Idemitsu Kosan Company, Limited

Kyusyu University Corporation

Murata Manufacturing Co., Ltd.

Takeshi Yasuda

Tetsuo Tsutsui

Hiroaki Nakamura

Masatoshi Saitou

Tomoaki Onoue

A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by CH&#x2014;CH&#x2550;CH&#x2014;CH, or a distyryl structure expressed by CH&#x2014;CH&#x2550;CH&#x2014;CH&#x2014;CH&#x2550;CH&#x2014;CHeach without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.

Organic thin film transistor

A field-effect transistor is provided, which includes an organic thin film and which can realize a low threshold voltage while a stable, high field-effect mobility is ensured at the same time. In a field-effect transistor provided with a gate electrode, a source electrode, a drain electrode, a semiconductor film, a gate insulating film, and a substrate, the gate insulating film is formed from a plurality of insulating layers. Here, a first insulating layer in contact with the semiconductor film is formed from poly-p-xylylene formed into a film by a CVD method. A second insulating layer is formed from, for example, cyanoethylpullulan, and the dielectric constant is specified to be higher than that of the first insulating layer.

Field-effect transistor

Growing community of inventors

Kasuga, Japan

Takeshi Yasuda