Seiko Epson Corporation

Takeshi Yuzawa

Masatoshi Tagaki

Hideki Yuzawa

Michiyoshi Takano

Fumiaki Karasawa

A semiconductor device includes a semiconductor chip, wiring that is included in the semiconductor chip and his a coupling part between parts with different widths, a pad being formed above the wiring and in a position overlapping the coupling part, a bump being formed on the pad, a buffer layer being formed in a position between the coupling part and the pad so as to cover the entire couple part, and inorganic insulating layers being formed between the wiring and the buffer layer and between the buffer layer and the pad, respectively. The buffer layer is made of a material other than resin and softer than the inorganic insulating layer.

Semiconductor device including a buffer layer structure for reducing stress

A semiconductor device includes a semiconductor chip, wiring that is included in the semiconductor chip and has a coupling part between parts with different widths, a pad being formed above the wiring and in a position overlapping the coupling part, a bump being formed on the pad, a buffer layer being formed in a position between the coupling part and the pad so as to cover the entire couple part, and inorganic insulating layers being formed between the wiring and the buffer layer and between the buffer layer and the pad, respectively. The buffer layer is made of a material other than resin and softer than the inorganic insulating layer.

Semiconductor device including semiconductor chip, wiring, conductive material, and contact part

A semiconductor device includes a semiconductor chip, wiring that is included in the semiconductor chip and has a coupling part between parts with different widths, a pad being formed above the wiring and in a position overlapping the coupling part, a bump being formed on the pad, a buffer layer being formed in a position between the coupling part and the pad so as to cover the entire coupling part, and inorganic insulating layers being formed between the wiring and the buffer layer and between the buffer layer and the pad, respectively. The buffer layer is made of a material other than resin and softer than the inorganic insulating layer.

A semiconductor device, including: a semiconductor layer; a first conductive layer formed above the semiconductor layer and having a first width; a second conductive layer connected to the first conductive layer and having a second width which is smaller than the first width; an interlayer dielectric formed above the first conductive layer and the second conductive layer; and an electrode pad formed above the interlayer dielectric. A connection section at which the first conductive layer and the second conductive layer are connected is disposed in a specific region positioned inward from a line extending vertically downward from an edge of the electrode pad; and a reinforcing section is provided at the connection section.

Semiconductor device having a conductive layer reliably formed under an electrode pad

A semiconductor device, including: a semiconductor layer having an active region; a first conductive layer formed above the semiconductor layer and having a first width; a second conductive layer connected to the first conductive layer and having a second width smaller than the first width; an interlayer dielectric formed above the semiconductor layer; an electrode pad formed above the interlayer dielectric and covering the active region when viewed from a top side; and a forbidden region provided in the semiconductor layer in a specific range positioned outward from a line extending vertically downward from an edge of at least part of the electrode pad. A connection section at which the first conductive layer and the second conductive layer are connected is not provided in the forbidden region.

Semiconductor device

A semiconductor device including a semiconductor substrate containing a plurality of electrode pads and a passivation film with an opening that exposes a central area of each of the electrode pads, and a bump electrically connected to each of the electrode pads, the bump being disposed to overlap the opening and an end of the opening, wherein at least part of an area contacting the bump on a surface of the passivation film is an uneven surface.

Semiconductor device and manufacturing method thereof

A semiconductor device including: a semiconductor section in which an element is formed; an insulating layer formed on the semiconductor section; an electrode pad formed on the insulating layer; a contact section formed of a conductive material provided in a contact hole in the insulating layer and electrically connected with the electrode pad; a passivation film formed to have an opening on a first section of the electrode pad and to be positioned on a second section of the electrode pad; a bump formed to be larger than the opening in the passivation film and to be partially positioned on the passivation film; and a barrier layer which lies between the electrode pad and the bump. The contact section is connected with the second section at a position within a range in which the contact section overlaps the bump while avoiding the first section of the electrode pad.

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Chino, Japan

Takeshi Yuzawa