping composition. In the process, corrosion of semiconductor materials, circuit-forming materials, insulating films, etc. is minimized and the rinsing is sufficiently made with only water without needing organic solvent such as alcohol.

Resist stripping composition and process for stripping resist

A cleaning agent for use in producing semiconductor devices. The cleaning agent is an aqueous solution containing (A) a fluorine-containing compound, (B) a salt of boric acid, (C) a water-soluble organic solvent, and optionally, (D) a specific quaternary ammonium salt or (D&prime;) a specific ammonium salt of an organic carboxylic acid or a specific amine salt of an organic carboxylic acid. The polymeric deposit inside and around the via holes and on the side wall of the conductive line pattern formed during the dry etching process can be effectively removed by using the cleaning agent without affecting the dimensions of the via holes and the conductive line pattern.

Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the same

A cleaning liquid for semiconductor devices comprising 1.0 to 5% by weight of a fluorine compound of the formula R.sub.4 NF, wherein R is a hydrogen atom or a C.sub.1 -C.sub.4 alkyl group, 72 to 80% by weight of an organic solvent soluble in water, and the remaining amount being water. The cleaning liquid can rapidly and completely at a low temperature remove resist residues left remaining after dry etching and ashing in the wiring step in the production of semiconductor integrated circuits, and the cleaning liquid does not corrode wiring materials.

Cleaning liquid for semiconductor devices

Disclosed are novel adenine derivatives represented by the formula I and agriculturally acceptable acid addition salts thereof represented by the formula: ##STR1## wherein n is an integer of 2-4. Compositions for increasing yield of crops such as leguminous crops and gramineous crops which contain the above adenine derivatives or salts thereof as an active ingredient and methods for increasing yield of crops using these compositions are also disclosed.

Adenine derivatives and their use as agents for increasing yield of crops

Growing community of inventors

Niigata-ken, Japan

Taketo Maruyama